The DOI matches its Crossref record; 28 of the 28 references it cites were found in a registry or an index.
Embedded Microchannel Cooling for High Power-Density GaN-on-Si Power Integrated Circuits
Open accessAbstract
In this work, we demonstrate a new thermal management approach for direct cooling of GaN-on-Si power integrated circuits (ICs), in which the Si substrate functions as a microfluidic heat sink, turning Si into a cost-effective, high thermal performance substrate. Flowing coolant through microchannels etched in the backside of the substrate enables a much denser integration of GaN power devices in a single chip. As a proof of concept, an integrated full-wave bridge rectifier (FWBR) was realized based on high-performance tri-anode GaN Schottky barrier diodes (SBDs), together with a novel hybrid printed circuit board (PCB) that provides fluidic and electric connections to the liquid-cooled power IC. A device-level heat flux of 417 W/cm2was cooled using only 60 mW of pumping power. Compared to natural-convection air-cooling, the temperature rise was reduced by 98% and the converter output power was increased by 30 times, up to 120 W, by eliminating self-heating degradation. The high cooling efficiency, large heat extraction capabilities and low-cost fabrication process of embedded microchannels on GaN-on-Si, in combination with new PCB-based coolant delivery, can be an enabling technology for the next generation of ultra-high power-density ICs.
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Embedded microchannels have demonstrated up to a 43% reduction in thermal resistance while mitigating self-heating and thermal coupling in dense power modules.
“Microchannel cooling routes coolant through tens to hundreds of µ mchannels etched in or beneath the substrate; embedded microchannels further shorten the conduction path and have demonstrated up to a 43% [29] reduction in thermal resistance while mitigating self-heating and thermal coupling in dense power modules [55-58].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [56]
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Research works printed but not linked: 1
- phillips, 1988, Michrochannel Heat Sinks, Lincoln Lab J (ISSN 0896-4130), 1, 31
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Sorted by citations
Han, G., Kim, J., Park, S., & Bae, W. (2025) · Electronics · doi:10.3390/electronics14214193 · Cited by 34
Metadata
- Authors
- Erp, R. V., Kampitsis, G., Nela, L., Ardebili, R. S., & Matioli, E.
- Affiliations
- École Polytechnique Fédérale de Lausanne (CH)
- Venue
- 2020 19th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)
- Publisher
- IEEE
- Published
- 2020-07
- Pages
- 53-59
- ISSN
- 1087-9870 (ISSN-L)
- OpenAlex
- W3085209619
- Cited by
- 33
- References
- 28
- Citations by year
- 2026: 3 · 2025: 4 · 2024: 14 · 2023: 6 · 2022: 2 · 2021: 3 · 2020: 1
- FWCI
- 6.78
- Type
- conference paper
- Language
- en
- Open access
- green
- infoscience.epfl.ch
- Licence
- Locations
- I-THERM :/I-THERM - Intersociety Conference on Thermal Phenomena in Electronic Systems (publishedVersion)
- Infoscience (Ecole Polytechnique Fédérale de Lausanne) (submittedVersion, cc-by-nc-nd)
- Funders
- National Science Foundation
- European Commission (H2020)
- Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung (166901)
- Horizon 2020 Framework Programme
- H2020 European Research Council (679425)
- Topics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Mechanical Engineering › Heat Transfer and Optimization
- Keywords
- GaN-on-Si, microchannel cooling, liquid cooling, thermal management, power integrated circuits, diode bridge rectifier, Schottky diodes, high power density, silicon substrate
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