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Probing Anisotropic Thermal Conductivity of Transition Metal Dichalcogenides MX2 (M = Mo, W and X = S, Se) using Time‐Domain Thermoreflectance
Abstract
Transition metal dichalcogenides (TMDs) are a group of layered 2D semiconductors that have shown many intriguing electrical and optical properties. However, the thermal transport properties in TMDs are not well understood due to the challenges in characterizing anisotropic thermal conductivity. Here, a variable‐spot‐size time‐domain thermoreflectance approach is developed to simultaneously measure both the in‐plane and the through‐plane thermal conductivity of four kinds of layered TMDs (MoS 2, WS 2, MoSe 2, and WSe 2) over a wide temperature range, 80–300 K. Interestingly, it is found that both the through‐plane thermal conductivity and the Al/TMD interface conductance depend on the modulation frequency of the pump beam for all these four compounds. The frequency‐dependent thermal properties are attributed to the nonequilibrium thermal resistance between the different groups of phonons in the substrate. A two‐channel thermal model is used to analyze the nonequilibrium phonon transport and to derive the intrinsic thermal conductivity at the thermal equilibrium limit. The measurements of the thermal conductivities of bulk TMDs serve as an important benchmark for understanding the thermal conductivity of single‐ and few‐layer TMDs.
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“This method has then been successfully applied in several studies of anisotropic materials including both layered two-dimensional materials (such as transition metal dichalcogenides 35 and their alloys 192 and boron nitride nanosheets 193 ) and bulk crystals (such as silicon carbide 33 ).”
From Tutorial: Time-domain thermoreflectance (TDTR) for thermal property characterization of bulk and thin film materials (2018) · cites this paper as [35]
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Tang, J., Li, Y., Wang, J., Zhu, Y., Li, X., Jiang, P., Xiao, J., Zhang, Y., Liu, Q., Deng, M., et al. (2025) · Nanoscale · doi:10.1039/d5nr00839e · Cited by 2
Self-citationElectrochemical Metallization Memristors: From Bulk to 2D Materials
Lopes, V., Bae, Y., Araújo, G., Schulman, A., Abreu, T., & Capasso, A. (2026) · Advanced Functional Materials · doi:10.1002/adfm.76117 · Cited by 2
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Metadata
- Authors
- Jiang, P., Qian, X., Gu, X., & Yang, R.
- Affiliations
- University of Colorado Boulder (US)
- Shanghai Jiao Tong University (CN)
- Corresponding author
- Yang, Ronggui
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2017-07-20
- Volume
- 29
- Issue
- 36
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2736994172
- Cited by
- 239
- References
- 60
- Citations by year
- 2026: 20 · 2025: 32 · 2024: 26 · 2023: 33 · 2022: 30 · 2021: 22 · 2020: 33 · 2019: 22 · 2018: 18 · 2017: 3
- FWCI
- 8.78
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- Advanced Materials (publishedVersion)
- PubMed (publishedVersion)
- Funders
- National Science Foundation (0846561, 1512776)
- Defense Advanced Research Projects Agency (FA8650‐15‐1‐7524)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Thermal properties of materials
- Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
- Physical Sciences › Engineering › Mechanics of Materials › Thermography and Photoacoustic Techniques
- Keywords
- transition metal dichalcogenides, anisotropic thermal conductivity, time-domain thermoreflectance, through-plane thermal conductivity, in-plane thermal conductivity, MoS2, tungsten disulfide, MoSe2, WSe2
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