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Improving Organic Thin‐Film Transistor Performance through Solvent‐Vapor Annealing of Solution‐Processable Triethylsilylethynyl Anthradithiophene

Dickey, K. C., Anthony, J. E., Loo, Y.‐L.·2006·Advanced Materials

Abstract

The current–voltage characteristics of triethylsilylethynyl anthradithiophene (TES ADT) thin-film transistors can be improved dramatically by a simple and straightforward solvent-vapor annealing process after device fabrication. Exposing the transistors to dichloroethane vapor for 2 min induces structural rearrangement and crystallization of TES ADT (see figure and cover). This procedure results in drastic increases in on currents; the saturation mobility increases by two orders of magnitude and the current–voltage hysteresis is largely eliminated.

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Metadata

Authors
Dickey, K. C., Anthony, J. E., & Loo, Y. ‐.
Venue
Advanced Materials
Publisher
Wiley
Published
2006-06-08
Volume
18
Issue
13
Pages
1721-1726
ISSN
  • 0935-9648 (ISSN-L)
  • 1521-4095
OpenAlex
W1980244507
Cited by
413
References
0
FWCI
24.29
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Improving Organic Thin‐Film Transistor Performance through Solvent‐Vapor Annealing of Solution‐Processable Triethylsilylethynyl Anthradithiophene. https://app.cochat.ai/papers/10.1002/adma.200600188
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Dickey, K. C., Anthony, J. E., & Loo, Y. ‐. (2006). Improving Organic Thin‐Film Transistor Performance through Solvent‐Vapor Annealing of Solution‐Processable Triethylsilylethynyl Anthradithiophene. Advanced Materials. https://doi.org/10.1002/adma.200600188

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