The DOI matches its Crossref record; 14 of the 14 references it cites were found in a registry or an index.
Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von‐Neumann Computers
Abstract
An atomic switch is a nanoionic device that controls the diffusion of metal ions/atoms and their reduction/oxidation processes in the switching operation to form/annihilate a conductive path. Since metal atoms can provide a highly conductive channel even if their cluster size is in the nanometer scale, atomic switches may enable downscaling to smaller than the 11 nm technology node, which is a great challenge for semiconductor devices. Atomic switches also possess novel characteristics, such as high on/off ratios, very low power consumption and non‐volatility. The unique operating mechanisms of these devices have enabled the development of various types of atomic switch, such as gap‐type and gapless‐type two‐terminal atomic switches and three‐terminal atomic switches. Novel functions, such as selective volatile/nonvolatile, synaptic, memristive, and photo‐assisted operations have been demonstrated. Such atomic switch characteristics can not only improve the performance of present‐day electronic systems, but also enable development of new types of electronic systems, such as beyond von‐ Neumann computers.
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Cites
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,828
A synaptic model of memory: long-term potentiation in the hippocampus
Bliss, T. V. P., & Collingridge, G. L. (1993) · Nature · doi:10.1038/361031a0 · Cited by 11,566
Memristor—The Missing Circuit Element
Chua, L. (1971) · IEEE Transactions on Circuit Theory · doi:10.1109/tct.1971.1083337 · Cited by 10,268
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Self-citationMemristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Synaptic Plasticity and Memory: An Evaluation of the Hypothesis
Martin, S. J., Grimwood, P. D., & Morris, R. G. M. (2000) · Annual Review of Neuroscience · doi:10.1146/annurev.neuro.23.1.649 · Cited by 2,794
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Borghetti, J., Snider, G. S., Kuekes, P. J., Yang, J. J., Stewart, D. R., & Williams, R. S. (2010) · Nature · doi:10.1038/nature08940 · Cited by 1,929
Learning induces long-term potentiation in the hippocampus
Whitlock, J. R., Heynen, A. J., Shuler, M. G., & Bear, M. F. (2006) · Science · doi:10.1126/science.1128134 · Cited by 1,913
Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
Ohno, T., Hasegawa, T., Tsuruoka, T., Terabe, K., Gimzewski, J. K., & Aono, M. (2011) · Nature Materials · doi:10.1038/nmat3054 · Cited by 1,793
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Cited by
Memristive devices for computing
Yang, J. J., Strukov, D. B., & Stewart, D. R. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.240 · Cited by 3,885
Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing
Wang, Z., Joshi, S., Savel’ev, S. E., Jiang, H., Midya, R., Lin, P., Hu, M., Ge, N., Strachan, J. P., Li, Z., et al. (2017) · Nature Materials · doi:10.1038/nmat4756 · Cited by 2,358
Memristor‐Based Analog Computation and Neural Network Classification with a Dot Product Engine
Hu, M., Graves, C. E., Li, C., Li, Y., Ge, N., Montgomery, E., Davila, N., Jiang, H., Williams, R. S., Yang, J. J., et al. (2018) · Advanced Materials · doi:10.1002/adma.201705914 · Cited by 751
The Future of Memristors: Materials Engineering and Neural Networks
Sun, K., Chen, J., & Yan, X. (2021) · Advanced Functional Materials · doi:10.1002/adfm.202006773 · Cited by 482
Forming nanomaterials as layered functional structures toward materials nanoarchitectonics
Ariga, K., Ji, Q., Hill, J. P., Bando, Y., & Aono, M. (2012) · NPG Asia Materials · doi:10.1038/am.2012.30 · Cited by 403
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Metadata
- Authors
- Hasegawa, T., Terabe, K., Tsuruoka, T., & Aono, M.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2011-09-29
- Volume
- 24
- Issue
- 2
- Pages
- 252-267
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2021656562
- Cited by
- 391
- References
- 14
- FWCI
- 15.37
- Type
- journal article
- Language
- en
- Open access
- closed
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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