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PreprintCited by 2Thermal properties of materialsThermoelastic and Magnetoelastic PhenomenaThermography and Photoacoustic Techniques

Boundary conditions dictate frequency dependence of thermal conductivity in silicon

Open access
Liu, Yizhe, Li, Qinshu, Liu, Fang, Wang, Xinqiang, Sun, Bo·2024·arXiv
DOI 10.48550/arxiv.2412.02227arXiv 2412.02227
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Abstract

Non-Fourier thermal transports have drawn significant attention for decades. Among them, the frequency dependent thermal conductivity has been extensively explored by pump-probe techniques, such as time-domain thermoreflectance, which is employed to probe the spectra of phonon mean free paths. However, previous studies on silicon have not exhibited apparent frequency dependence despite its broad phonon distribution. Here, we report the frequency dependent thermal transport in Al/Si with an atomically sharp interface, where the matched Debye temperatures preserve non-equilibrium between low- and high-energy phonons in Si. The dependence vanishes in Al/SiO$_2$/Si at room temperature, since the SiO$_2$ interlayer facilitates phonon scattering and destroys thermal non-equilibrium. At 80 K, frequency dependence reemerges in Al/SiO$_2$/Si, due to reduced interfacial phonon scattering. Our findings highlight the significance of boundary conditions in frequency dependent thermal conductivity.

AI snapshot

Written from the paper’s full text.

TL;DR

Frequency-dependent thermal conductivity in Si is governed by the transducer/sample boundary condition: an atomically sharp Al/Si interface preserves phonon nonequilibrium and produces strong frequency dependence, while a diffuse Al/SiO₂/Si interface suppresses it at room temperature. The dependence reemerges at 80 K even with the SiO₂ interlayer because interfacial phonon scattering is reduced.

Key findings

  • In Al/Si with an atomically sharp interface at room temperature, apparent Si thermal conductivity Λ decreases from 135 W m⁻¹ K⁻¹ at 0.47 MHz to 106 W m⁻¹ K⁻¹ at 10.1 MHz, while interfacial conductance G increases from 302 to 385 MW m⁻² K⁻¹.
  • In Al/SiO₂/Si at room temperature, no apparent frequency dependence is observed: Λ ranges from 129 to 136 W m⁻¹ K⁻¹ and G from 80.1 to 82.2 MW m⁻² K⁻¹.
  • At 80 K, frequency dependence appears in both samples, with Λ variation of 26.2% in Al/Si and 18.1% in Al/SiO₂/Si; maximum measured Λ is 745 W m⁻¹ K⁻¹ for Al/Si and 890 W m⁻¹ K⁻¹ for Al/SiO₂/Si, both below steady-state reference values.
  • Two-channel fits for Al/Si give at room temperature Λ₁ = 66, Λ₂ = 75 W m⁻¹ K⁻¹, G₁ = 58, G₂ = 400 MW m⁻² K⁻¹, g = 1.2 × 10¹⁴ W m⁻³ K⁻¹; at 80 K, Λ₁ = 630, Λ₂ = 320 W m⁻¹ K⁻¹, G₁ = 22, G₂ = 162 MW m⁻² K⁻¹, g = 5 × 10¹² W m⁻³ K⁻¹.

Methods

  • Two samples were compared: Al/Si with an atomically sharp Al(111)/Si(111) interface grown by molecular beam epitaxy (Al thickness 138 nm), and Al/SiO₂/Si with a native oxide interlayer and sputtered Al (Al thickness 70 nm).
  • Thermal transport was measured by time-domain thermoreflectance (TDTR) using a 785 nm, 80 MHz femtosecond laser, pump modulation from 0.47 to 10.1 MHz, probe modulation at 200 Hz, and a 1/e² beam radius of 30 µm.
  • Data were fitted first with a one-channel stratified thermal model assuming local equilibrium, then with a two-channel model treating low-energy (<3 THz) and high-energy (>3 THz) phonons separately with coupling factor g.

Limitations

  • The paper states that the two-channel coupling factor g has large uncertainty due to low sensitivity: ±28.8% at room temperature and ±47.5% at 80 K; one-channel uncertainties are <±4.5% for Λ and G at room temperature, with Λ <±8.3% and G up to ±5.2% at 80 K.
  • The paper states that at 80 K the total measured Λ is lower than previously reported Si values, probably because in-plane thermal conductivity is suppressed by a not-large-enough laser spot size; it also notes that high-frequency phonons above 10 THz in Si cannot be accurately probed due to mismatched Al/Si phonon DOS, and that the diffuse Al/SiO₂/Si interface limits extraction of intrinsic spectral phonon mean free paths.
  • Evident from the text: the recommendation that Al is a better transducer than Ta for measuring Si phonon mean free paths is explicitly postulated rather than tested in this work.

Model-written summary. Check it against the paper before relying on it.

Integrity signals

Registry

DataCite · 10.48550/arxiv.2412.02227

Cites

42 of 42 references verified0 citation errors · 0 not checkable

Statistics

Nothing to recompute.

Claims the paper makes

0 of 27 cited sources checked · 0 supported · 0 flagged

  • Findingown data

    In TDTR measurements on Al/Si with an atomically sharp interface, thermal transport exhibits pronounced frequency dependence.

    “Here, we report the frequency dependent thermal transport in Al/Si with an atomically sharp interface”
    • Also stated in: § I. INTRODUCTION · boosted
      “In this work, we discover a pronounced frequency dependent thermal transport in TDTR measurements on Al/Si with an atomically sharp interface.”
    • Also stated in: § A. Frequency dependence at room temperature · plain
      “In the Al/Si sample with Boundary 1, Λ exhibits a pronounced frequency dependence”
    Quote in the paperSubstantial claim
  • Findingown data

    In the Al/Si sample at room temperature, G of the Al/Si interface increases with rising frequency, from a minimum of 302 MW m−2 K−1 at 0.47 MHz to a maximum of 385 MW m−2 K−1 at 10.1 MHz.

    “Meanwhile, G increases with rising f, reaching a maximum value of 385 MW m -2 K -1 at 10.1 MHz and a minimum value of 302 MW m -2 K -1 at 0.47 MHz.”
    Quote in the paperSubstantial claim
  • Findingown data

    The two-channel model fits the acquired TDTR signals across the entire frequency range using one set of parameters (Λ1, Λ2, G1, G2, and g), independent of modulation frequency.

    “Acquired TDTR signals can be well fit for the entire frequency range, using a set of thermal conductivity contributed by Channel 1 (Λ 1 ) and Channel 2 (Λ 2 ), interfacial thermal conductance from Channel 1 (G 1 ) and Channel 2 (G 2 ), and g.”
    • Also stated in: § 2.2. TDTR data fitting · hedged
      “Using the two-channel model, TDTR signals acquired from the Al/Si sample across the entire frequency range could be excellently fitted with one set of parameters (Λ 1 , Λ 2 , G 1 , G 2 , and g), independent of modulation frequency.”
    Quote in the paperSubstantial claim
    • The authors state this as an assumption: The two-channel model divides phonons into low-energy (<3 THz, Channel 1) and high-energy (>3 THz, Channel 2) channels with a coupling factor g between them.
  • Findingcitation

    The total thermal conductivity Λ1 + Λ2 = 141 W m^-1 K^-1 at room temperature aligns well with previously reported values.

    “The total thermal conductivity Λ 1 + Λ 2 = 141 W m -1 K -1 aligns well with previously reported value [18,26,32].”
    Quote in the paperNot a substantial claim0 of 3 sources checked
    • cites [18]

      Couldn’t be matched to a paper in Crossref, so it can’t be checked.

    • cites [26]

      Couldn’t be matched to a paper in Crossref, so it can’t be checked.

    • cites [32]

      Couldn’t be matched to a paper in Crossref, so it can’t be checked.

    • The authors state this as an assumption: The two-channel model divides phonons into low-energy (<3 THz, Channel 1) and high-energy (>3 THz, Channel 2) channels with a coupling factor g between them.
  • Findingreasoning

    For the Al/SiO2/Si sample, the calculated cumulative Λ with phonon MFP displays large deviations away from the first-principles calculation.

    “For the Al/SiO 2 Si sample, the calculated cumulative Λ with phonon MFP displays large derivations away from the first-principles calculation.”
    Quote in the paperSubstantial claim
  • May combine two claims. 32
  • Classified as probably not a substantial claim. 8
  • The quote only partly states this claim. 1

  • May combine two claims.

    Findingown data

    In the Al/SiO2/Si sample at room temperature, measured Λ ranges from 129 to 136 W m−1 K−1 and G varies from 80.1 to 82.2 MW m−2 K−1, with no apparent frequency dependence within experimental uncertainty.

    “In this sample, the measured Λ ranges from 129 W m -1 K -1 to 136 W m -1 K -1 at varying frequencies, while G varies from 80.1 MW m -2 K -1 to 82.2 MW m -2 K -1 , demonstrating no apparent frequency dependence within experimental uncertainty.”
    Quote in the paperSubstantial claim

  • May combine two claims.

    Findingown data

    The one-channel model with a single set of parameters (Λ=135 W m−1 K−1 and G=302 MW m−2 K−1) fits the TDTR data at 0.47 MHz well but overestimates data at higher frequencies beyond the error range.

    “Applying one set of parameters (Λ=135 W m -1 K -1 and G=302 MW m -2 K -1 ), the one-channel model fits well for data at 0.47 MHz but shows an obvious overestimation for data at higher frequencies, exceeding the error range.”
    Quote in the paperSubstantial claim

  • May combine two claims.

    Findingown data

    Our measurements on the Al/Si sample extract the spectrum of phonon MFPs in Si at room temperature and 80 K, in agreement with first-principles calculations.

    “our measurements on the Al/Si sample successfully extract the spectrum of phonon MFPs in Si at RT and 80 K, in agreement with first-principles calculations.”
    • Also stated in: § C. Cumulative thermal conductivity with phonon mean free path · boosted
      “For the Al/Si sample, our data exhibit remarkable agreement with the first-principles calculation by Esfarjani et al. [19] at RT.”
    Quote in the paperSubstantial claim0 of 1 sources checked
    • cites [19]

      Couldn’t be matched to a paper in Crossref, so it can’t be checked.

  • May combine two claims.

    Findingown data

    At room temperature, the two-channel model fit to Al/Si TDTR data yields Λ1 = 66 W m^-1 K^-1, Λ2 = 75 W m^-1 K^-1, G1 = 58 MW m^-2 K^-1, G2 = 400 MW m^-2 K^-1, and g = 1.2 × 10^14 W m^-3 K^-1.

    “Λ 1 = 66 W m -1 K -1 , Λ 2 = 75 W m -1 K -1 , G 1 = 58 MW m -2 K -1 , G 2 = 400 MW m -2 K -1”
    • Also stated in: § D. Two-channel model for non-equilibrium thermal transport · plain
      “and g = 1.2 × 10 14 W m -3 K -1 at RT.”
    Quote in the paperSubstantial claim
    • The authors state this as an assumption: The two-channel model divides phonons into low-energy (<3 THz, Channel 1) and high-energy (>3 THz, Channel 2) channels with a coupling factor g between them.

  • May combine two claims.

    Findingown data

    At 80 K, the measured maximum Λ in Al/Si (745 W m−1 K−1) is lower than in Al/SiO2/Si (890 W m−1 K−1), and both are smaller than the reference value measured by the steady-state method.

    “The measured maximum Λ in the Al/Si sample (745 W m -1 K -1 ) is lower than that in the Al/SiO 2 /Si sample (890 W m -1 K -1 ) while both were smaller than the reference value measured using the steady-state method.”
    Quote in the paperSubstantial claim

  • May combine two claims.

    Findingcitation

    At 80 K, our measurements align closely with first-principles results (interpolated from Minnich et al. at 100 K and 60 K), with a slight deviation for phonons with short MFPs.

    “At 80 K, our measurements align closely with first-principles results, calculated through interpolation of calculations by Minnich et al. at 100 K and 60 K [14], with a slight deviation for phonons with short MFPs.”
    Quote in the paperSubstantial claim0 of 1 sources checked
    • cites [14]

      Couldn’t be matched to a paper in Crossref, so it can’t be checked.

  • May combine two claims.

    Findingreasoning

    In the Al/Si sample at 80 K, frequency dependence is still observed, with a relatively larger variation of 26.2% in Λ compared to room temperature values.

    “In the Al/Si sample with Boundary 1, we still observed the frequency dependence, with a relatively larger variation of 26.2 % in Λ, compared to the RT values.”
    Quote in the paperSubstantial claim

  • May combine two claims.

    Findingown data

    In the Al/SiO2/Si sample at 80 K, frequency dependence is observed with a change of 18.1% in Λ, in sharp contrast to room temperature behavior.

    “Importantly, despite the presence of a SiO 2 interlayer in the Al/SiO 2 /Si sample, frequency dependence was observed at 80 K, with a change of 18.1 % in Λ, in sharp contrast to the room temperature behavior.”
    Quote in the paperSubstantial claim

  • May combine two claims.

    Findingown data

    The sensitivity to inplane thermal conductivity Λ// is negligible for both samples at room temperature while exhibiting a notable value for modulation frequencies lower than 4 MHz at 80 K.

    “The sensitivity to inplane thermal conductivity Λ // is negligible for both samples at RT while exhibiting a notable value for modulation frequencies lower than 4 MHz at 80 K.”
    Quote in the paperSubstantial claim
    • The authors state this as an assumption: In the one-channel model, all energy carriers are in thermal equilibrium and transport diffusively for the whole process.

  • Probably not a substantial claim: may not pass S3 (load-bearing). May combine two claims.

    Findingown data

    At 80 K, the uncertainty of interfacial thermal conductance shows a maximum value of ±5.2%, while that of thermal conductivity is less than ±8.3%.

    “At 80 K, the uncertainty of G shows a maximum value of ±5.2 %, while that of Λ is less than ±8.3 %.”
    Quote in the paperNot a substantial claim
    • The authors state this as an assumption: In the one-channel model, all energy carriers are in thermal equilibrium and transport diffusively for the whole process.

  • May combine two claims. The quote only partly states this claim.

    Findingown data

    At 80 K, the total thermal conductance is 184 MW m^-2 K^-1, confirming DMM predictions within the measurement uncertainty.

    “Besides, the total G = 184 MW m -2 K -1 confirms DMM predictions within the measurement uncertainty.”
    Quote in the paperNot a substantial claim
    • The authors state this as an assumption: The two-channel model divides phonons into low-energy (<3 THz, Channel 1) and high-energy (>3 THz, Channel 2) channels with a coupling factor g between them.

  • May combine two claims.

    Findingown data

    At 80 K, the two-channel model fit to Al/Si TDTR data yields Λ1 = 630 W m^-1 K^-1, Λ2 = 320 W m^-1 K^-1, G1 = 22 MW m^-2 K^-1, G2 = 162 MW m^-2 K^-1, and g = 5 × 10^12 W m^-3 K^-1.

    “Additionally, at 80 K, we obtained”
    • Also stated in: § D. Two-channel model for non-equilibrium thermal transport · plain
      “Λ 1 = 630 W m -1 K -1 , Λ 2 = 320 W m -1 K -1 , G 1 = 22 MW m -2 K -1 , G 2 = 162 MW m -2 K -1 , and g = 5 × 10 12 W m -3 K -1 .”
    Quote in the paperSubstantial claim
    • The authors state this as an assumption: The two-channel model divides phonons into low-energy (<3 THz, Channel 1) and high-energy (>3 THz, Channel 2) channels with a coupling factor g between them.

  • Probably not a substantial claim: may not pass S3 (load-bearing). May combine two claims.

    Findingown data

    The coupling factor g presents relatively low sensitivity, spanning all frequencies at both temperatures, suggesting a larger degree of uncertainty in the measurements.

    “Notably, g presents relatively low sensitivity, spanning all frequencies at both temperatures, suggesting a larger degree of uncertainty in our measurements.”
    Quote in the paperNot a substantial claim
    • The authors state this as an assumption: The two-channel model divides phonons into low-energy (<3 THz, Channel 1) and high-energy (>3 THz, Channel 2) channels with a coupling factor g between them.

  • May combine two claims.

    Findingreasoning

    The total thermal conductivity at 80 K is 950 W m^-1 K^-1, still lower than previously reported values in Si.

    “The total Λ of 950 W m -1 K -1 is still lower than previously reported values in Si”
    Quote in the paperNot a substantial claim
    • The authors state this as an assumption: The two-channel model divides phonons into low-energy (<3 THz, Channel 1) and high-energy (>3 THz, Channel 2) channels with a coupling factor g between them.

  • May combine two claims.

    Findingreasoning

    At 80 K, the partial thermal conductivity contributed by Channel 1 increases to 66.5%, consistent with the expectation that low-energy phonons play a more significant part in thermal conductivity at lower temperatures.

    “The partial Λ contributed by Channel 1 increases to 66.5 %, which is consistent with the expectation that low-energy phonons play a more significant part in Λ at lower temperatures.”
    Quote in the paperSubstantial claim
    • The authors state this as an assumption: The two-channel model divides phonons into low-energy (<3 THz, Channel 1) and high-energy (>3 THz, Channel 2) channels with a coupling factor g between them.

  • May combine two claims.

    Findingcitation

    At room temperature, low-frequency phonons in Channel 1 contribute 46.8% of the total thermal conductivity while high-frequency phonons contribute 53.2%, consistent with theoretical predictions.

    “Low-frequency phonons in Channel 1 contribute 46.8 % of the total Λ while high-frequency phonons contribute 53.2 %, consistent with theoretical predictions [33].”
    Quote in the paperNot a substantial claim0 of 1 sources checked
    • cites [33]

      Couldn’t be matched to a paper in Crossref, so it can’t be checked.

    • The authors state this as an assumption: The two-channel model divides phonons into low-energy (<3 THz, Channel 1) and high-energy (>3 THz, Channel 2) channels with a coupling factor g between them.

  • May combine two claims.

    Findingown data

    G2 shows significant sensitivity for all frequencies, while G1 exhibits sensitivity only at frequencies higher than 1 MHz.

    “G 2 show significant sensitivity for all frequencies, while G 1 exhibitsonly at frequencies higher than 1 MHz.”
    Quote in the paperNot a substantial claim
    • The authors state this as an assumption: The two-channel model divides phonons into low-energy (<3 THz, Channel 1) and high-energy (>3 THz, Channel 2) channels with a coupling factor g between them.

  • May combine two claims.

    Interpretationreasoning

    Not only an atomically sharp interface but also a metal transducer with a matched or larger Debye temperature is required to accurately probe spectral phonon MFPs.

    “Specifically, not only an atomically sharp interface but also a metal transducer with a matched or larger Debye temperature is required.”
    Quote in the paperSubstantial claim

  • May combine two claims.

    Interpretationreasoning

    The value of G is not a decisive factor in mediating frequency dependent thermal transport; a sharp interface with appropriate phonon spectra of constituent materials constitutes the proper boundary conditions.

    “Hence, the value of G is not a decisive factor in mediating frequency dependent thermal transport, while a sharp interface with appropriate phonon spectra of constituent materials consists of the proper boundary conditions.”
    Quote in the paperSubstantial claim

  • Classified as probably not a substantial claim. May combine two claims.

    Premisecitation

    The measured in-plane thermal conductivity shows a pronounced reduction when the temperature profile length falls below the phonon MFPs, leading to spot-size dependence in TDTR measurements.

    “Previous studies have pointed that the measured inplane thermal conductivity Λ // shows a pronounced reduction when the temperature profile length falls below the phonon MFPs, leading to spot-size dependence in TDTR measurements [14,18,27].”
    Quote in the paperSubstantial claim0 of 3 sources checked
    • cites [14]

      Couldn’t be matched to a paper in Crossref, so it can’t be checked.

    • cites [18]

      Couldn’t be matched to a paper in Crossref, so it can’t be checked.

    • cites [27]

      Couldn’t be matched to a paper in Crossref, so it can’t be checked.

  • May combine two claims.

    Interpretationreasoning

    Consequently, phonon transport across the Al/Si interface is predominantly diffusive, with preserved thermal nonequilibrium between low- and high-energy phonons.

    “Consequently, phonon transport across this interface is predominantly diffusive, with preserved thermal nonequilibrium between low-and high-energy phonons.”
    Quote in the paperSubstantial claim

  • May combine two claims.

    Premisecitation

    At 80 K, the longest phonon MFPs in Si reach ∼100 μm, exceeding the characteristic length of the temperature profile in our TDTR measurements.

    “At 80 K, the longest phonon MFPs in Si reach ∼100 µm, exceeding the characteristic length of the temperature profile in our TDTR measurements [14,28].”
    Quote in the paperSubstantial claim0 of 2 sources checked
    • cites [14]

      Couldn’t be matched to a paper in Crossref, so it can’t be checked.

    • cites [28]

      Couldn’t be matched to a paper in Crossref, so it can’t be checked.

  • May combine two claims.

    Premisecitation

    The transmissivity of low-energy phonons considerably exceeds that of high-energy phonons, leading to a substantial nonequilibrium thermal resistance.

    “As documented in our prior studies, the transmissivity of low-energy phonons considerably exceeds that of high-energy phonons, thus leading to a substantial nonequilibrium thermal resistance [20].”
    Quote in the paperSubstantial claim0 of 1 sources checked
    • cites [20]

      Couldn’t be matched to a paper in Crossref, so it can’t be checked.

  • Probably not a substantial claim: may not pass S4 (based).

    Premisenone given

    According to the diffuse mismatch model, similar Debye temperatures with matched phonon DOS provide efficient phonon transmission across the interface, leading to a low phonon scattering rate.

    “According to the diffuse mismatch model (DMM), the similar Debye temperatures with matched phonon DOS provide efficient phonon transmission across the interface, leading to a low phonon scattering rate.”
    Quote in the paperNot a substantial claim

  • Probably not a substantial claim: may not pass S3 (load-bearing).

    Study design and conductcitation

    The pump and probe beams were focused to a 1/e2 radius of 30 μm to minimize non-equilibrium induced by spot size.

    “The pump and probe beams were focused to a 1/e 2 radius of 30 µm to minimize the non-equilibrium, induced by the spot size in our measurements [14].”
    Quote in the paperNot a substantial claim0 of 1 sources checked
    • cites [14]

      Couldn’t be matched to a paper in Crossref, so it can’t be checked.

  • May combine two claims.

    Study design and conductcitation

    The obtained maximum values of Λ and G in the Al/Si sample are in excellent agreement with literature values within the error range, validating the accuracy of our measurements.

    “The obtained maximum values of Λ and G in the Al/Si sample are in excellent agreement with literature values within the error range [20,26], validating the accuracy of our measurements.”
    Quote in the paperNot a substantial claim0 of 2 sources checked
    • cites [20]

      Couldn’t be matched to a paper in Crossref, so it can’t be checked.

    • cites [26]

      Couldn’t be matched to a paper in Crossref, so it can’t be checked.

  • Probably not a substantial claim: may not pass S3 (load-bearing).

    Premisecitation

    Si displays a broader spectral distribution of phonon MFPs compared to two-dimensional materials displaying frequency dependent Λ along the through-plane direction.

    “For example, Si displays a broader spectral distribution of phonon MFPs, compared to two-dimensional materials displaying frequency dependent Λ along the through-plane direction [14,19].”
    Quote in the paperNot a substantial claim0 of 2 sources checked
    • cites [14]

      Couldn’t be matched to a paper in Crossref, so it can’t be checked.

    • cites [19]

      Couldn’t be matched to a paper in Crossref, so it can’t be checked.

  • May combine two claims.

    Premisereasoning

    Both the two-channel model and the ballistic/diffusive model reveal the critical influence of the interface on frequency dependent thermal transport.

    “Importantly, both theories reveal the critical influence of the interface on frequency dependent thermal transport, thus underscoring the significance of the transducer/sample boundary condition.”
    Quote in the paperSubstantial claim

  • May combine two claims.

    Interpretationreasoning

    The atomically sharp interface in our Al/Si sample preserves the non-equilibrium effects and reveals the frequency dependence in our TDTR measurements.

    “The atomically sharp interface in our Al/Si sample preserves the non-equilibrium effects and reveals the frequency dependence in our TDTR measurements.”
    Quote in the paperSubstantial claim

  • May combine two claims.

    Interpretationnone given

    The atomically sharp Al/Si interface, with matched phonon density of states, minimizes interfacial phonon scattering, preserving phonon non-equilibrium in Si.

    “The atomically sharp Al/Si interface, with matched phonon density of states (DOS), minimizes the interfacial phonon scattering, preserving the phonon non-equilibrium in Si.”
    Quote in the paperSubstantial claim

  • May combine two claims.

    Interpretationown data

    The Al/SiO2/Si interface with a SiO2 barrier layer effectively scatters phonons and facilitates energy exchange within different branches of phonons, preventing frequency dependence at room temperature.

    “In contrast, the Al/SiO 2 /Si interface with a SiO 2 barrier layer effectively scatters phonons and facilitates energy exchange within different branches of phonons, preventing frequency dependence at RT.”
    Quote in the paperSubstantial claim

  • Probably not a substantial claim: may not pass S3 (load-bearing).

    Premisecitation

    Frequency dependent Λ has achieved great success in probing the spectral distribution of phonon MFPs in semiconductor alloys and 2D materials.

    “Frequency dependent Λ has achieved great success in probing the spectral distribution of phonon MFPs in semiconductor alloys and 2D materials, where we assume phonons with MFPs longer than the characteristic length undergo ballistic transport and do not contribute to the measured Λ [10,30].”
    Quote in the paperNot a substantial claim0 of 2 sources checked
    • cites [10]

      Couldn’t be matched to a paper in Crossref, so it can’t be checked.

    • cites [30]

      Couldn’t be matched to a paper in Crossref, so it can’t be checked.

    • The authors state this as an assumption: Phonons with MFPs longer than the characteristic length (or larger than 2d) undergo ballistic transport and do not contribute to the measured or cumulative thermal conductivity.

  • May combine two claims.

    Premisecitation

    Thermal conductivity shows a dependence on heating frequency, with a marked suppression when the heat diffusion length approaches phonon MFPs.

    “Consequently, thermal conductivity (Λ) shows a dependence on heating frequency, with a marked suppression when the heat diffusion length approaches phonon MFPs [9].”
    Quote in the paperSubstantial claim0 of 1 sources checked
    • cites [9]

      Couldn’t be matched to a paper in Crossref, so it can’t be checked.

  • May combine two claims.

    Interpretationreasoning

    Imperfections at the interface would facilitate energy exchange between different phonon branches and prohibit the non-equilibrium effects.

    “In this context, imperfections at the interface would facilitate energy exchange between different phonon branches and prohibit the non-equilibrium effects.”
    Quote in the paperSubstantial claim
    • Rests on an assumption: The Al/Si sample has an atomically sharp interface.

  • Probably not a substantial claim: may not pass S3 (load-bearing).

    Study design and conductnone given

    The laser powers were chosen to ensure that steady-state temperature rises on the sample surface are less than 5 K for both room-temperature and cryogenic measurements.

    “We carefully chose the laser powers (250 mW for the pump beam and 150 mW for the probe beam) to make sure that the steady-state temperature rises on the sample surface are less than 5 K for both room-temperature (RT) and cryogenic measurements.”
    Quote in the paperNot a substantial claim

  • May combine two claims.

    Interpretationown data

    The frequency dependence is previously buried due to the lack of high-quality sharp interfaces, as validated by measurements on the Al/SiO2/Si sample.

    “The dependence is previously buried due to the lack of high-quality sharp interfaces, as validated by measurements on the Al/SiO 2 /Si sample.”
    Quote in the paperSubstantial claim
    • Rests on an assumption: The Al/Si sample has an atomically sharp interface.

  • May combine two claims.

    Interpretationown data

    The sensitivity analysis highlights the role of inplane thermal conductivity Λ// for low-frequency TDTR measurements at cryogenic temperatures, which would be suppressed due to the limited laser spot size, thus affecting the measured apparent thermal conductivity.

    “The sensitivity analysis highlights the role of Λ // for low-frequency TDTR measurements at cryogenic temperatures, which would be suppressed due to the limited laser spot size, thus affecting the measured apparent Λ [? ].”
    Quote in the paperNot a substantial claim
    • The authors state this as an assumption: In the one-channel model, all energy carriers are in thermal equilibrium and transport diffusively for the whole process.
37 of 37

  • The paper relies on this without support.

    Previous TDTR measurements on Si at room temperature did not reveal apparent frequency dependence, regardless of the transducer/Si boundary conditions.

    “Nevertheless, previous TDTR measurements on Si at room temperature (RT) did not reveal apparent frequency dependence, regardless of the transducer/Si boundary conditions.”

  • The authors state this as an assumption.

    Phonons with MFPs longer than the characteristic length (or larger than 2d) undergo ballistic transport and do not contribute to the measured or cumulative thermal conductivity.

    “where we assume phonons with MFPs longer than the characteristic length undergo ballistic transport and do not contribute to the measured Λ [10,30].”
    “where we consider ballistic phonons with characteristic lengths larger than 2d do not contribute thermal conductivity, as illustrated in Fig. 5.”

  • The authors state this as an assumption.

    In the one-channel model, all energy carriers are in thermal equilibrium and transport diffusively for the whole process.

    “This model holds the assumption that all energy carriers are in thermal equilibrium and transport diffusively for the whole process.”

  • The authors state this as an assumption.

    The two-channel model divides phonons into low-energy (<3 THz, Channel 1) and high-energy (>3 THz, Channel 2) channels with a coupling factor g between them.

    “In the model, we divide the low-energy phonons (<3 THz, Channel 1) and high-energy phonons (>3 THz, Channel 2) into separate channels, where there is a coupling factor g between the two channels.”

  • The paper relies on this without support.

    The Al/Si sample has an atomically sharp interface.

    “our TDTR measurements observed the frequency dependent thermal transport in Si with an atomically sharp Al/Si interface at RT.”
5 of 5

Self-check

Percentages, sums and reported differences re-computed from the paper’s own numbers.

Each contradiction between two passages listed here was confirmed by an independent check.

  • Figure 2 fit uses two different stated values of Λ

    Minor

    The text says the one-channel fit in Figure 2(a) uses Λ = 135 W m−1 K−1, while the Figure 2 caption says Λ is fixed at 134 W m−1 K−1 for all six curves. These are presented as the same fits.

  • Sensitivity definition is assigned to the wrong equation

    Minor

    The supplementary text defines sensitivity in Eq. S2, but later says its definition is in Eq. S3. Eq. S3 is instead the uncertainty equation.

2 of 2

Cites

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5 of the 47 references couldn’t be matched to a known paper.

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Related

Authors
Liu, Y., Li, Q., Liu, F., Wang, X., & Sun, B.
Affiliations
  • Tsinghua Shenzhen International Graduate School (CN)
  • Tsinghua–Berkeley Shenzhen Institute (CN)
  • Peking University (CN)
ORCID
Venue
arXiv
Publisher
arXiv
Published
2024
ISSN
2331-8422 (ISSN-L)
DOI
10.48550/arxiv.2412.02227
arXiv
2412.02227
OpenAlex
W4405035927
Semantic Scholar
2e28b97796dab85fc9a1f55134cfab10626c0f4b
Cited by
2
References
47
Citations by year
2025: 2
Type
posted content
Language
en
Open access
Licence
arxiv.org/licenses/nonexclusive-distrib/1.0/
Locations
  • arXiv (Cornell University) (submittedVersion)
  • arXiv (Cornell University)
Funders
  • National Natural Science Foundation of China (12004211, 52161145502)
  • Tsinghua Shenzhen International Graduate School (QD2021008N, JC2021008)
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › Thermal properties of materials
  • Physical Sciences › Engineering › Mechanics of Materials › Thermoelastic and Magnetoelastic Phenomena
  • Physical Sciences › Engineering › Mechanics of Materials › Thermography and Photoacoustic Techniques
Keywords
phonon mean free path, Al/Si interface, interfacial phonon scattering, thermal non-equilibrium, low-temperature thermal transport, boundary conditions

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Claims read by deepseek-v4.1-flash under definition version 3 (extract-v3) on 2026-10-20.

Classified by jev-1.13-20260917 (gold-guideline-v0.2) on 2026-10-20.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

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