Cited by 820Topological Materials and PhenomenaAdvanced Condensed Matter Physics2D Materials and Applications

Topological crystalline insulator states in Pb1−xSnxSe

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Dziawa, P., Kowalski, B. J., Dybko, K., Buczko, R., Szczerbakow, A., Szot, M., Łusakowska, E., Balasubramanian, T. +4 more·2012·Nature Materials

Abstract

Topological insulators are a class of quantum materials in which time-reversal symmetry, relativistic effects and an inverted band structure result in the occurrence of electronic metallic states on the surfaces of insulating bulk crystals. These helical states exhibit a Dirac-like energy dispersion across the bulk bandgap, and they are topologically protected. Recent theoretical results have suggested the existence of topological crystalline insulators (TCIs), a class of topological insulators in which crystalline symmetry replaces the role of time-reversal symmetry in ensuring topological protection. In this study we show that the narrow-gap semiconductor Pb(1-x)Sn(x)Se is a TCI for x = 0.23. Temperature-dependent angle-resolved photoelectron spectroscopy demonstrates that the material undergoes a temperature-driven topological phase transition from a trivial insulator to a TCI. These experimental findings add a new class to the family of topological insulators, and we anticipate that they will lead to a considerable body of further research as well as detailed studies of topological phase transitions.

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  • Current ARPES works have not demonstrated resolution better than 5 meV, so fitting cannot exclude gap values below 5 meV.

    “The current ARPES works 29,30 have not demonstrated resolution better than 5 meV, and thus fitting of the energy-momentum distribution curves lacks the resolving power to exclude gap values o5 meV (see Supplementary Fig. S10 and Supplementary Discussion).”
  • Although the existence of surface states correlated with the band inversion transition is established, whether they are gapped or gapless requires surface transport experiments on improved-quality samples, which is currently not possible.

    “Therefore, although the existence of surface states correlated with band inversion transition is established here in our work, their gapped or gaplessness nature requires surface transport experiments on samples with improved quality, which is currently not possible 29 .”

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Authors
Dziawa, P., Kowalski, B. J., Dybko, K., Buczko, R., Szczerbakow, A., Szot, M., Łusakowska, E., Balasubramanian, T., Wojek, B. M., Berntsen, M. H., Tjernberg, O., & Story, T.
Affiliations
  • Institute of Physics (PL)
  • Lund University (SE)
  • KTH Royal Institute of Technology (SE)
Corresponding author
  • Tjernberg, O.
  • Story, T.
Venue
Nature Materials
Published
2012-09-30
Volume
11
Issue
12
Pages
1023-1027
ISSN
  • 1476-1122 (ISSN-L)
  • 1476-4660
OpenAlex
W1997811253
Cited by
820
References
32
Citations by year
2026: 21 · 2025: 50 · 2024: 37 · 2023: 39 · 2022: 53 · 2021: 61 · 2020: 66 · 2019: 72 · 2018: 88 · 2017: 75 · 2016: 67 · 2015: 79 · 2014: 72 · 2013: 33 · 2012: 7
FWCI
31.61
Type
journal article
Language
en
Open access
Locations
  • Nature Materials (publishedVersion)
  • PubMed (publishedVersion)
  • arXiv (Cornell University) (submittedVersion)
  • Lund University Publications (Lund University) (submittedVersion)
  • arXiv (Cornell University)
Funders
  • European Commission
  • Knut och Alice Wallenbergs Stiftelse
  • Vetenskapsrådet
  • European Regional Development Fund
Topics
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Topological Materials and Phenomena
  • Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Advanced Condensed Matter Physics
  • Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
Keywords
topological crystalline insulators, Pb1-xSnxSe, crystal symmetry, topological phase transition, narrow-gap semiconductors, topological protection, surface states, angle-resolved photoemission

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