Sitch, P. K.

University of Exeter

1 paper on CoChatORCID 0009-0007-0367-6814

Most cited papers

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Abinitio investigation of the dislocation structure and activation energy for dislocation motion in silicon carbide
Sitch, P. K., Jones, R., Öberg, S., & Heggie, M. I. (1995) · Physical Review B
Silicon Carbide Semiconductor TechnologiesMicrostructure and mechanical properties
Cited by 46

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