The DOI matches its Crossref record; 65 of the 65 references it cites were found in a registry or an index.
Ultrafast, Broadband Photodetector Based on MoSe2/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode
Open accessAbstract
A MoSe2/Si heterojunction photodetector is constructed by depositing MoSe2 film with vertically standing layered structure on Si substrate. Graphene transparent electrode is utilized to further enhance the separation and transport of photogenerated carriers. The device shows excellent performance in terms of wide response spectrum of UV–visible–NIR, high detectivity of 7.13 × 1010 Jones, and ultrafast response speed of ≈270 ns, unveiling the great potential for the heterojunction for high-performance optoelectronic devices.
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Cites
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Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
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Ultrasensitive photodetectors based on monolayer MoS2
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Cited by
Progress, Challenges, and Opportunities for 2D Material Based Photodetectors
Long, M., Wang, P., Fang, H., & Hu, W. (2019) · Advanced Functional Materials · doi:10.1002/adfm.201803807 · Cited by 1,598
Stable mid-infrared polarization imaging based on quasi-2D tellurium at room temperature
Tong, L., Huang, X., Wang, P., Ye, L., Peng, M., An, L., Sun, Q., Zhang, Y., Yang, G., Li, Z., et al. (2020) · Nature Communications · doi:10.1038/s41467-020-16125-8 · Cited by 485
Self-citationSilicon/2D-material photodetectors: from near-infrared to mid-infrared
Liu, C., Guo, J., Yu, L., Li, J., Zhang, M., Li, H., Shi, Y., & Dai, D. (2021) · Light: Science & Applications · doi:10.1038/s41377-021-00551-4 · Cited by 473
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Self-citation2D Layered Material‐Based van der Waals Heterostructures for Optoelectronics
Zhou, X., Hu, X., Yu, J., Liu, S., Shu, Z., Zhang, Q., Li, H., Ma, Y., Xu, H., & Zhai, T. (2018) · Advanced Functional Materials · doi:10.1002/adfm.201706587 · Cited by 408
Metadata
- Authors
- Mao, J., Yu, Y., Wang, L., Zhang, X., Wang, Y., Shao, Z., & Jie, J.
- Venue
- Advanced Science
- Publisher
- Wiley
- Published
- 2016-07-05
- Volume
- 3
- Issue
- 11
- Pages
- 1600018-1600018
- ISSN
- 2198-3844 (ISSN-L)
- OpenAlex
- W2464563468
- Cited by
- 286
- References
- 65
- FWCI
- 8.15
- Type
- journal article
- Language
- en
- Open access
- gold
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- Mao, J., Yu, Y., Wang, L., Zhang, X., Wang, Y., Shao, Z., & Jie, J. (2016). Ultrafast, Broadband Photodetector Based on MoSe2/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode. Advanced Science. https://doi.org/10.1002/advs.201600018
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