Matioli, Elison

GaN-based power devices: Physics, reliability, and perspectives

Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 723

Efficient Microchannel Cooling of Multiple Power Devices with Compact Flow Distribution for High Power-Density Converters

van Erp, R., Kampitsis, G., & Matioli, E. (2020) · IEEE Transactions on Power Electronics

Heat Transfer and OptimizationAdvanced DC-DC Converters

Cited by 97

Comparison of Wide-Band-Gap Technologies for Soft-Switching Losses at High Frequencies

Jafari, A., Nikoo, M. S., Perera, N., Yildirim, H. K., Karakaya, F., Soleimanzadeh, R., & Matioli, E. (2020) · IEEE Transactions on Power Electronics

Silicon Carbide Semiconductor TechnologiesAdvanced DC-DC Converters

Cited by 92

Embedded Microchannel Cooling for High Power-Density GaN-on-Si Power Integrated Circuits

Erp, R. V., Kampitsis, G., Nela, L., Ardebili, R. S., & Matioli, E. (2020) · 2020 19th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 33

Switching losses in power devices: From dynamic on resistance to output capacitance hysteresis

Matioli, E., Zhu, H., Perera, N., Nikoo, M. S., Jafari, A., & van Erp, R. (2023) · 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)

Silicon Carbide Semiconductor TechnologiesGaN-based semiconductor devices and materials

Cited by 6