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Cited by 3,4222D Materials and ApplicationsGraphene research and applicationsTransition Metal Oxide Nanomaterials

Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition

Open access
Lee, Yi‐Hsien, Zhang, Xin‐Quan, Zhang, Wenjing, Chang, Mu‐Tung, Lin, Cheng‐Te, Chang, Kai‐Di, Yu, Ya‐Chu, Wang, Jacob Tse‐Wei +3 more·2012·Advanced Materials
DOI 10.1002/adma.201104798
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Abstract

Large-area MoS(2) atomic layers are synthesized on SiO(2) substrates by chemical vapor deposition using MoO(3) and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS(2) monolayer. The TEM images verify that the synthesized MoS(2) sheets are highly crystalline.

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  • CVD is an ideal method to prepare high-quality, few-defect MoS2 nanosheets with controllable layer numbers on different substrates.

    “CVD is an ideal method to prepare high-quality, few-defect MoS 2 nanosheets with controllable layer numbers on different substrates. [ 77-80 ]”

    From 2D Transition‐Metal‐Dichalcogenide‐Nanosheet‐Based Composites for Photocatalytic and Electrocatalytic Hydrogen Evolution Reactions (2016) · cites this paper as [80]

    The conclusion (p. 3) reports CVD-grown monolayer, bilayer and few-layer MoS₂ on SiO₂/Si, notes growth on sapphire, and describes the monolayer as highly crystalline. But observing different layer thicknesses does not establish control over layer number; the paper also does not establish that the sheets have few defects. (LLM, conf=0.86)

    Experimental — accuracy not yet measured

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Sorted by citations

Authors
Lee, Y., Zhang, X., Zhang, W., Chang, M., Lin, C., Chang, K., Yu, Y., Wang, J. T., Chang, C., Li, L., & Lin, T.
Affiliations
  • Institute of Atomic and Molecular Sciences, Academia Sinica (TW)
  • Institute of Physics, Academia Sinica (TW)
  • Tunghai University (TW)
Corresponding author
  • Li, Lain‐Jong
  • Lin, Tsung‐Wu
ORCID
Venue
Advanced Materials
Publisher
Wiley
Published
2012-03-30
Volume
24
Issue
17
Pages
2320-2325
ISSN
  • 0935-9648 (ISSN-L)
  • 1521-4095
DOI
10.1002/adma.201104798
OpenAlex
W2037811931
Cited by
3,422
References
1
Citations by year
2026: 105 · 2025: 130 · 2024: 151 · 2023: 172 · 2022: 230 · 2021: 250 · 2020: 301 · 2019: 345 · 2018: 359 · 2017: 401 · 2016: 320 · 2015: 289 · 2014: 235 · 2013: 108 · 2012: 23
FWCI
96.38
Type
journal article
Language
en
Open access
Licence
onlinelibrary.wiley.com/termsAndConditions#vor (vor)
Locations
  • Advanced Materials (publishedVersion)
  • PubMed (publishedVersion)
  • arXiv (Cornell University) (submittedVersion)
  • arXiv (Cornell University)
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
  • Physical Sciences › Materials Science › Materials Chemistry › Graphene research and applications
  • Physical Sciences › Materials Science › Polymers and Plastics › Transition Metal Oxide Nanomaterials
Keywords
MoS2, monolayer MoS2, two-dimensional materials, chemical vapor deposition, large-area synthesis, SiO2 substrate, MoO3 precursor, sulfur precursor, crystallinity, electrical properties
MeSH terms
Disulfides, Gases, Molybdenum, Oxides, Silicon Dioxide, Nanostructures

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