The DOI matches its Crossref record; 25 of the 25 references it cites were found in a registry or an index.
Band offsets of wide-band-gap oxides and implications for future electronic devices
Abstract
Wide-band-gap oxides such as SrTiO3 are shown to be critical tests of theories of Schottky barrier heights based on metal-induced gap states and charge neutrality levels. This theory is reviewed and used to calculate the Schottky barrier heights and band offsets for many important high dielectric constant oxides on Pt and Si. Good agreement with experiment is found for barrier heights. The band offsets for electrons on Si are found to be small for many key oxides such as SrTiO3 and Ta2O5 which limit their utility as gate oxides in future silicon field effect transistors. The calculations are extended to screen other proposed oxides such as BaZrO3. ZrO2, HfO2, La2O3, Y2O3, HfSiO4, and ZrSiO4. Predictions are also given for barrier heights of the ferroelectric oxides Pb1−xZrxTiO3 and SrBi2Ta2O9 which are used in nonvolatile memories.
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Beyond the conventional transistor
Wong, H.-S. P. (2002) · IBM Journal of Research and Development · doi:10.1147/rd.462.0133 · Cited by 573
An Oxide Schottky Junction Artificial Optoelectronic Synapse
Gao, S., Liu, G., Yang, H., Hu, C., Chen, Q., Gong, G., Xue, W., Yi, X., Shang, J., & Li, R.-W. (2019) · ACS Nano · doi:10.1021/acsnano.9b00340 · Cited by 494
Zhou, Y., Li, Q., Dang, B., Yang, Y., Shao, T., Li, H., Hu, J., Zeng, R., He, J., & Wang, Q. (2018) · Advanced Materials · doi:10.1002/adma.201805672 · Cited by 489
Knobloch, T., Illarionov, Y. Y., Ducry, F., Schleich, C., Wachter, S., Watanabe, K., Taniguchi, T., Mueller, T., Waltl, M., Lanza, M., et al. (2021) · Nature Electronics · doi:10.1038/s41928-020-00529-x · Cited by 367
Metadata
- Authors
- Robertson, J.
- Venue
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
- Publisher
- American Vacuum Society
- Published
- 2000-05-01
- Volume
- 18
- Issue
- 3
- Pages
- 1785-1791
- ISSN
- 1071-1023 (ISSN-L)
- 1520-8567
- OpenAlex
- W2019017977
- Cited by
- 2,049
- References
- 25
- FWCI
- 90.95
- Type
- journal article
- Language
- en
- Open access
- closed
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- Robertson, J. (2000). Band offsets of wide-band-gap oxides and implications for future electronic devices. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena. https://doi.org/10.1116/1.591472
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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