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Cited by 555

The DOI matches its Crossref record; 12 of the 12 references it cites were found in a registry or an index.

Towards the Development of Flexible Non‐Volatile Memories

Han, Su‐Ting, Zhou, Ye, Roy, V. A. L.·2013·Advanced Materials

Abstract

Flexible non‐volatile memories have attracted tremendous attentions for data storage for future electronics application. From device perspective, the advantages of flexible memory devices include thin, lightweight, printable, foldable and stretchable. The flash memories, resistive random access memories (RRAM) and ferroelectric random access memory/ferroelectric field‐effect transistor memories (FeRAM/FeFET) are considered as promising candidates for next generation non‐volatile memory device. Here, we review the general background knowledge on device structure, working principle, materials, challenges and recent progress with the emphasis on the flexibility of above three categories of non‐volatile memories.

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Metadata

Authors
Han, S., Zhou, Y., & Roy, V. A. L.
Venue
Advanced Materials
Publisher
Wiley
Published
2013-08-22
Volume
25
Issue
38
Pages
5425-5449
ISSN
  • 0935-9648 (ISSN-L)
  • 1521-4095
OpenAlex
W1988281217
Cited by
555
References
12
FWCI
25.96
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Towards the Development of Flexible Non‐Volatile Memories. https://app.cochat.ai/papers/10.1002/adma.201301361
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Han, S., Zhou, Y., & Roy, V. A. L. (2013). Towards the Development of Flexible Non‐Volatile Memories. Advanced Materials. https://doi.org/10.1002/adma.201301361

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.