The DOI matches its Crossref record; 30 of the 30 references it cites were found in a registry or an index.
Black Arsenic–Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties
Abstract
New layered anisotropic infrared semiconductors, black arsenic-phosphorus (b-AsP), with highly tunable chemical compositions and electronic and optical properties are introduced. Transport and infrared absorption studies demonstrate the semiconducting nature of b-AsP with tunable bandgaps, ranging from 0.3 to 0.15 eV. These bandgaps fall into the long-wavelength infrared regime and cannot be readily reached by other layered materials.
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Cites
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Cited by
Zeng, M., Xiao, Y., Liu, J., Yang, K., & Fu, L. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00633 · Cited by 574
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2D V‐V Binary Materials: Status and Challenges
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Black phosphorus and its isoelectronic materials
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Metadata
- Authors
- Liu, B., Köpf, M., Abbas, A. N., Wang, X., Guo, Q., Jia, Y., Xia, F., Weihrich, R., Bachhuber, F., Pielnhofer, F., Wang, H., Dhall, R., Cronin, S. B., Ge, M., Fang, X., Nilges, T., & Zhou, C.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2015-06-25
- Volume
- 27
- Issue
- 30
- Pages
- 4423-4429
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W1848417582
- Cited by
- 473
- References
- 30
- FWCI
- 14.52
- Type
- journal article
- Language
- en
- Open access
- closed
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- The paper
- Liu, B., Köpf, M., Abbas, A. N., Wang, X., Guo, Q., Jia, Y., Xia, F., Weihrich, R., Bachhuber, F., Pielnhofer, F., Wang, H., Dhall, R., Cronin, S. B., Ge, M., Fang, X., Nilges, T., & Zhou, C. (2015). Black Arsenic–Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties. Advanced Materials. https://doi.org/10.1002/adma.201501758
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