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Role of Oxygen Vacancies in Cr‐Doped SrTiO3 for Resistance‐Change Memory
Abstract
Transition metal oxides exhibiting a bistable resistance state are attractive for nonvolatile memory applications. The relevance of oxygen vacancies for the resistance-change memory is investigated by X-ray fluorescence (see figure), infrared microscopy, and X-ray absorption spectroscopy using Cr-doped SrTiO3 as an example. The microscopic origin of resistance switching in this class of materials may be due to an oxygen-vacancy drift occurring in close proximity to one of the electrodes.
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Cited by
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Memristive devices for computing
Yang, J. J., Strukov, D. B., & Stewart, D. R. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.240 · Cited by 3,885
Wong, H.-S. P., Lee, H.-Y., Yu, S., Chen, Y.-S., Wu, Y., Chen, P.-S., Lee, B., Chen, F. T., & Tsai, M.-J. (2012) · Proceedings of the IEEE · doi:10.1109/jproc.2012.2190369 · Cited by 2,757
A comprehensive review on emerging artificial neuromorphic devices
Zhu, J., Zhang, T., Yang, Y., & Huang, R. (2020) · Applied Physics Reviews · doi:10.1063/1.5118217 · Cited by 758
Metadata
- Authors
- Janousch, M., Meijer, G. I., Staub, U., Delley, B., Karg, S. F., & Andreasson, B. P.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2007-07-26
- Volume
- 19
- Issue
- 17
- Pages
- 2232-2235
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2060460743
- Cited by
- 530
- References
- 0
- FWCI
- 30.87
- Type
- journal article
- Language
- en
- Open access
- closed
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- Janousch, M., Meijer, G. I., Staub, U., Delley, B., Karg, S. F., & Andreasson, B. P. (2007). Role of Oxygen Vacancies in Cr‐Doped SrTiO3 for Resistance‐Change Memory. Advanced Materials. https://doi.org/10.1002/adma.200602915
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