The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Lateral Built‐In Potential of Monolayer MoS2–WS2 In‐Plane Heterostructures by a Shortcut Growth Strategy
Abstract
Lateral WS2-MoS2 heterostructures are synthesized by a shortcut one-step growth recipe with low-cost and soluble salts. The 2D spatial distributions of the built-in potential and the related electric field of the lateral WS2-MoS2 heterostructure are quantitatively analyzed by scanning Kelvin probe force microscopy revealing the fundamental attributes of the lateral heterostructure devices.
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Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics
Wu, W., Wang, L., Li, Y., Zhang, F., Lin, L., Niu, S., Chenet, D., Zhang, X., Hao, Y., Heinz, T. F., et al. (2014) · Nature · doi:10.1038/nature13792 · Cited by 2,287
Cited by
Li, C., Cao, Q., Wang, F., Xiao, Y., Li, Y., Delaunay, J.-J., & Zhu, H. (2018) · Chemical Society Reviews · doi:10.1039/c8cs00067k · Cited by 494
Ultrathin Two‐Dimensional Multinary Layered Metal Chalcogenide Nanomaterials
Tan, C., Lai, Z., & Zhang, H. (2017) · Advanced Materials · doi:10.1002/adma.201701392 · Cited by 304
Optimized Metal Chalcogenides for Boosting Water Splitting
Yin, J., Jin, J., Lin, H., Yin, Z., Li, J., Lu, M., Guo, L., Xi, P., Tang, Y., & Yan, C. (2020) · Advanced Science · doi:10.1002/advs.201903070 · Cited by 292
Zhang, T., Fujisawa, K., Zhang, F., Liu, M., Lucking, M. C., Gontijo, R. N., Lei, Y., Liu, H., Crust, K., Granzier-Nakajima, T., et al. (2020) · ACS Nano · doi:10.1021/acsnano.9b09857 · Cited by 172
Yuan, J., Sun, T., Hu, Z., Yu, W., Ma, W., Zhang, K., Sun, B., Lau, S. P., Bao, Q., Lin, S., et al. (2018) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.8b13620 · Cited by 152
Metadata
- Authors
- Chen, K., Wan, X., Xie, W., Wen, J., Kang, Z., Zeng, X., Chen, H., & Xu, J.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2015-09-23
- Volume
- 27
- Issue
- 41
- Pages
- 6431-6437
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2138724625
- Cited by
- 236
- References
- 2
- FWCI
- 10.13
- Type
- journal article
- Language
- en
- Open access
- closed
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- Chen, K., Wan, X., Xie, W., Wen, J., Kang, Z., Zeng, X., Chen, H., & Xu, J. (2015). Lateral Built‐In Potential of Monolayer MoS2–WS2 In‐Plane Heterostructures by a Shortcut Growth Strategy. Advanced Materials. https://doi.org/10.1002/adma.201502375
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