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Boron Doping of Graphene for Graphene–Silicon p–n Junction Solar Cells
Abstract
The modulation of the electrical properties of graphene is essential to realize graphene-based electronics. Boron-doped p-type graphene films with band gaps of ∼50 meV are prepared by chemical vapor deposition using ethanol and boron powder as the precursors. Under AM 1.5 illumination, the p–n junction solar cells made from boron-doped graphene films and n-type silicon show 3.4% conversion efficiency after nitric acid treatment.
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Cited by
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Duan, X., Xu, J., Wei, Z., Ma, J., Guo, S., Wang, S., Liu, H., & Dou, S. (2017) · Advanced Materials · doi:10.1002/adma.201701784 · Cited by 754
Heteroatom doped graphene engineering for energy storage and conversion
Kumar, R., Sahoo, S., Joanni, E., Singh, R. K., Maegawa, K., Tan, W. K., Kawamura, G., Kar, K. K., & Matsuda, A. (2020) · Materials Today · doi:10.1016/j.mattod.2020.04.010 · Cited by 681
Synthesis and characterization of boron doped graphene nanosheets for supercapacitor applications
Thirumal, V., Pandurangan, A., Jayavel, R., & Ilangovan, R. (2016) · Synthetic Metals · doi:10.1016/j.synthmet.2016.07.011 · Cited by 222
Electrochemical behavior of boron-doped mesoporous graphene depending on its boron configuration
Nankya, R., Lee, J., Opar, D. O., & Jung, H. (2019) · Applied Surface Science · doi:10.1016/j.apsusc.2019.06.015 · Cited by 86
Metadata
- Authors
- Li, X., Fan, L., Li, Z., Wang, K., Zhong, M., Wei, J., Wu, D., & Zhu, H.
- Venue
- Advanced Energy Materials
- Publisher
- Wiley
- Published
- 2012-02-17
- Volume
- 2
- Issue
- 4
- Pages
- 425-429
- ISSN
- 1614-6832 (ISSN-L)
- 1614-6840
- OpenAlex
- W2040032197
- Cited by
- 192
- References
- 0
- FWCI
- 6.66
- Type
- journal article
- Language
- en
- Open access
- closed
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- Li, X., Fan, L., Li, Z., Wang, K., Zhong, M., Wei, J., Wu, D., & Zhu, H. (2012). Boron Doping of Graphene for Graphene–Silicon p–n Junction Solar Cells. Advanced Energy Materials. https://doi.org/10.1002/aenm.201100671
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