The DOI matches its Crossref record; 6 of the 6 references it cites were found in a registry or an index.
Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family
Open accessAbstract
As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant, low‐cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.
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Cites
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Chhowalla, M., Shin, H. S., Eda, G., Li, L.-J., Loh, K. P., & Zhang, H. (2013) · Nature Chemistry · doi:10.1038/nchem.1589 · Cited by 10,034
Shi, Y., Li, H., & Li, L.-J. (2015) · Chemical Society Reviews · doi:10.1039/c4cs00256c · Cited by 845
Self-citationTopological crystalline insulator states in Pb1−xSnxSe
Dziawa, P., Kowalski, B. J., Dybko, K., Buczko, R., Szczerbakow, A., Szot, M., Łusakowska, E., Balasubramanian, T., Wojek, B. M., Berntsen, M. H., et al. (2012) · Nature Materials · doi:10.1038/nmat3449 · Cited by 820
Controlled Synthesis of Highly Crystalline MoS 2 Flakes by Chemical Vapor Deposition
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Chemical vapor deposition growth of monolayer MoSe2 nanosheets
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Cited by
Li, H., Li, Y., Aljarb, A., Shi, Y., & Li, L.-J. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00212 · Cited by 382
Self-citationEmerging in‐plane anisotropic two‐dimensional materials
Li, L., Han, W., Pi, L., Niu, P., Han, J., Wang, C., Su, B., Li, H., Xiong, J., Bando, Y., et al. (2019) · InfoMat · doi:10.1002/inf2.12005 · Cited by 382
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Metadata
- Authors
- Zhou, X., Zhang, Q., Gan, L., Li, H., Xiong, J., & Zhai, T.
- Venue
- Advanced Science
- Publisher
- Wiley
- Published
- 2016-06-22
- Volume
- 3
- Issue
- 12
- Pages
- 1600177-1600177
- ISSN
- 2198-3844 (ISSN-L)
- OpenAlex
- W2471191437
- Cited by
- 224
- References
- 6
- FWCI
- 11.50
- Type
- journal article
- Language
- en
- Open access
- gold
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- Zhou, X., Zhang, Q., Gan, L., Li, H., Xiong, J., & Zhai, T. (2016). Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family. Advanced Science. https://doi.org/10.1002/advs.201600177
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