The DOI matches its Crossref record; 49 of the 49 references it cites were found in a registry or an index.
Metal‐Ion‐Modified Black Phosphorus with Enhanced Stability and Transistor Performance
Abstract
Black phosphorus (BP), a burgeoning elemental 2D semiconductor, has aroused increasing scientific and technological interest, especially as a channel material in field‐effect transistors (FETs). However, the intrinsic instability of BP causes practical concern and the transistor performance must also be improved. Here, the use of metal‐ion modification to enhance both the stability and transistor performance of BP sheets is described. Ag+ spontaneously adsorbed on the BP surface via cation–π interactions passivates the lone‐pair electrons of P thereby rendering BP more stable in air. Consequently, the Ag+‐modified BP FET shows greatly enhanced hole mobility from 796 to 1666 cm 2 V−1 s−1 and ON/OFF ratio from 5.9 × 10 4 to 2.6 × 10 6. The mechanisms pertaining to the enhanced stability and transistor performance are discussed and the strategy can be extended to other metal ions such as Fe 3+, Mg 2+, and Hg 2+. Such stable and high‐performance BP transistors are crucial to electronic and optoelectronic devices. The stability and semiconducting properties of BP sheets can be enhanced tremendously by this novel strategy.
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Cites
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Self-citationZeng, X., Luo, M., Liu, G., Wang, X., Tao, W., Lin, Y., Ji, X., Nie, L., & Mei, L. (2018) · Advanced Science · doi:10.1002/advs.201800510 · Cited by 598
Zeng, M., Xiao, Y., Liu, J., Yang, K., & Fu, L. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00633 · Cited by 574
Tyagi, D., Wang, H., Huang, W., Hu, L., Tang, Y., Guo, Z., Ouyang, Z., & Zhang, H. (2020) · Nanoscale · doi:10.1039/c9nr10178k · Cited by 508
Self-citation2D Material Optoelectronics for Information Functional Device Applications: Status and Challenges
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Metadata
- Authors
- Guo, Z., Chen, S., Wang, Z., Yang, Z., Liu, F., Xu, Y., Wang, J., Yi, Y., Zhang, H., Liao, L., Chu, P. K., & Yu, X.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2017-09-28
- Volume
- 29
- Issue
- 42
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2758958565
- Cited by
- 516
- References
- 49
- FWCI
- 30.04
- Type
- journal article
- Language
- en
- Open access
- closed
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