Electronic properties of two-dimensional systems
Abstract
The electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed. Energy levels, transport properties, and optical properties are considered in some detail, especially for electrons at the (100) silicon-silicon dioxide interface. Other systems are discussed more briefly.
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Despite extensive transport experiments on bulk Bi2Se3 since the 1970's, there has been no report of a conducting surface layer, and the predicted topological features have not been addressed.
“However, despite extensive transport experiments on bulk Bi 2 Se 3 since the 1970's [19], there has been no report of a conducting surface layer, and the predicted topological features have not been addressed.”
From Aharonov–Bohm interference in topological insulator nanoribbons (2010) · cites this paper as [19]
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Electrodynamics of a layered electron gas. I. Single layer
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Quasiparticle lifetime in disordered two-dimensional metals
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Finite size scaling approach to Anderson localisation
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Self-citationEnergy, Specific Heat, and Magnetic Properties of the Low-Density Electron Gas
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Quantum Spectroscopy of the Low-Field Oscillations in the Surface Impedance
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The effects of electron-electron interaction on the properties of metals
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Indirect long-range oscillatory interaction between adsorbed atoms
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Selective Transmission of High-Frequency Phonons by a Superlattice: The "Dielectric" Phonon Filter
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Cyclotron Resonance in Uniaxially Stressed Silicon. II. Nature of the Covalent Bond
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The Excitonic State at the Semiconductor-Semimetal Transition
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Theory of Bound States in a Random Potential
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Transport Properties of Electrons in Inverted Silicon Surfaces
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Self-citationQuantized Hall resistance and the measurement of the fine-structure constant
Prange, R. E. (1981) · Physical review. B, Condensed matter · doi:10.1103/physrevb.23.4802 · Cited by 333 · see citing works
Ordering in strongly fluctuating condensed matter systems
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Nonmetallic Conduction in Thin Metal Films at Low Temperatures
Dolan, G. J., & Osheroff, D. D. (1979) · Physical Review Letters · doi:10.1103/physrevlett.43.721 · Cited by 329 · see citing works
Flux-lattice melting in thin-film superconductors
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Simplified Theory of Electron Correlations in Metals
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Ando, T. (1974) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.37.1233 · Cited by 317 · see citing works
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Collective modes of spatially separated, two-component, two-dimensional plasma in solids
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Electronic Processes in Zinc Oxide
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Weisbuch, C., Miller, R. C., Dingle, R., et al. (1981) · Solid State Communications · doi:10.1016/0038-1098(81)91017-6 · Cited by 306 · see citing works
Impurity and phonon scattering in layered structures
Hess, K. (1979) · Applied Physics Letters · doi:10.1063/1.91205 · Cited by 305 · see citing works
Luminescence studies of optically pumped quantum wells in GaAs- AlxGa1−xAs multilayer structures
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On the absorption of infrared radiation by electrons in semiconductor inversion layers
Allen, S. J., Tsui, D. C., & Vinter, B. (1976) · Solid State Communications · doi:10.1016/0038-1098(76)90541-x · Cited by 301 · see citing works
Many-body corrections to the polarizability of the two-dimensional electron gas
Maldague, P. F. (1978) · Surface Science · doi:10.1016/0039-6028(78)90507-1 · Cited by 301 · see citing works
Theory of Hall Effect in a Two-Dimensional Electron System
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Self-citationNonmetallic Conduction in Electron Inversion Layers at Low Temperatures
Bishop, D. J., Tsui, D. C., & Dynes, R. C. (1980) · Physical Review Letters · doi:10.1103/physrevlett.44.1153 · Cited by 298 · see citing works
The TFT A New Thin-Film Transistor
Weimer, P. (1962) · Proceedings of the IRE · doi:10.1109/jrproc.1962.288190 · Cited by 298 · see citing works
Electron correlations in inversion layers
Jonson, M. (1976) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/9/16/012 · Cited by 292 · see citing works
InAs-GaSb superlattice energy structure and its semiconductor-semimetal transition
Sai-Halasz, G. A., Esaki, L., & Harrison, W. A. (1978) · Physical review. B, Condensed matter · doi:10.1103/physrevb.18.2812 · Cited by 282 · see citing works
Zero-Point Energy of an Electron Lattice
Coldwell-Horsfall, R. A., & Maradudin, A. A. (1960) · Journal of Mathematical Physics · doi:10.1063/1.1703670 · Cited by 282 · see citing works
Mobility Anisotropy of Electrons in Inversion Layers on Oxidized Silicon Surfaces
Satô, T., Takeishi, Y., Hara, H., et al. (1971) · Physical review. B, Solid state · doi:10.1103/physrevb.4.1950 · Cited by 282 · see citing works
Study of zone-folding effects on phonons in alternating monolayers of GaAs-AlAs
Barker, A. S., Merz, J. L., & Gossard, A. C. (1978) · Physical review. B, Condensed matter · doi:10.1103/physrevb.17.3181 · Cited by 279 · see citing works
Electronic Properties of Flat-Band Semiconductor Heterostructures
White, S. R., & Sham, L. J. (1981) · Physical Review Letters · doi:10.1103/physrevlett.47.879 · Cited by 276 · see citing works
Calculated Temperature Dependence of Mobility in Silicon Inversion Layers
Stern, F. (1980) · Physical Review Letters · doi:10.1103/physrevlett.44.1469 · Cited by 275 · see citing works
Self-citationCyclotron Resonance Experiments in Silicon and Germanium
Dexter, R. N., Zeiger, H. J., & Lax, B. (1956) · Physical Review · doi:10.1103/physrev.104.637 · Cited by 275 · see citing works
Modulation of Conductance of Thin Films of Semi-Conductors by Surface Charges
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Density-functional calculation of sub-band structure in accumulation and inversion layers
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Self-citationConductivity of the disordered linear chain
Thouless, D. J., & Kirkpatrick, S. (1981) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/14/3/007 · Cited by 267 · see citing works
On the dynamics of electrons in an impure metal
Schmid, A. (1974) · The European Physical Journal A · doi:10.1007/bf01677931 · Cited by 267 · see citing works
On the Number of Bound States in a Central Field of Force
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Quantum Theory of Galvanomagnetic Effect at Extremely Strong Magnetic Fields
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Scattering of Conduction Electrons by Lattice Vibrations in Silicon
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An Auger analysis of the SiO2-Si interface
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Monte Carlo simulation of the classical two-dimensional one-component plasma
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Molecular processes on solid surfaces
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Theory of Cyclotron Resonance Lineshape in a Two-Dimensional Electron System
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Self-citationCondensation of excitons in germanium and silicon
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Hopping conduction in a "superlattice"
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Topological Excitations in Two-Dimensional Superconductors
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Superconductivity in Many-Valley Semiconductors and in Semimetals
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Phonon-Ripplon Coupling and the Two-Dimensional Electron Solid on a Liquid-Helium Surface
Fisher, D. S., Halperin, B. I., & Platzman, P. M. (1979) · Physical Review Letters · doi:10.1103/physrevlett.42.798 · Cited by 244 · see citing works
Dielectric Screening Model for Lattice Vibrations of Diamond-Structure Crystals
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Electronic surface states of liquid helium
Cole, M. W. (1974) · Reviews of Modern Physics · doi:10.1103/revmodphys.46.451 · Cited by 243 · see citing works
Temperature Dependence of the Shear Modulus and Melting of the Two-Dimensional Electron Solid
Morf, R. (1979) · Physical Review Letters · doi:10.1103/physrevlett.43.931 · Cited by 240 · see citing works
Dielectric Screening in a Layered Electron Gas
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Plasma oscillations of a two-dimensional electron gas in a strong magnetic field
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Two-dimensional electron gas in a strong magnetic field
Fukuyama, H., Platzman, P. M., & Anderson, P. W. (1979) · Physical review. B, Condensed matter · doi:10.1103/physrevb.19.5211 · Cited by 236 · see citing works
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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374 · see citing works
Detection of individual gas molecules adsorbed on graphene
Schedin, F., Geim, A. K., Morozov, S. V., Hill, E. W., Blake, P., Katsnelson, M. I., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1967 · Cited by 8,028 · see citing works
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
Bychkov, Y. A., & Rashba, E. I. (1984) · Journal of Physics C: Solid State Physics · doi:10.1088/0022-3719/17/33/015 · Cited by 2,972 · see citing works
Aharonov–Bohm interference in topological insulator nanoribbons
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The fractional quantum Hall effect
Stormer, H. L., Tsui, D. C., & Gossard, A. C. (1999) · Reviews of Modern Physics · doi:10.1103/revmodphys.71.s298 · Cited by 483 · see citing works
Single-particle relaxation time versus scattering time in an impure electron gas
Das Sarma, S., & Stern, F. (1985) · Physical Review B · doi:10.1103/physrevb.32.8442 · Cited by 380 · see citing works
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Single-particle relaxation time versus transport scattering time in a two-dimensional graphene layer
Hwang, E. H., & Das Sarma, S. (2008) · Physical Review B · doi:10.1103/physrevb.77.195412 · Cited by 206 · see citing works
Spin splitting of subband energies due to inversion asymmetry in semiconductor heterostructures
Zawadzki, W., & Pfeffer, P. (2004) · Semiconductor Science and Technology · doi:10.1088/0268-1242/19/1/r01 · Cited by 172 · see citing works
Magnetization of a two-dimensional electron gas
Shoenberg, D. (1984) · Journal of Low Temperature Physics · doi:10.1007/bf00681804 · Cited by 99 · see citing works
Thermoelectric quantum oscillations in ZrSiS
Matusiak, M., Cooper, J. R., & Kaczorowski, D. (2017) · Nature Communications · doi:10.1038/ncomms15219 · Cited by 89 · see citing works
Practical strategies for enhancing the valley splitting in Si/SiGe quantum wells
Losert, M. P., Eriksson, M. A., Joynt, R., Rahman, R., Scappucci, G., Coppersmith, S. N., & Friesen, M. (2023) · Physical Review B · doi:10.1103/physrevb.108.125405 · Cited by 60 · see citing works
Metamorphic materials for quantum computing
Deelman, P. W., Edge, L. F., & Jackson, C. A. (2016) · MRS Bulletin · doi:10.1557/mrs.2016.28 · Cited by 18 · see citing works
A planar Penning trap with tunable dimensionality of the trapping potential
Pinder, J., & Verdú, J. (2013) · International Journal of Mass Spectrometry · doi:10.1016/j.ijms.2013.10.003 · Cited by 11 · see citing works
- Authors
- Ando, T., Fowler, A. B., & Stern, F.
- Affiliations
- University of Tsukuba (JP)
- Venue
- Reviews of Modern Physics
- Publisher
- American Physical Society (APS)
- Published
- 1982-04-01
- Volume
- 54
- Issue
- 2
- Pages
- 437-672
- ISSN
- 0034-6861 (ISSN-L)
- OpenAlex
- W2043365391
- Cited by
- 7,455
- References
- 1,635
- Citations by year
- 2026: 110 · 2025: 100 · 2024: 119 · 2023: 112 · 2022: 114 · 2021: 127 · 2020: 164 · 2019: 152 · 2018: 141 · 2017: 158 · 2016: 152 · 2015: 174 · 2014: 178 · 2013: 206 · 2012: 184
- FWCI
- 108.29
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Reviews of Modern Physics (publishedVersion)
- Topics
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Quantum and electron transport phenomena
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Surface and Thin Film Phenomena
- Keywords
- two-dimensional electron systems, inversion layer, accumulation layer, semiconductor-insulator interface, Si/SiO2 interface, semiconductor heterojunctions, semiconductor superlattices, energy levels, electron transport, optical properties
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