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Cited by 2,753

The DOI matches its Crossref record; 192 of the 192 references it cites were found in a registry or an index.

Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

Open access
Jariwala, Deep, Sangwan, Vinod K., Lauhon, Lincoln J., Marks, Tobin J., Hersam, Mark C.·2014·ACS Nano

Abstract

With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Toward that end, several classes of high-performance devices have been reported along with significant progress in understanding their physical properties. Here, we present a review of the architecture, operating principles, and physics of electronic and optoelectronic devices based on ultrathin transition metal dichalcogenide semiconductors. By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.

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Metadata

Authors
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C.
Venue
ACS Nano
Published
2014-01-31
Volume
8
Issue
2
Pages
1102-1120
ISSN
  • 1936-0851 (ISSN-L)
  • 1936-086X
OpenAlex
W2040077883
Cited by
2,753
References
192
FWCI
118.38
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides. https://app.cochat.ai/papers/10.1021/nn500064s
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Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014). Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides. ACS Nano. https://doi.org/10.1021/nn500064s

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