Active Matrix Electronic Skin Strain Sensor Based on Piezopotential‐Powered Graphene Transistors

The active matrix strain sensor was able to detect a small strain range (up to 0.3%) with a high gauge factor of 389 and an extremely low strain detection limit of 0.008%.

“The active matrix strain sensor was able to detect a small strain range (up to 0.3%) with a high GF of 389 and an extremely low strain detection limit of 0.008%.”

Various piezoelectric materials such as ZnO nanostructures, PVDF-TrFE, and PLA have been used to develop wearable strain sensors.

“Various piezoelectric materials such as ZnO nanostructures, [40,132,133] poly(vinylidenefluoride-co-trifluoroethylene) (PVDF-TrFE) [134] and polylactic acid (PLA) [22] have been used to develop wearable strain sensors.”

Active matrix strain sensors reported by Cho et al. used piezopotential generated by a piezoelectric PVDF-TrFE nanogenerator in response to external strain to gate a graphene transistor based active matrix.

“Active matrix strain sensors were reported by Cho et al., where the piezopotential generated by a piezoelectric PVDF-TrFE nanogenerator in response to external strain was used to gate the graphene transistor based active matrix (Figure 4e).[134]”

Each pixel is actively controlled by a transistor, realizing mapping of external stimuli with low crosstalk between adjacent signals.

“Each pixel is actively controlled by a transistor, realizing mapping of external stimuli with low crosstalk between adjacent signals.[30,84,85,134]”

An active matrix electronic skin consisting of strain sensors based on piezopotential-gated graphene transistors was able to capture the spatial distribution of strain.

“For example, as shown in Figure 11b, an active matrix electronic skin consisting of strain sensors based on piezopotential-gated graphene transistors was able to capture the spatial distribution of strain.[134]”