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Cited by 209

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How To Quantify the Efficiency Potential of Neat Perovskite Films: Perovskite Semiconductors with an Implied Efficiency Exceeding 28%

Open access
Stolterfoht, Martin, Grischek, Max, Caprioglio, Pietro, Wolff, Christian M., Gutierrez‐Partida, Emilio, Peña‐Camargo, Francisco, Rothhardt, Daniel, Zhang, Shanshan, Raoufi, Meysam, Wolansky, Jakob, Abdi‐Jalebi, Mojtaba, Stranks, Samuel D., Albrecht, Steve, Kirchartz, Thomas, Neher, Dieter·2020·Advanced Materials

Abstract

Perovskite photovoltaic (PV) cells have demonstrated power conversion efficiencies (PCE) that are close to those of monocrystalline silicon cells; however, in contrast to silicon PV, perovskites are not limited by Auger recombination under 1‐sun illumination. Nevertheless, compared to GaAs and monocrystalline silicon PV, perovskite cells have significantly lower fill factors due to a combination of resistive and non‐radiative recombination losses. This necessitates a deeper understanding of the underlying loss mechanisms and in particular the ideality factor of the cell. By measuring the intensity dependence of the external open‐circuit voltage and the internal quasi‐Fermi level splitting (QFLS), the transport resistance‐free efficiency of the complete cell as well as the efficiency potential of any neat perovskite film with or without attached transport layers are quantified. Moreover, intensity‐dependent QFLS measurements on different perovskite compositions allows for disentangling of the impact of the interfaces and the perovskite surface on the non‐radiative fill factor and open‐circuit voltage loss. It is found that potassium‐passivated triple cation perovskite films stand out by their exceptionally high implied PCEs > 28%, which could be achieved with ideal transport layers. Finally, strategies are presented to reduce both the ideality factor and transport losses to push the efficiency to the thermodynamic limit.

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Metadata

Authors
Stolterfoht, M., Grischek, M., Caprioglio, P., Wolff, C. M., Gutierrez‐Partida, E., Peña‐Camargo, F., Rothhardt, D., Zhang, S., Raoufi, M., Wolansky, J., Abdi‐Jalebi, M., Stranks, S. D., Albrecht, S., Kirchartz, T., & Neher, D.
Venue
Advanced Materials
Publisher
Wiley
Published
2020-03-12
Volume
32
Issue
17
Pages
e2000080-e2000080
ISSN
  • 0935-9648 (ISSN-L)
  • 1521-4095
OpenAlex
W3011785384
Cited by
209
References
1
FWCI
10.72
Type
journal article
Language
en
Open access
hybrid

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CoChat. (2026). Citation check: How To Quantify the Efficiency Potential of Neat Perovskite Films: Perovskite Semiconductors with an Implied Efficiency Exceeding 28%. https://app.cochat.ai/papers/10.1002/adma.202000080
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Stolterfoht, M., Grischek, M., Caprioglio, P., Wolff, C. M., Gutierrez‐Partida, E., Peña‐Camargo, F., Rothhardt, D., Zhang, S., Raoufi, M., Wolansky, J., Abdi‐Jalebi, M., Stranks, S. D., Albrecht, S., Kirchartz, T., & Neher, D. (2020). How To Quantify the Efficiency Potential of Neat Perovskite Films: Perovskite Semiconductors with an Implied Efficiency Exceeding 28%. Advanced Materials. https://doi.org/10.1002/adma.202000080

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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