The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Tellurium‐Assisted Epitaxial Growth of Large‐Area, Highly Crystalline ReS2 Atomic Layers on Mica Substrate
Abstract
Anisotropic 2D layered material rhenium disulfide (ReS2 ) with high crystal quality and uniform monolayer thickness is synthesized by using tellurium-assisted epitaxial growth on mica substrate. Benefit from the lower eutectic temperature of rhenium-tellurium binary eutectic, ReS2 can grow from rhenium (melting point at 3180 °C) and sulfur precursors in the temperature range of 460-900 °C with high efficiency.
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Citations
Cites
Spin and pseudospins in layered transition metal dichalcogenides
Xu, X., Yao, W., Xiao, D., & Heinz, T. F. (2014) · Nature Physics · doi:10.1038/nphys2942 · Cited by 2,855
Layer-Dependent Electrocatalysis of MoS2 for Hydrogen Evolution
Yu, Y., Huang, S.-Y., Li, Y., Steinmann, S. N., Yang, W., & Cao, L. (2014) · Nano Letters · doi:10.1021/nl403620g · Cited by 740
Cited by
Emerging in‐plane anisotropic two‐dimensional materials
Li, L., Han, W., Pi, L., Niu, P., Han, J., Wang, C., Su, B., Li, H., Xiong, J., Bando, Y., et al. (2019) · InfoMat · doi:10.1002/inf2.12005 · Cited by 382
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Metadata
- Authors
- Cui, F., Wang, C., Li, X., Wang, G., Liu, K., Yang, Z., Feng, Q., Liang, X., Zhang, Z., Liu, S., Lei, Z., Liu, Z., Xu, H., & Zhang, J.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2016-04-28
- Volume
- 28
- Issue
- 25
- Pages
- 5019-5024
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2343977560
- Cited by
- 198
- References
- 2
- FWCI
- 13.10
- Type
- journal article
- Language
- en
- Open access
- closed
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- Cui, F., Wang, C., Li, X., Wang, G., Liu, K., Yang, Z., Feng, Q., Liang, X., Zhang, Z., Liu, S., Lei, Z., Liu, Z., Xu, H., & Zhang, J. (2016). Tellurium‐Assisted Epitaxial Growth of Large‐Area, Highly Crystalline ReS2 Atomic Layers on Mica Substrate. Advanced Materials. https://doi.org/10.1002/adma.201600722
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