The DOI matches its Crossref record; 39 of the 39 references it cites were found in a registry or an index.
Synergies of Electrochemical Metallization and Valance Change in All‐Inorganic Perovskite Quantum Dots for Resistive Switching
Open accessAbstract
The in‐depth understanding of ions' generation and movement inside all‐inorganic perovskite quantum dots (CsPbBr 3 QDs), which may lead to a paradigm to break through the conventional von Neumann bottleneck, is strictly limited. Here, it is shown that formation and annihilation of metal conductive filaments and Br− ion vacancy filaments driven by an external electric field and light irradiation can lead to pronounced resistive‐switching effects. Verified by field‐emission scanning electron microscopy as well as energy‐dispersive X‐ray spectroscopy analysis, the resistive switching behavior of CsPbBr 3 QD‐based photonic resistive random‐access memory (RRAM) is initiated by the electrochemical metallization and valance change. By coupling CsPbBr 3 QD‐based RRAM with a p‐channel transistor, the novel application of an RRAM–gate field‐effect transistor presenting analogous functions of flash memory is further demonstrated. These results may accelerate the technological deployment of all‐inorganic perovskite QD‐based photonic resistive memory for successful logic application.
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Quantum Dot Light‐Emitting Diodes Based on Inorganic Perovskite Cesium Lead Halides (CsPbX3)
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Quantum dot–induced phase stabilization of α-CsPbI 3 perovskite for high-efficiency photovoltaics
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The chips are down for Moore’s law
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Organometal halide perovskite solar cells: degradation and stability
Berhe, T. A., Su, W.-N., Chen, C.-H., Pan, C.-J., Cheng, J.-H., Chen, H.-M., Tsai, M.-C., Chen, L.-Y., Dubale, A. A., & Hwang, B.-J. (2016) · Energy & Environmental Science · doi:10.1039/c5ee02733k · Cited by 1,779
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Phase-change materials for non-volatile photonic applications
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John, R. A., Demirağ, Y., Shynkarenko, Y., Berezovska, Y., Ohannessian, N., Payvand, M., Zeng, P., Bodnarchuk, M. I., Krumeich, F., Kara, G., et al. (2022) · Nature Communications · doi:10.1038/s41467-022-29727-1 · Cited by 292
Halide Perovskites: A New Era of Solution‐Processed Electronics
Younis, A., Lin, C., Guan, X., Shahrokhi, S., Huang, C., Wang, Y., He, T., Singh, S., Hu, L., Retamal, J. R. D., et al. (2021) · Advanced Materials · doi:10.1002/adma.202005000 · Cited by 282
Self-citationNanostructured perovskites for nonvolatile memory devices
Liu, Q., Gao, S., Xu, L., Yue, W., Zhang, C., Kan, H., Li, Y., & Shen, G. (2022) · Chemical Society Reviews · doi:10.1039/d1cs00886b · Cited by 163
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Metadata
- Authors
- Wang, Y., Lv, Z., Liao, Q., Shan, H., Chen, J., Zhou, Y., Zhou, L., Chen, X., Roy, V. A. L., Wang, Z., Xu, Z., Zeng, Y., & Han, S.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2018-05-21
- Volume
- 30
- Issue
- 28
- Pages
- e1800327-e1800327
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2804501473
- Cited by
- 334
- References
- 39
- FWCI
- 15.24
- Type
- journal article
- Language
- en
- Open access
- green
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- Wang, Y., Lv, Z., Liao, Q., Shan, H., Chen, J., Zhou, Y., Zhou, L., Chen, X., Roy, V. A. L., Wang, Z., Xu, Z., Zeng, Y., & Han, S. (2018). Synergies of Electrochemical Metallization and Valance Change in All‐Inorganic Perovskite Quantum Dots for Resistive Switching. Advanced Materials. https://doi.org/10.1002/adma.201800327
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