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Black phosphorus field-effect transistors
Open accessAbstract
Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor performance is achieved at room temperature in samples thinner than 7.5 nm, with drain current modulation on the order of 10(5) and well-developed current saturation in the I-V characteristics. The charge-carrier mobility is found to be thickness-dependent, with the highest values up to ∼ 1,000 cm(2) V(-1) s(-1) obtained for a thickness of ∼ 10 nm. Our results demonstrate the potential of black phosphorus thin crystals as a new two-dimensional material for applications in nanoelectronic devices.
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Self-citationPhysics of Semiconductor Devices
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Cited by
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Suen, N.-T., Hung, S.-F., Quan, Q., Zhang, N., Xu, Y.-J., & Chen, H. M. (2017) · Chemical Society Reviews · doi:10.1039/c6cs00328a · Cited by 6,307
Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides
Mak, K. F., & Shan, J. (2016) · Nature Photonics · doi:10.1038/nphoton.2015.282 · Cited by 3,819
Recent development of two-dimensional transition metal dichalcogenides and their applications
Choi, W., Choudhary, N., Han, G. H., Park, J., Akinwande, D., & Lee, Y. H. (2017) · Materials Today · doi:10.1016/j.mattod.2016.10.002 · Cited by 2,769
Polaritons in layered two-dimensional materials
Low, T., Chaves, A., Caldwell, J. D., Kumar, A., Fang, N. X., Avouris, P., Heinz, T. F., Guinea, F., Martin-Moreno, L., & Koppens, F. (2017) · Nature Materials · doi:10.1038/nmat4792 · Cited by 1,317
Photocurrent generation with two-dimensional van der Waals semiconductors
Buscema, M., Island, J. O., Groenendijk, D. J., Blanter, S. I., Steele, G. A., van der Zant, H. S. J., & Castellanos-Gomez, A. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00106d · Cited by 1,051
Metadata
- Authors
- Li, L., Yu, Y., Ye, G. J., Ge, Q., Ou, X., Wu, H., Feng, D., Chen, X. H., & Zhang, Y.
- Venue
- Nature Nanotechnology
- Published
- 2014-03-02
- Volume
- 9
- Issue
- 5
- Pages
- 372-377
- ISSN
- 1748-3387 (ISSN-L)
- 1748-3395
- OpenAlex
- W2041311241
- Cited by
- 8,413
- References
- 6
- FWCI
- 327.15
- Type
- journal article
- Language
- en
- Open access
- green
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- Li, L., Yu, Y., Ye, G. J., Ge, Q., Ou, X., Wu, H., Feng, D., Chen, X. H., & Zhang, Y. (2014). Black phosphorus field-effect transistors. Nature Nanotechnology. https://doi.org/10.1038/nnano.2014.35
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
