The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
Single‐Layer Semiconducting Nanosheets: High‐Yield Preparation and Device Fabrication
Abstract
Ordentlich gestapelt: 2D-halbleitende Nanomaterialien aus einzelnen MoS2-, WS2-, TiS2-, TaS2-, ZrS2- und Graphenschichten wurden durch elektrochemische Lithiierung hergestellt (siehe Bild). Eine Ausbeute von 92 % wurde bei der Produktion einzelner MoS2-Schichten erreicht. Aus den MoS2-Schichten wurde ein Dünnschichttransistor hergestellt, der zum Nachweis von NO bis zu einer Detektionsgrenze von 190 ppt verwendet wurde.
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Citations
Cites
Graphene: Status and Prospects
Geim, A. K. (2009) · Science · doi:10.1126/science.1158877 · Cited by 13,942
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Narrow graphene nanoribbons from carbon nanotubes
Jiao, L., Zhang, L., Wang, X., Diankov, G., & Dai, H. (2009) · Nature · doi:10.1038/nature07919 · Cited by 2,441
Catalytic Properties of Single Layers of Transition Metal Sulfide Catalytic Materials
Chianelli, R. R., Siadati, M. H., De la Rosa, M. P., Berhault, G., Wilcoxon, J. P., Bearden, R., & Abrams, B. L. (2006) · Catalysis Reviews · doi:10.1080/01614940500439776 · Cited by 304
Cited by
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Solution‐Processed Two‐Dimensional MoS2 Nanosheets: Preparation, Hybridization, and Applications
Zhang, X., Lai, Z., Tan, C., & Zhang, H. (2016) · Angewandte Chemie International Edition · doi:10.1002/anie.201509933 · Cited by 678
Self-citationThree‐Dimensional Assembly of Single‐Layered MoS2
Wang, P., Sun, H., Ji, Y., Li, W., & Wang, X. (2014) · Advanced Materials · doi:10.1002/adma.201304120 · Cited by 447
Sun, G., Zhang, X., Lin, R., Yang, J., Zhang, H., & Chen, P. (2015) · Angewandte Chemie International Edition · doi:10.1002/anie.201411533 · Cited by 355
Self-citationChen, J., Wu, X., Yin, L., Li, B., Hong, X., Fan, Z., Chen, B., Xue, C., & Zhang, H. (2015) · Angewandte Chemie · doi:10.1002/ange.201410172 · Cited by 176
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Metadata
- Authors
- Zeng, Z., Yin, Z., Huang, X., Li, H., He, Q., Lu, G., Boey, F., & Zhang, H.
- Venue
- Angewandte Chemie
- Publisher
- Wiley
- Published
- 2011-10-21
- Volume
- 123
- Issue
- 47
- Pages
- 11289-11293
- ISSN
- 0044-8249 (ISSN-L)
- 1521-3757
- OpenAlex
- W4234103693
- Cited by
- 333
- References
- 4
- FWCI
- 5.73
- Type
- journal article
- Language
- de
- Open access
- closed
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- Zeng, Z., Yin, Z., Huang, X., Li, H., He, Q., Lu, G., Boey, F., & Zhang, H. (2011). Single‐Layer Semiconducting Nanosheets: High‐Yield Preparation and Device Fabrication. Angewandte Chemie. https://doi.org/10.1002/ange.201106004
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
