Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures
Open accessAbstract
Temperature and gate voltage dependences of the channel electron mobility were studied in short-channel high-voltage vertical double implanted 4H-SiC MOSFETs (VDMOSFETs). With increasing gate voltage, field effect electron mobility, μ FE , increased, tending to saturate at large V g values reaching a maximum of ∼4 cm 2 V −1 s −1 at room temperature. With the temperature increase, μ FE increased monotonically and reached a value of ∼16 cm 2 V −1 s −1 at 510 K. These trends are explained by the high density of the interface traps, which was extracted from the temperature dependence of the threshold voltage. The electron mobility in the drift region decreased with temperature increase. As a result, the contribution of the drift region to the on-resistance was dominant at elevated temperatures limiting the VDMOSFETs performance at temperatures above ∼420 K. The on-resistance of VDMOSFETs was only weakly dependent on temperature within the temperature range from 300 K to 510 K.
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The on-resistance relation with junction temperature is not perfectly linear in SiC MOSFETs.
“However, the on-resistance relation with junction temperature is not perfectly linear in SiC MOSFETs.”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [98]
Channel mobility increases over temperature and channel resistance shows a negative temperature coefficient.
“It is partially because the channel mobility increases over temperature and the channel resistance shows a negative temperature coefficient [98].”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [98]
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“It is partially because the channel mobility increases over temperature and the channel resistance shows a negative temperature coef-ficient [98].”
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- Authors
- Rumyantsev, S. L., Shur, M. S., Levinshtein, M. E., Ivanov, P. A., Palmour, J. W., Agarwal, A. K., Hull, B. A., & Ryu, S.-H.
- Affiliations
- Russian Academy of Sciences (RU)
- Rensselaer Polytechnic Institute (US)
- Wolfspeed, Inc. (United States) (US)
- Venue
- Semiconductor Science and Technology
- Publisher
- IOP Publishing
- Published
- 2009-06-02
- Volume
- 24
- Issue
- 7
- Pages
- 075011
- ISSN
- 0268-1242 (ISSN-L)
- 1361-6641
- OpenAlex
- W2091201956
- Cited by
- 66
- References
- 27
- Citations by year
- 2026: 3 · 2025: 7 · 2024: 6 · 2023: 6 · 2022: 2 · 2021: 3 · 2020: 6 · 2019: 8 · 2018: 7 · 2017: 5 · 2016: 1 · 2015: 2 · 2014: 1 · 2013: 4 · 2012: 3
- FWCI
- 1.32
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Locations
- Semiconductor Science and Technology (publishedVersion)
- Funders
- National Science Foundation
- Russian Foundation for Basic Research
- Ioffe Institute
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
- Keywords
- 4H-SiC MOSFET, field-effect mobility, on-resistance, temperature dependence, gate voltage dependence, interface states, threshold voltage, high-voltage power devices
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