The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
GaS and GaSe Ultrathin Layer Transistors
Abstract
Room-temperature, bottom-gate, field-effect transistor characteristics of 2D ultrathin layer GaS and GaSe prepared from the bulk crystals using a micromechanical cleavage technique are reported. The transistors based on active GaS and GaSe ultrathin layers demonstrate typical n-and p-type conductance transistor operation along with a good ON/OFF ratio and electron differential mobility.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Geim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
Graphene: Status and Prospects
Geim, A. K. (2009) · Science · doi:10.1126/science.1158877 · Cited by 13,942
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
Xia, Y., Qian, D., Hsieh, D., Wray, L., Pal, A., Lin, H., Bansil, A., Grauer, D., Hor, Y. S., Cava, R. J., et al. (2009) · Nature Physics · doi:10.1038/nphys1274 · Cited by 3,765
Cited by
Photocurrent generation with two-dimensional van der Waals semiconductors
Buscema, M., Island, J. O., Groenendijk, D. J., Blanter, S. I., Steele, G. A., van der Zant, H. S. J., & Castellanos-Gomez, A. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00106d · Cited by 1,051
Zeng, M., Xiao, Y., Liu, J., Yang, K., & Fu, L. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00633 · Cited by 574
Wide Band Gap Chalcogenide Semiconductors
Woods-Robinson, R., Han, Y., Zhang, H., Ablekim, T., Khan, I., Persson, K. A., & Zakutayev, A. (2020) · Chemical Reviews · doi:10.1021/acs.chemrev.9b00600 · Cited by 513
Two-dimensional transistors beyond graphene and TMDCs
Liu, Y., Duan, X., Huang, Y., & Duan, X. (2018) · Chemical Society Reviews · doi:10.1039/c8cs00318a · Cited by 474
Single-layer MoSe2 based NH3 gas sensor
Late, D. J., Doneux, T., & Bougouma, M. (2014) · Applied Physics Letters · doi:10.1063/1.4903358 · Cited by 407
Self-citation
Metadata
- Authors
- Late, D. J., Liu, B., Luo, J., Yan, A., Matte, H. S. S. R., Grayson, M., Rao, C. N. R., & Dravid, V. P.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2012-06-08
- Volume
- 24
- Issue
- 26
- Pages
- 3549-3554
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2059603517
- Cited by
- 673
- References
- 4
- FWCI
- 17.09
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: GaS and GaSe Ultrathin Layer Transistors. https://app.cochat.ai/papers/10.1002/adma.201201361
- The paper
- Late, D. J., Liu, B., Luo, J., Yan, A., Matte, H. S. S. R., Grayson, M., Rao, C. N. R., & Dravid, V. P. (2012). GaS and GaSe Ultrathin Layer Transistors. Advanced Materials. https://doi.org/10.1002/adma.201201361
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
