The DOI matches its Crossref record; 69 of the 69 references it cites were found in a registry or an index.
A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics
Abstract
Thin dielectric films are essential components of most micro‐ and nanoelectronic devices, and they have played a key role in the huge development that the semiconductor industry has experienced during the last 50 years. Guaranteeing the reliability of thin dielectric films has become more challenging, in light of strong demand from the market for improved performance in electronic devices. The degradation and breakdown of thin dielectrics under normal device operation has an enormous technological importance and thus it is widely investigated in traditional dielectrics (e.g., SiO 2, HfO 2, and Al 2 O 3), and it should be further investigated in novel dielectric materials that might be used in future devices (e.g., layered dielectrics). Understanding not only the physical phenomena behind dielectric breakdown but also its statistics is crucial to ensure the reliability of modern and future electronic devices, and it can also be cleverly used for other applications, such as the fabrication of new‐concept resistive switching devices (e.g., nonvolatile memories and electronic synapses). Here, the fundamentals of the dielectric breakdown phenomenon in traditional and future thin dielectrics are revised. The physical phenomena that trigger the onset, structural damage, breakdown statistics, device reliability, technological implications, and perspectives are described.
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Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., & Kis, A. (2011) · Nature Nanotechnology · doi:10.1038/nnano.2010.279 · Cited by 14,939
Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
A Statistical Distribution Function of Wide Applicability
Weibull, W. (1951) · Journal of Applied Mechanics · doi:10.1115/1.4010337 · Cited by 11,604
Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
Ferrari, A. C., Bonaccorso, F., Fal'ko, V., Novoselov, K. S., Roche, S., Bøggild, P., Borini, S., Koppens, F. H. L., Palermo, V., Pugno, N., et al. (2015) · Nanoscale · doi:10.1039/c4nr01600a · Cited by 3,027
Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers
Song, L., Ci, L., Lu, H., Sorokin, P. B., Jin, C., Ni, J., Kvashnin, A. G., Kvashnin, D. G., Lou, J., Yakobson, B. I., et al. (2010) · Nano Letters · doi:10.1021/nl1022139 · Cited by 2,689
Georgiou, T., Jalil, R., Belle, B. D., Britnell, L., Gorbachev, R. V., Morozov, S. V., Kim, Y.-J., Gholinia, A., Haigh, S. J., Makarovsky, O., et al. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.224 · Cited by 1,751
Integrated Circuits Based on Bilayer MoS2 Transistors
Wang, H., Yu, L., Lee, Y.-H., Shi, Y., Hsu, A., Chin, M. L., Li, L.-J., Dubey, M., Kong, J., & Palacios, T. (2012) · Nano Letters · doi:10.1021/nl302015v · Cited by 1,738
Nanometre-scale electronics with III–V compound semiconductors
del Alamo, J. A. (2011) · Nature · doi:10.1038/nature10677 · Cited by 1,678
MoS2 and WS2 Analogues of Graphene
Ramakrishna Matte, H. S. S., Gomathi, A., Manna, A. K., Late, D. J., Datta, R., Pati, S. K., & Rao, C. N. R. (2010) · Angewandte Chemie International Edition · doi:10.1002/anie.201000009 · Cited by 1,675
Giovannetti, G., Khomyakov, P. A., Brocks, G., Kelly, P. J., & van den Brink, J. (2007) · Physical Review B · doi:10.1103/physrevb.76.073103 · Cited by 1,529
Cited by
Yoon, J. H., Song, Y.-W., Ham, W., Park, J.-M., & Kwon, J.-Y. (2023) · APL Materials · doi:10.1063/5.0149393 · Cited by 74
Metadata
- Authors
- Palumbo, F., Wen, C., Lombardo, S., Pazos, S., Aguirre, F., Eizenberg, M., Hui, F., & Lanza, M.
- Venue
- Advanced Functional Materials
- Publisher
- Wiley
- Published
- 2019-04-30
- Volume
- 30
- Issue
- 18
- ISSN
- 1616-301X (ISSN-L)
- 1616-3028
- OpenAlex
- W2943642246
- Cited by
- 268
- References
- 69
- FWCI
- 7.40
- Type
- journal article
- Language
- en
- Open access
- closed
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- Palumbo, F., Wen, C., Lombardo, S., Pazos, S., Aguirre, F., Eizenberg, M., Hui, F., & Lanza, M. (2020). A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics. Advanced Functional Materials. https://doi.org/10.1002/adfm.201900657
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