The DOI matches its Crossref record; 113 of the 113 references it cites were found in a registry or an index.
Recent Advances in GaN‐Based Power HEMT Devices
Abstract
The ever‐increasing power density and operation frequency in electrical power conversion systems require the development of power devices that can outperform conventional Si‐based devices. Gallium nitride (GaN) has been regarded as the candidate for next‐generation power devices to improve the conversion efficiency in high‐power electric systems. GaN‐based high electron mobility transistors (HEMTs) with normally‐off operation is an important device structure for different application scenarios. In this review, an overview of a series of effective approaches to improve the performance of GaN‐based power HEMT devices is given. Modified epistructures are presented to suppress defects and current leakage, and low‐damage recess‐free processes are discussed in fabricating normally‐off HEMTs. Possible effects of dielectrics on a metal–insulator–semiconductor (MIS) structure are also intensively introduced. Metal/semiconductor contact engineering is investigated, and fabrication of Au‐free ohmic contact and graphene insertion layer to enhance the device performance is emphasized. Finally, the effects of field plates are studied through the use of simulated and fabricated devices.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Ambacher, O., Smart, J., Shealy, J. R., Weimann, N. G., Chu, K., Murphy, M., Schaff, W. J., Eastman, L. F., Dimitrov, R., Wittmer, L., et al. (1999) · Journal of Applied Physics · doi:10.1063/1.369664 · Cited by 3,022
Band offsets of wide-band-gap oxides and implications for future electronic devices
Robertson, J. (2000) · Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena · doi:10.1116/1.591472 · Cited by 2,049
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
Jones, E. A., Wang, F. F., & Costinett, D. (2016) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2016.2582685 · Cited by 1,259
Uemoto, Y., Hikita, M., Ueno, H., Matsuo, H., Ishida, H., Yanagihara, M., Ueda, T., Tanaka, T., & Ueda, D. (2007) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2007.908601 · Cited by 1,038
Proton transport through one-atom-thick crystals
Hu, S., Lozada-Hidalgo, M., Wang, F. C., Mishchenko, A., Schedin, F., Nair, R. R., Hill, E. W., Boukhvalov, D. W., Katsnelson, M. I., Dryfe, R. A. W., et al. (2014) · Nature · doi:10.1038/nature14015 · Cited by 844
High-K materials and metal gates for CMOS applications
Robertson, J., & Wallace, R. M. (2014) · Materials Science and Engineering R Reports · doi:10.1016/j.mser.2014.11.001 · Cited by 793
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Cai, Y., Zhou, Y., Chen, K. J., & Lau, K. M. (2005) · IEEE Electron Device Letters · doi:10.1109/led.2005.851122 · Cited by 665
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Roccaforte, F., Fiorenza, P., Greco, G., Lo Nigro, R., Giannazzo, F., Iucolano, F., & Saggio, M. (2018) · Microelectronic Engineering · doi:10.1016/j.mee.2017.11.021 · Cited by 590
Saito, W., Takada, Y., Kuraguchi, M., Tsuda, K., & Omura, I. (2006) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2005.862708 · Cited by 574
Cai, Y., Zhou, Y., Lau, K. M., & Chen, K. J. (2006) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2006.881054 · Cited by 537
Metadata
- Authors
- He, J., Cheng, W., Wang, Q., Cheng, K., Yu, H., & Chai, Y.
- Venue
- Advanced Electronic Materials
- Publisher
- Wiley
- Published
- 2021-01-29
- Volume
- 7
- Issue
- 4
- ISSN
- 2199-160X (ISSN-L)
- OpenAlex
- W3127442223
- Cited by
- 258
- References
- 113
- FWCI
- 15.03
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Recent Advances in GaN‐Based Power HEMT Devices. https://app.cochat.ai/papers/10.1002/aelm.202001045
- The paper
- He, J., Cheng, W., Wang, Q., Cheng, K., Yu, H., & Chai, Y. (2021). Recent Advances in GaN‐Based Power HEMT Devices. Advanced Electronic Materials. https://doi.org/10.1002/aelm.202001045
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
