The DOI matches its Crossref record; 13 of the 13 references it cites were found in a registry or an index.
Abinitio investigation of the dislocation structure and activation energy for dislocation motion in silicon carbide
Abstract
The structures of straight 90\ifmmode^\circ\else\textdegree\fi{} glide partial dislocations in SiC are calculated using an ab initio local density functional cluster method. Si partials containing core Si atoms are found to be strongly reconstructed with a Si-Si bond of comparable length to that in bulk silicon. The C partial possessing core C atoms is more weakly reconstructed with a bond length 16% longer than that in bulk diamond. The formation and migration energies of kinks on the partials are calculated and indicate that the C partial is the more mobile. The calculations also predict that n-type doping leads to an increase in the mobility of C partials whereas p-type doping increases the mobility of Si partials.
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Rosalind Franklin Rover is an autonomous six-wheeled vehicle designed to travel over the Martian terrain at a speed of 70 meters per sol and to operate for at least seven months and travel 4 km after landing.
“Rosalind Franklin Rover is an autonomous six-wheeled vehicle designed to travel over the Martian terrain at a speed of 70 meters per sol (Martian day) to achieve its scientific objectives. Rosalind Franklin Rover was designed to operate for at least seven months and to travel 4 km after landing.”
From Energy system and resource utilization in space: A state-of-the-art review (2024) · cites this paper as [200]
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Cites
Pseudopotentials that work: From H to Pu
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Theory of Dislocations (2nd ed.)
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Defects in plastically deformed 6H SiC single crystals studied by transmission electron microscopy
Maeda, K., Suzuki, K., Fujita, S., Ichihara, M., & Hyodo, S. (1988) · Philosophical Magazine A · doi:10.1080/01418618808214408 · Cited by 165
First-principles calculations of the energy barrier to dislocation motion in Si and GaAs
Öberg, S., Sitch, P., Jones, R., et al. (1995) · Physical review. B, Condensed matter · doi:10.1103/physrevb.51.13138 · Cited by 64
Self-citationHull, R. V., & Bean, J. C. (1993) · physica status solidi (a) · doi:10.1002/pssa.2211380222 · Cited by 52
Ab initio cluster calculations of defects in solids
Jones, R. (1992) · Philosophical Transactions of the Royal Society of London Series A Physical and Engineering Sciences · doi:10.1098/rsta.1992.0107 · Cited by 48
Self-citationDislocation glide motion in heteroepitaxial thin films of Si1−xGex/Si(100)
Yamashita, Y., Maeda, K., Fujita, K., et al. (1993) · Philosophical Magazine Letters · doi:10.1080/09500839308240925 · Cited by 47
Ab initio total energy calculations of impurity pinning in silicon
Heggie, M. I., Jones, R., & Umerski, A. (1993) · physica status solidi (a) · doi:10.1002/pssa.2211380204 · Cited by 40
Self-citationThe interaction of oxygen with dislocation cores in silicon
Umerski, A., & Jones, R. (1993) · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · doi:10.1080/01418619308213967 · Cited by 38
Self-citationFirst-Principles Calculations of Dislocations in Semiconductors
Jones, R., Umerski, A., Sitch, P., et al. (1993) · physica status solidi (a) · doi:10.1002/pssa.2211370211 · Cited by 33
Self-citationStructures of dislocations in GaAs and their modification by impurities
Sitch, P., Jones, R., Öberg, S., et al. (1994) · Physical review. B, Condensed matter · doi:10.1103/physrevb.50.17717 · Cited by 30
Self-citationRECOMBINATION ENHANCED MOBILITY OF DISLOCATIONS IN III-V COMPOUNDS
Maeda, K., & Takeuchi, S. (1983) · Le Journal de Physique Colloques · doi:10.1051/jphyscol:1983445 · Cited by 30
Gallium Arsenide and Related Compounds 1985
Ftjjimoto, M. (1987) · De Gruyter eBooks · doi:10.1515/9783112485569-005 · Cited by 19
Flagged first, then by citations
Research works printed but not linked: 3
- J. A. Powell, 1989, Amorphous and Crystalline Silicon Carbide
- P. Pirouz, 1994, Solid State Phenom., 35, 183
- A. M. Gomez, 1978, Philos. Mag., 24, 1383
Cited by
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Dislocation Cores and Hardness Polarity of 4H‐SiC
Ning, X., Huvey, N., & Pirouz, P. (1997) · Journal of the American Ceramic Society · doi:10.1111/j.1151-2916.1997.tb03033.x · Cited by 60
Energy system and resource utilization in space: A state-of-the-art review
Wu, W., Shen, J., Kong, H., Yang, Y., Ren, E., Liu, Z., Wang, W., Dong, M., Han, L., Yang, C., et al. (2024) · The Innovation Energy · doi:10.59717/j.xinn-energy.2024.100029 · Cited by 44
Metadata
- Authors
- Sitch, P. K., Jones, R., Öberg, S., & Heggie, M. I.
- Affiliations
- University of Exeter (GB)
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 1995-08-15
- Volume
- 52
- Issue
- 7
- Pages
- 4951-4955
- ISSN
- 0163-1829 (ISSN-L)
- 1095-3795
- OpenAlex
- W2043796412
- Cited by
- 46
- References
- 13
- Citations by year
- 2025: 1 · 2024: 1 · 2023: 2 · 2022: 1 · 2021: 1 · 2016: 1 · 2015: 4 · 2014: 1 · 2013: 1 · 2012: 2
- FWCI
- 1.92
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Physical review. B, Condensed matter (publishedVersion)
- PubMed (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Materials Science › Metals and Alloys › Microstructure and mechanical properties
- Physical Sciences › Materials Science › Materials Chemistry › Fusion materials and technologies
- Keywords
- silicon carbide, partial dislocations, dislocation structure, dislocation kinks, kink formation energy, dislocation motion, n-type doping, p-type doping, dislocation core reconstruction, Si–Si bond lengths
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