The DOI matches its Crossref record; 12 of the 12 references it cites were found in a registry or an index.
Towards the Development of Flexible Non‐Volatile Memories
Abstract
Flexible non‐volatile memories have attracted tremendous attentions for data storage for future electronics application. From device perspective, the advantages of flexible memory devices include thin, lightweight, printable, foldable and stretchable. The flash memories, resistive random access memories (RRAM) and ferroelectric random access memory/ferroelectric field‐effect transistor memories (FeRAM/FeFET) are considered as promising candidates for next generation non‐volatile memory device. Here, we review the general background knowledge on device structure, working principle, materials, challenges and recent progress with the emphasis on the flexibility of above three categories of non‐volatile memories.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
Superior Thermal Conductivity of Single-Layer Graphene
Balandin, A. A., Ghosh, S., Bao, W., Calizo, I., Teweldebrhan, D., Miao, F., & Lau, C. N. (2008) · Nano Letters · doi:10.1021/nl0731872 · Cited by 13,823
Experimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Electronic properties of two-dimensional systems
Ando, T., Fowler, A. B., & Stern, F. (1982) · Reviews of Modern Physics · doi:10.1103/revmodphys.54.437 · Cited by 7,455
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Memristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Lee, M.-J., Lee, C. B., Lee, D., Lee, S. R., Chang, M., Hur, J. H., Kim, Y.-B., Kim, C.-J., Seo, D. H., Seo, S., et al. (2011) · Nature Materials · doi:10.1038/nmat3070 · Cited by 2,228
Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays
Sekitani, T., Yokota, T., Zschieschang, U., Klauk, H., Bauer, S., Takeuchi, K., Takamiya, M., Sakurai, T., & Someya, T. (2009) · Science · doi:10.1126/science.1179963 · Cited by 962
Yang, Y. C., Pan, F., Liu, Q., Liu, M., & Zeng, F. (2009) · Nano Letters · doi:10.1021/nl900006g · Cited by 876
Programmable Resistance Switching in Nanoscale Two-Terminal Devices
Jo, S. H., Kim, K.-H., & Lu, W. (2009) · Nano Letters · doi:10.1021/nl803669s · Cited by 302
Cited by
Liu, K., Ouyang, B., Guo, X., Guo, Y., & Liu, Y. (2022) · npj Flexible Electronics · doi:10.1038/s41528-022-00133-3 · Cited by 554
3D Printed Photoresponsive Devices Based on Shape Memory Composites
Yang, H., Leow, W. R., Wang, T., Wang, J., Yu, J., He, K., Qi, D., Wan, C., & Chen, X. (2017) · Advanced Materials · doi:10.1002/adma.201701627 · Cited by 483
The Future of Memristors: Materials Engineering and Neural Networks
Sun, K., Chen, J., & Yan, X. (2021) · Advanced Functional Materials · doi:10.1002/adfm.202006773 · Cited by 482
Organic crystalline materials in flexible electronics
Wang, Y., Sun, L., Wang, C., Yang, F., Ren, X., Zhang, X., Dong, H., & Hu, W. (2019) · Chemical Society Reviews · doi:10.1039/c8cs00406d · Cited by 434
Harris, K. D., Elias, A. L., & Chung, H.-J. (2016) · Journal of Materials Science · doi:10.1007/s10853-015-9643-3 · Cited by 403
Metadata
- Authors
- Han, S., Zhou, Y., & Roy, V. A. L.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2013-08-22
- Volume
- 25
- Issue
- 38
- Pages
- 5425-5449
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W1988281217
- Cited by
- 555
- References
- 12
- FWCI
- 25.96
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Towards the Development of Flexible Non‐Volatile Memories. https://app.cochat.ai/papers/10.1002/adma.201301361
- The paper
- Han, S., Zhou, Y., & Roy, V. A. L. (2013). Towards the Development of Flexible Non‐Volatile Memories. Advanced Materials. https://doi.org/10.1002/adma.201301361
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.