Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
Open accessAbstract
Y. Xia, 2 D. Qian, 3 D. Hsieh, 2 L. Wray, A. Pal, H. Lin, A. Bansil, D. Grauer, Y. S. Hor, R. J. Cava, and M. Z. Hasan 2 Department of Physics, Princeton University, Princeton, NJ 08544, USA Princeton Center for Complex Materials, Princeton University, Princeton, NJ 08544, USA Department of Physics, Shanghai Jiao Tong University, Shanghai 200030, China Department of Physics, Northeastern University, Boston, MA 02115, USA Department of Chemistry, Princeton University, Princeton, NJ 08544, USA (Dated: Submitted for publication in December 2008)
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Claims the paper makes
8 of 8 cited sources checked · 5 supported · 0 flagged · accuracy not yet measured
- Interpretationcitation
If the chemical potential lies inside the bandgap, as it should in purely insulating Bi2Se3, its surface must carry a global π mod 2π Berry phase.
“Therefore, if the chemical potential (Fermi level) lies inside the bandgap, as it should in purely insulating Bi 2 Se 3 , its surface must carry a global π mod 2π Berry phase.”
Quote in the paperSubstantial claim1 of 1 sources checked- cites [7] Fu, L. & Kane, C. L. Topological insulators with inversion symmetry. Phys. Rev. B 76, 045302 (2007). source
The “Strong topological insulator” section says that an electron circling a surface Fermi arc acquires a quantized Berry phase when the arc encloses a single Dirac point (page unavailable in our copy). It does not establish this for Bi₂Se₃ or say that placing the chemical potential in a bulk gap alone guarantees it; the result is conditional on the strong topological-insulator phase. (LLM, conf=0.88)
Experimental — accuracy not yet measured
- Interpretationown data
This provides evidence that insulating Bi2Se3 belongs to the Z2 = −1 topological class in the Fu-Kane-Mele topological classification scheme for band insulators.
“This provides evidence that insulating Bi 2 Se 3 belongs to the Z 2 = -1 topological class in the Fu-Kane-Mele topological classification scheme for band insulators.”
Quote in the paperSubstantial claim1 of 1 sources checked- cites [7] Fu, L. & Kane, C. L. Topological insulators with inversion symmetry. Phys. Rev. B 76, 045302 (2007). source
Section II describes a Z₂ classification of band insulators, supporting the attribution of the classification scheme to this paper. But the paper’s materials discussion identifies Bi₁₋ₓSbₓ, strained α-Sn and HgTe—not Bi₂Se₃—as strong topological insulators. It does not provide evidence for the claimed classification of insulating Bi₂Se₃. Page numbers were unavailable in our copy. (LLM, conf=0.86)
Experimental — accuracy not yet measured
- Interpretationreasoning
Its simplest topological surface spectrum would make it possible to observe and study many exotic quantum phenomena predicted in topological field theories, such as Majorana fermions, magnetic monopole image or topological exciton condensates, by transport probes.
“Its simplest topological surface spectrum would make it possible to observe and study many exotic quantum phenomena predicted in topological field theories, such as the Majorana fermions 14 , magnetic monopole image 9,10 or topological exciton condensates 15 , by transport probes.”
Quote in the paperSubstantial claim4 of 4 sources checked- cites [14] Fu, L. & Kane, C. L. Superconducting proximity effect and Majorana fermions at the surface of a topological insulator. Phys. Rev. Lett. 100, 096407 (2008). source
- cites [9] Franz, M. High-energy physics in a new guise. Physics 1, 36 (2008). source
Split into 2 atoms — 0 confirmed, 2 partially supported, 0 disputed, 0 misattributed, 0 unverifiable. Expand the claim to see per-atom verdicts.
Experimental — accuracy not yet measured - cites [10] Qi, X.-L., Li, R., Zang, J. & Zhang, S.-C. Inducing a magnetic monopole with topological surface states. Science 323, 1184–1187 (2009). source
- cites [15] Seradjeh, B., Moore, J. E. & Franz, M. Exciton condensation and charge fractionalization in a topological insulator film. Preprint at <http://arxiv.org/abs/0902.1147v1> (2009). source
- Interpretationreasoning
This calculated topology is consistent with the Z2 = −1 class in the Fu-Kane-Mele classification scheme.
“This topology is consistent with the Z 2 = -1 class in the Fu-Kane-Mele classification scheme 7 .”
Quote in the paperSubstantial claim1 of 1 sources checked- cites [7] Fu, L. & Kane, C. L. Topological insulators with inversion symmetry. Phys. Rev. B 76, 045302 (2007). source
- Findingown data
The Dirac point lies inside the bulk bandgap.
“The red curve is measured right at the -point, which suggests that the Dirac point lies inside the bulk bandgap.”
Quote in the paperSubstantial claim
- Findingown data
An ARPES study reveals the first observation of a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi2Se3 class of materials.
“Here we present an angle-resolved photoemission spectroscopy study that reveals the first observation of such a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi 2 Se 3 class of materials.”
Quote in the paperSubstantial claim- Rests on an assumption: Before this study, nothing was known about the surface states of Bi2Se3.
- Findingown data
The naturally grown Bi2Se3 semiconductor used in the experiment is n-type, as independently confirmed by transport measurements.
“This is consistent with the fact that naturally grown Bi 2 Se 3 semiconductor used in our experiment is n-type, as independently confirmed by our transport measurements.”
Quote in the paperSubstantial claim - Findingown data
A bandgap of about 0.3 eV is realized in the bulk of the undoped material.
“Taking the bottom of the 'U' band as the bulk conduction-band minimum, we estimate that a bandgap of about 0.3 eV is realized in the bulk of the undoped material.”
Quote in the paperSubstantial claim - Findingown data
The calculated band topology with realistic SOC leads to a single ring-like surface Fermi surface that is singly degenerate so long as the chemical potential is inside the bulk bandgap.
“The calculated band topology with realistic SOC leads to a single ring-like surface FS, which is singly degenerate so long as the chemical potential is inside the bulk bandgap.”
Quote in the paperSubstantial claim - Findingown data
A global agreement between the experimental band structure and the theoretical calculation is obtained by considering a rigid shift of the chemical potential by about 200 meV with respect to the calculated band structure of the formula compound Bi2Se3.
“A global agreement between the experimental band structure (Fig. 1a-c) and our theoretical calculation (Fig. 1f) is obtained by considering a rigid shift of the chemical potential by about 200 meV with respect to our calculated band structure (Fig. 1f) of the formula compound Bi 2 Se 3 .”
Quote in the paperSubstantial claim - Findingown data
A ring-like feature formed by the outer V pure SS band surrounds the conduction-band continuum centred at Γ.
“A ring-like feature formed by the outer 'V' pure SS band (a horizontal cross-section of the upper Dirac cone in Fig. 1) surrounds the conduction-band continuum centred at .”
Quote in the paperSubstantial claim - Findingown data
A continuum-like manifold of states-a filled U-shaped feature-is observed inside the V-shaped band pair.
“A continuum-like manifold of states-a filled U-shaped feature-is observed inside the V-shaped band pair.”
Quote in the paperSubstantial claim - Interpretationown data
Undoped Bi2Se3 can serve as the parent matrix compound for a topological device in which in-plane carrier transport would have a purely quantum topological origin.
“Our results, supported by our theoretical calculations, demonstrate that undoped Bi 2 Se 3 can serve as the parent matrix compound for the long-sought topological device where in-plane carrier transport would have a purely quantum topological origin.”
Quote in the paperSubstantial claim - Interpretationown data
All experimentally observed features can be identified, to first order, by a direct one-to-one comparison with the LDA band calculations.
“All of these experimentally observed features can be identified, to first order, by a direct one-to-one comparison with the LDA band calculations.”
Quote in the paperSubstantial claim - Interpretationreasoning
The surface transport of Bi2Se3 prepared as such would be dominated by topological effects because it possesses only one Dirac fermion that carries the non-trivial Z2 index.
“The surface transport of Bi 2 Se 3 prepared as such would therefore be dominated by topological effects as it possesses only one Dirac fermion that carries the non-trivial Z 2 index.”
Quote in the paperSubstantial claim - Interpretationreasoning
The ring is singly degenerate from its one-to-one correspondence to the band calculation.
“This ring is singly degenerate from its one-to-one correspondence to band calculation.”
Quote in the paperSubstantial claim - Interpretationreasoning
The existence of a large bulk bandgap (0.3 eV) within which the observed Z2 Dirac fermion state lies suggests the realistic possibility for the observation of topological effects even at room temperature in this material class.
“The existence of a large bulk bandgap (0.3 eV) within which the observed Z 2 Dirac fermion state lies suggests the realistic possibility for the observation of topological effects even at room temperature in this material class.”
Quote in the paperSubstantial claim - Interpretationown data
The theoretical calculation supported by the experimental data suggests that in insulating Bi2Se3 there exists a singly degenerate surface Fermi surface which encloses only one Kramers point on the surface Brillouin zone.
“Our theoretical calculation supported by our experimental data suggests that in insulating Bi 2 Se 3 there exists a singly degenerate surface FS which encloses only one Kramers point on the surface Brillouin zone.”
Quote in the paperSubstantial claim - Interpretationreasoning
The undoped Bi2Se3 compound reached via n-to-p doping should show topological transport phenomena even at room temperature.
“Our study further suggests that the undoped compound reached via n-to-p doping should show topological transport phenomena even at room temperature.”
Quote in the paperSubstantial claim - Interpretationreasoning
The magnitude of band bending near the surface is not larger than 0.05 eV.
“This suggests that the magnitude of band bending near the surface is not larger than 0.05 eV.”
Quote in the paperSubstantial claim - Interpretationown data
On the basis of the ARPES data, it should be possible to obtain the fully undoped compound by chemically hole-doping the naturally occurring Bi2Se3, thereby shifting the chemical potential to lie inside the bulk bandgap.
“On the basis of our ARPES data we suggest that it should be possible to obtain the fully undoped compound by chemically hole-doping the naturally occurring Bi 2 Se 3 , thereby shifting the chemical potential to lie inside the bulk bandgap.”
Quote in the paperSubstantial claim - Interpretationreasoning
The experimental sign of the rigid shift (raised chemical potential) corresponds to electron doping of the Bi2Se3 insulating formula matrix.
“The experimental sign of this rigid shift (the raised chemical potential) corresponds to an electron doping of the Bi 2 Se 3 insulating formula matrix (see Supplementary Information).”
Quote in the paperSubstantial claim
- May combine two claims. 7
- Classified as probably not a substantial claim. 2
May combine two claims.
Findingown dataIn the complete surface Fermi surface map, all observed features are centred around Γ, and none of the three TRIMs located at M are enclosed by any Fermi surface, in contrast to Bi1-xSbx.
“All the observed features are centred around .None of the three TRIMs located at M are enclosed by any FS, in contrast to what is observed in Bi 1-x Sb x (ref.5).”
Quote in the paperSubstantial claim1 of 1 sources checked- cites [5] Hsieh, D. et al. A topological Dirac insulator in a quantum spin Hall phase. Nature 452, 970–974 (2008). source
May combine two claims.
Findingown dataThe V-shaped band pair crosses the Fermi level at 0.09 Å−1 along Γ-M and at 0.10 Å−1 along Γ-K, and has nearly equal band velocities of approximately 5 × 10^5 m s−1 along the two directions.
“The 'V' bands cross E F at 0.09 Å -1 along -M and at 0.10 Å -1 along -K, and have nearly equal band velocities, approximately 5 × 10 5 m s -1 , along the two directions.”
Quote in the paperSubstantial claimMay combine two claims.
Findingown dataIn the kz-dependent study, two bands dispersing in kz with energies below −0.3 eV reflect the bulk valence bands, in addition to two non-dispersive features associated with the two sides of the pure SS Dirac bands.
“In our k z -dependent study of the bands (Fig. 2b) we also observe two bands dispersing in k z that have energies below -0.3 eV (blue dotted bands), reflecting the bulk valence bands, in addition to two other non-dispersive features associated with the two sides of the pure SS Dirac bands.”
Quote in the paperSubstantial claimMay combine two claims.
Findingown dataThe calculated band structure with SOC shows singly degenerate gapless surface bands that are guaranteed to cross the Fermi level, whereas no surface band crosses the Fermi level if SOC is not included.
“Our calculated result shows that no surface band crosses the Fermi level if SOC is not included in the calculation, and only with the inclusion of the realistic values of SOC (based on atomic Bi) does the calculated spectrum show singly degenerate gapless surface bands that are guaranteed to cross the Fermi level.”
Quote in the paperSubstantial claimMay combine two claims.
Findingown dataThe photon-energy study did not indicate a strong kz dispersion of the lowest-lying energy bands on the 'U', although the full continuum does have some dispersion.
“Our photonenergy study did not indicate a strong k z dispersion of the lowestlying energy bands on the 'U', although the full continuum does have some dispersion (Fig. 2).”
Quote in the paperSubstantial claimProbably not a substantial claim: may not pass S3 (load-bearing), S4 (based).
Study design and conductnone givenThe surface band quasiparticle signal is stable throughout the entire measurement duration.
“The surface band quasiparticle signal is stable throughout the entire measurement duration.”
Quote in the paperNot a substantial claimProbably not a substantial claim: may not pass S2 (checkable), S3 (load-bearing).
InterpretationreasoningBecause of the simplest possible topological surface spectrum realized in Bi2Se3, it can be considered as the 'hydrogen atom' of strong topological insulators.
“Because of the simplest possible topological surface spectrum realized in Bi 2 Se 3 , it can be considered as the 'hydrogen atom' of strong topological insulators.”
Quote in the paperNot a substantial claimMay combine two claims.
InterpretationreasoningIn purely insulating Bi2Se3 the Fermi level should lie deep inside the bandgap and only pure surface bands will contribute to surface conduction.
“We note that in purely insulating Bi 2 Se 3 the Fermi level should lie deep inside the bandgap and only pure surface bands will contribute to surface conduction.”
Quote in the paperNot a substantial claimMay combine two claims.
InterpretationreasoningThe inner electron-pocket continuum features are probably a mixture of surface-projected conduction-band states, band-bending effects near the surface, and the full continuum of bulk conduction-band states sampled from a few layers beneath the surface.
“The lack of strong dispersion yet close one-to-one correspondence to the calculated bulk band structure suggests that the inner electron pocket continuum features are probably a mixture of surface-projected conduction-band states, which also includes some band-bending effects near the surface and the full continuum of bulk conduction-band states sampled from a few layers beneath the surface.”
Quote in the paperSubstantial claim
The paper relies on this without support.
Before this study, nothing was known about the surface states of Bi2Se3.
“All previous experimental studies of Bi 2 Se 3 have focused on the material's bulk properties; nothing is known about its SSs.”
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
The inverted band structure is closely related to topological insulators such as Bi2Te3 and Bi2Se3.
“The inverted band structure is closely related to topological insulators, such as Bi2Te3 and Bi2Se34243.”
From Photonic simulation of topological excitations in metamaterials (2014) · cites this paper as [43]
The paper’s discussion of bulk band inversions says that one band is expected to be inverted in Bi2Se3, and it identifies insulating Bi2Se3 as a topological insulator (section labeled Abstract; page unavailable). It mentions the related Bi2X3 family (X = Se, Te), but does not establish an inverted band structure for Bi2Te3. (LLM, conf=0.84)
Experimental — accuracy not yet measuredStrong 3D topological insulators have topological surface states that form unpaired Dirac points.
“Strong 3D topological insulators, on the other hand, have topological surface states that form unpaired Dirac points16,28–30”
From Observation of an unpaired photonic Dirac point (2020) · cites this paper as [29]
The topological order observed in Pb1-xSnxTe is distinct from that previously discovered in Bi1-xSbx or Bi2Se3.
“These results show that the topological order observed in Pb 1 À x Sn x Te is distinct from that previously discovered in Bi 1 À x Sb x or Bi 2 Se 3 (refs 1-5).”
From Observation of a topological crystalline insulator phase and topological phase transition in Pb1−xSnxTe (2012) · cites this paper as [4]
The topological order in TlBi(S1-δSeδ)2 originates from Bi and Se atoms.
“Because the topological order in TlBi(S 1 -δ Se δ ) 2 originates from Bi and Se atoms and to illustrate an analogy with the known topological insulator Bi 2 Se 3 ( 6, 8, 11 )”
From Topological Phase Transition and Texture Inversion in a Tunable Topological Insulator (2011) · cites this paper as [8]
In 2008, work led by a Princeton group used ARPES and first-principles calculations to study the surface band structure of Bi2Se3 and observe the characteristic signature of a topological insulator in the form of a single-Dirac-cone.
“In 2008, work led by a Princeton group used angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations to study the surface band structure of Bi 2 Se 3 and observe the characteristic signature of a topological insulator in the form of a single-Dirac-cone (21,22).”
From Three-Dimensional Topological Insulators (2011) · cites this paper as [21]
The origin of the topological insulator state in Bi2Se3 is a symmetry inversion at Γ, and electronic states near the Brillouin-zone boundary resemble those of topologically trivial materials.
“This can be understood because the origin of the topological insulator state in Bi 2 Se 3 is a symmetry inversion that occurs at the point 7,18 , and the electronic states close to the Brillouin-zone boundary are similar to those of topologically trivial materials.”
From A topological insulator surface under strong Coulomb, magnetic and disorder perturbations (2011) · cites this paper as [7]
Topological insulators are a state of bulk matter with spin-momentum-locked surface states that span the bulk bandgap.
“Topological insulators embody a state of bulk matter characterized by spin-momentum-locked surface states that span the bulk bandgap 1-7 .”
From A topological insulator surface under strong Coulomb, magnetic and disorder perturbations (2011) · cites this paper as [7]
Momentum along the z axis was determined using an inner potential of 9.5 eV, consistent with previous photoemission investigations of undoped Bi2Se3.
“Momentum along the ẑ axis is determined using an inner potential of 9.5 eV, consistent with previous photoemission investigations of undoped Bi 2 Se 3 (refs 7,22).”
From A topological insulator surface under strong Coulomb, magnetic and disorder perturbations (2011) · cites this paper as [7]
Bi2Se3 is a topological insulator.
“Bi2 Se3 is one of a handful of known topological insulators.”
Topological insulator surface states are topologically protected against all time-reversal-invariant perturbations, such as scattering by non-magnetic impurities, crystalline defects, and distortion of the surface itself.
“These robust low-dimensional conducting states are topologically protected against all time-reversal-invariant perturbations, such as scattering by non-magnetic impurities, crystalline defects, and distortion of the surface itself.”
From Aharonov–Bohm interference in topological insulator nanoribbons (2010) · cites this paper as [4]
In contrast to graphene, the remarkable property of topological edge states is that their dispersion is characterized by an odd number of nondegenerate Dirac cones.
“In contrast to graphene, which has four Dirac cones (2 doubly degenerate cones at the K and K 0 points in momentum space) [9], the remarkable property of topological edge states is that their dispersion is characterized by an odd number of nondegenerate Dirac cones.”
From Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi2Te3 and Sb2Te3 (2009) · cites this paper as [7]
Topological insulators were recently proposed and shortly afterwards discovered in the Bi1-xSbx and Bi2Se3 materials.
“They were recently proposed [2-4] and shortly afterwards discovered in the Bi1 x Sb x [5,6] and Bi2 Se 3 [7,8] materials.”
From Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi2Te3 and Sb2Te3 (2009) · cites this paper as [7]
ARPES and theoretical evidence suggest that Bi2Se3 is a large band gap (~300 meV) single-Dirac-cone topological insulator.
“More recently, angle-resolved photoemission spectroscopy (ARPES) and theoretical [7,19] evidence suggest that Bi2 Se 3 is a large band gap ( 300 meV ) single-Dirac-cone topological insulator.”
From Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi2Te3 and Sb2Te3 (2009) · cites this paper as [7]
There is an additional contribution to the density of states around momentum Γ from the spin-degenerate bulk conduction band in Bi2Se3.
“there is an additional contribution to the density of states around momentum ¯ Γ from the spin-degenerate bulk conduction band in Bi 2 Se 3 [15].”
From A tunable topological insulator in the spin helical Dirac transport regime (2009) · cites this paper as [15]
Bi_xSb_{1-x} was suggested to be a three-dimensional topological insulator with topologically non-trivial surface states, which were observed by ARPES.
“Later, Bi x Sb 1 -x was suggested to be a three-dimensional (3D) TI[8] with topologically non-trivial surface states, which were observed by angle-resolved photoemission spectroscopy (ARPES)[9].”
From Model Hamiltonian for topological insulators (2010) · cites this paper as [9]
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BackgroundDetermination of the valence band dispersions for Bi2Se3 using angle resolved photoemission
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A tunable topological insulator in the spin helical Dirac transport regime
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Floquet topological insulator in semiconductor quantum wells
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Topological Insulator Materials
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Topological Materials: Weyl Semimetals
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Self-citationCrossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit
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Massive Dirac Fermion on the Surface of a Magnetically Doped Topological Insulator
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Topological States and Adiabatic Pumping in Quasicrystals
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Interface Physics in Complex Oxide Heterostructures
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Multiple Dirac cones at the surface of the topological metal LaBi
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Tunable multifunctional topological insulators in ternary Heusler compounds
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Model Hamiltonian for topological insulators
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Majorana Fermion Induced Resonant Andreev Reflection
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Quantum Oscillations and Hall Anomaly of Surface States in the Topological Insulator Bi 2 Te 3
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Self-citationThe Thermoelectric Properties of Bismuth Telluride
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Higher-order topology in bismuth
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Topological defects and gapless modes in insulators and superconductors
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Aharonov–Bohm interference in topological insulator nanoribbons
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Observation of Fermi arc surface states in a topological metal
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Self-citationComprehensive search for topological materials using symmetry indicators
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Experimental Demonstration of Topological Surface States Protected by Time-Reversal Symmetry
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Self-citationBerry Phases in Electronic Structure Theory
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All-Si valley-Hall photonic topological insulator
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Self-citationTopological Superconductivity in CuxBi2Se3
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GaS and GaSe Ultrathin Layer Transistors
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Antiferromagnetic topological insulators
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Three-Dimensional Topological Insulators
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Self-citationThe space group classification of topological band-insulators
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Control over topological insulator photocurrents with light polarization
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Self-citationGate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi2Se3
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The Quantum Anomalous Hall Effect: Theory and Experiment
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Ultra-short pulse generation by a topological insulator based saturable absorber
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Topologically robust sound propagation in an angular-momentum-biased graphene-like resonator lattice
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Massive Dirac fermions and spin physics in an ultrathin film of topological insulator
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“These phases result in remarkably robust macroscopic phenomena such as the edge modes in integer quantum Hall systems [1], the gapless surface states of topological insulators [2, 3], and elementary excitations with non-abelian statistics in fractional quantum Hall systems and topological superconductors[4].”
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A topological insulator surface under strong Coulomb, magnetic and disorder perturbations
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Self-citationRelativistic Effects in Chemistry: More Common Than You Thought
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Computing topological invariants without inversion symmetry
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All-Optical Reconstruction of Crystal Band Structure
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The Coexistence of Superconductivity and Topological Order in the Bi 2 Se 3 Thin Films
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Self-citationExperimental realization of photonic topological insulator in a uniaxial metacrystal waveguide
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Angle-resolved photoemission studies of quantum materials
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Oscillatory crossover from two-dimensional to three-dimensional topological insulators
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Solids, liquids, and gases under high pressure
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Quantum Hall effect from the topological surface states of strained bulk HgTe.
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Colloquium : Quantum anomalous Hall effect
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Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3
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Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures
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Recent advances in 2D, 3D and higher-order topological photonics
Kim, M., Jacob, Z., & Rho, J. (2020) · Light Science & Applications · doi:10.1038/s41377-020-0331-y · Cited by 466 · see citing works
Kambe, T., Sakamoto, R. L., Kusamoto, T., Pal, T., Fukui, N., Hoshiko, K., Shimojima, T., Wang, Z., Hirahara, T., Ishizaka, K., et al. (2014) · Journal of the American Chemical Society · doi:10.1021/ja507619d · Cited by 469 · see citing works
Topological Phase Transition and Texture Inversion in a Tunable Topological Insulator
Xu, S.-Y., Xia, Y., Wray, L. A., Jia, S., Meier, F., Dil, J. H., Osterwalder, J., Slomski, B., Bansil, A., Lin, H., et al. (2011) · Science · doi:10.1126/science.1201607 · Cited by 461 · see citing works
Self-citationDevelopment of ferromagnetism in the doped topological insulator Bi2−xMnxTe3
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Self-citationObservation of topological order in a superconducting doped topological insulator
Wray, L. A., Xu, S.-Y., Xia, Y., Hor, Y. S., Qian, D., Fedorov, A. V., Lin, H., Bansil, A., Cava, R. J., & Hasan, M. Z. (2010) · Nature Physics · doi:10.1038/nphys1762 · Cited by 464 · see citing works
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Self-citationFew-Layer Nanoplates of Bi2Se3 and Bi2Te3 with Highly Tunable Chemical Potential
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Wannier representation of Z 2 topological insulators
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Moore, J. (2009) · Nature Physics · doi:10.1038/nphys1294 · Cited by 444 · see citing works
- Authors
- Xia, Y., Qian, D., Hsieh, D., Wray, L., Pal, A., Lin, H., Bansil, A., Grauer, D., Hor, Y. S., Cava, R. J., & Hasan, M. Z.
- Affiliations
- Princeton University (US)
- Shanghai Jiao Tong University (CN)
- Northeastern University (US)
- Corresponding author
- Hasan, M. Z.
- Venue
- Nature Physics
- Published
- 2009-05-10
- Volume
- 5
- Issue
- 6
- Pages
- 398-402
- ISSN
- 1745-2473 (ISSN-L)
- 1745-2481
- OpenAlex
- W1552055731
- Semantic Scholar
- d3bcc8a78db93feda0054d8d2f8a9f7811dfd502
- Cited by
- 3,765
- References
- 28
- Citations by year
- 2026: 105 · 2025: 141 · 2024: 142 · 2023: 155 · 2022: 199 · 2021: 208 · 2020: 225 · 2019: 198 · 2018: 272 · 2017: 252 · 2016: 274 · 2015: 291 · 2014: 267 · 2013: 297 · 2012: 308
- FWCI
- 136.90
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Licence
- Locations
- Nature Physics (publishedVersion)
- arXiv (Cornell University) (submittedVersion)
- UCL Discovery (University College London) (submittedVersion)
- CaltechAUTHORS (California Institute of Technology) (submittedVersion)
- arXiv (Cornell University)
- Funders
- National Science Foundation (0819860)
- U.S. Department of Energy (DE‐FG02‐, DEFG0205ER46200, FG02-05ER46200)
- Princeton University
- Princeton Center for Complex Materials (DMR-0819860)
- National Energy Research Scientific Computing Center
- National Natural Science Foundation of China (10874116)
- Office of Science
- Materials Research Science and Engineering Center, Harvard University (NSF-DMR-0819860, DMR-0819860)
- Division of Materials Research (DMR-0819860)
- Basic Energy Sciences (DE-FG-02-07ER46352, DE-FG02)
- Topics
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Topological Materials and Phenomena
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Advanced Condensed Matter Physics
- Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
- Keywords
- topological insulators, Bi2Se3, surface states, spin-orbit coupling, axion field, topological superconductors, fault-tolerant quantum computing, angle-resolved photoemission
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