Moens, P.

Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs

Stockman, A., Canato, E., Meneghini, M., Meneghesso, G., Moens, P., & Bakeroot, B. (2019) · 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 66

Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs

Stockman, A., Canato, E., Meneghini, M., Meneghesso, G., Moens, P., & Bakeroot, B. (2021) · IEEE Transactions on Device and Materials Reliability

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 54

A Charge-to-Breakdown (QBD) Approach to SiC Gate Oxide Lifetime Extraction and Modeling

Moens, P., Franchi, J., Lettens, J., Schepper, L. D., Domeij, M., & Allerstam, F. (2020) · 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devices

Cited by 38

Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling

Masin, F., De Santi, C., Lettens, J., Franchi, J., Domeij, M., Moens, P., Meneghini, M., Meneghesso, G., & Zanoni, E. (2021) · Journal of Applied Physics

Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devices

Cited by 29

$\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate

Canato, E., Masin, F., Borga, M., Zanoni, E., Meneghini, M., Meneghesso, G., Stockman, A., Banerjee, A., & Moens, P. (2019) · 2019 IEEE International Reliability Physics Symposium (IRPS)

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 24

Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors

Tajalli, A., Canato, E., Nardo, A., Meneghini, M., Stockman, A., Moens, P., Zanoni, E., & Meneghesso, G. (2019) · 2019 IEEE International Reliability Physics Symposium (IRPS)

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 5

The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study

Moens, P., Geenen, F., De Schepper, L., Cano, J., Lettens, J., Maslougkas, S., Franchi, J., & Domeij, M. (2023) · 2023 IEEE International Reliability Physics Symposium (IRPS)

Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devices

Cited by 4