Lv, Hangbing

Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM

Liu, Q., Sun, J., Lv, H., Long, S., Yin, K., Wan, N., Li, Y., Sun, L., & Liu, M. (2012) · Advanced Materials

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 588

Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

Zhang, Y., Mao, G.-Q., Zhao, X., Li, Y., Zhang, M., Wu, Z., Wu, W., Sun, H., Guo, Y., Wang, L., et al. (2021) · Nature Communications

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 300

Robust True Random Number Generator using Stochastic Short-Term Recovery of Charge Trapping FinFET for Advanced Hardware Security

Yang, J., Ding, Q., Gong, T., Luo, Q., Xue, X., Gao, Z., Yu, H., Yu, J., Xu, X., Yuan, P., et al. (2020) · 2020 IEEE Symposium on VLSI Technology

Physical Unclonable Functions (PUFs) and Hardware SecurityCryptographic Implementations and Security

Cited by 9