Kim, Y.H.
Samsung (South Korea) · Samsung Electronics (South Korea)
2 papers on CoChatORCID 0009-0002-5005-6742
Most cited papers
- Verified
3nm GAA Technology featuring Multi-Bridge-Channel FET for Low Power and High Performance Applications
Bae, G., Bae, D.-I., Kang, M., Hwang, S. M., Kim, S. S., Seo, B., Kwon, T. Y., Lee, T. J., Moon, C., Choi, Y. M., et al. (2018) · 2018 IEEE International Electron Devices Meeting (IEDM)
Advancements in Semiconductor Devices and Circuit DesignLow-power high-performance VLSI design
Cited by 368
- Verified
Stack friendly all-oxide 3D RRAM using GaInZnO peripheral TFT realized over glass substrates
Lee, M.-J., Lee, C. B., Kim, S., Yin, H., Park, J., Ahn, S. E., Kang, B. S., Kim, K. H., Stefanovich, G., Song, I., et al. (2008) · 2008 IEEE International Electron Devices Meeting
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 36
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