Giant Ferroelectric Resistance Switching Controlled by a Modulatory Terminal for Low‐Power Neuromorphic In‐Memory Computing

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Items 101–130 of 130

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8. van der Waals ferroelectrics: Progress and an outlook for future research directions
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9. Contrastive-Signal-Dependent Plasticity: Forward-Forward Learning of Spiking Neural Systems
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10. Resistive switching in tetragonal tungsten bronze Sr0.6Ba0.4Nb2O6 thin films and control of Schottky barrier by insertion of BiFeO3 layer
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14. Multifunctional Reconfigurable Schottky Barrier Device Enabled by Local Out‐of‐Plane Ferroelectric Doping
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16. Perception, Synaptic Plasticity, and Spiking Neuron Function Enabled by a 2D Ferroelectric NbOBr 2 for Neuromorphic Vision
    Zhipeng Yu, Zixuan Zhao, Qingchen Han, Qinan Wang, Tianle Zeng, Yuxuan Zeng, Yanhui Xing, Bin Fang, Weiming Lv, Chun Zhao et al. · 2026 · Advanced Materials
17. Multi‐Level Saturation Current Encoding in Two‐Dimensional Ferroelectric Source‐Gated Transistors
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18. Computational Study on Interlocked-Ferroelectricity-Contributed High-Performance Memristors Based on Two-Dimensional van der Waals Ferroelectric Semiconductors
    Zhuo Chen, Yuchen Li, Tie-Lin Kong, Yang‐Yang Lv, Wei Fa, Shuang Chen · 2024 · ACS Applied Materials & Interfaces
19. A universal resist-assisted metal transfer method for 2D semiconductor contacts
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20. Theoretical Foundations
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21. Seed-Assisted Growth of Large-Area Β′-In2se3 Ferroelectric Thin Films
    Fei Xue, Lingrui Zou, Pu Feng, P.P. Jing, Chaoqun Dang, Haiming Zhu, Xin He, Lijie Zhang, Tao Wang · 2025 · SSRN Electronic Journal
22. Seed-assisted growth of large-area β'-In2Se3 ferroelectric thin films
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24. Polarizable Lattice Induced Persistent and Preferential Electron Self-Trapping in FePSe 3 for Bimodal Operation Artificial Synapse
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26. All‐Solid‐State, Ferroelectric‐Graded‐Doping Reconfigurable Molybdenum Ditelluride Devices
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28. Multifunctional artificial synapse enabled by CuInP2S6/graphene heterojunction nanosheets with fast speed and high recognition accuracy
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29. Spatially Complementary In‐Plane Lattice Strain Engineering for Reduced Contact Resistance and Enhanced Ferroelectric Switching in Van Der Waals α‐In 2 Se 3 Ferroelectric Semiconductor Field‐Effect Transistors
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