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All‐Organic Permanent Memory Transistor Using an Amorphous, Spin‐Cast Ferroelectric‐like Gate Insulator
Abstract
An all‐organic memory transistor (“FerrOFET”) with a solution‐ deposited ferroelectric‐like nylon gate insulator is demonstrated. Cheaper and easier to build than inorganic ferroelectric transistors, yet with comparable performance and compatible with flexible substrates, this device is suitable for most information storage organic electronics applications. The Figure shows the memory function of the FerrOFET as hysteresis in the transfer characteristics.
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Cited by
Ferroelectric thin films: Review of materials, properties, and applications
Setter, N., Damjanovic, D., Eng, L., Fox, G., Gevorgian, S., Hong, S., Kingon, A., Kohlstedt, H., Park, N. Y., Stephenson, G. B., et al. (2006) · Journal of Applied Physics · doi:10.1063/1.2336999 · Cited by 1,907
Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays
Sekitani, T., Yokota, T., Zschieschang, U., Klauk, H., Bauer, S., Takeuchi, K., Takamiya, M., Sakurai, T., & Someya, T. (2009) · Science · doi:10.1126/science.1179963 · Cited by 962
Electrical Switching and Bistability in Organic/Polymeric Thin Films and Memory Devices
Yang, Y., Ouyang, J., Ma, L., Tseng, R. J. ‐., & Chu, C. ‐. (2006) · Advanced Functional Materials · doi:10.1002/adfm.200500429 · Cited by 580
Current versus gate voltage hysteresis in organic field effect transistors
Egginger, M., Bauer, S., Schwödiauer, R., Neugebauer, H., & Sariciftci, N. S. (2009) · Monatshefte für Chemie - Chemical Monthly · doi:10.1007/s00706-009-0149-z · Cited by 320
Metadata
- Authors
- Schroeder, R., Majewski, L. A., & Grell, M.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2004-04-05
- Volume
- 16
- Issue
- 7
- Pages
- 633-636
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2056130702
- Cited by
- 217
- References
- 0
- FWCI
- 14.71
- Type
- journal article
- Language
- en
- Open access
- closed
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- Schroeder, R., Majewski, L. A., & Grell, M. (2004). All‐Organic Permanent Memory Transistor Using an Amorphous, Spin‐Cast Ferroelectric‐like Gate Insulator. Advanced Materials. https://doi.org/10.1002/adma.200306187
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