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Cited by 257

The DOI matches its Crossref record; 28 of the 28 references it cites were found in a registry or an index.

Enriched Surface Oxygen Vacancies of Photoanodes by Photoetching with Enhanced Charge Separation

Feng, Shijia, Wang, Tuo, Liu, Bin, Hu, Congling, Li, Lulu, Zhao, Zhi‐Jian, Gong, Jinlong·2020·Angewandte Chemie International Edition

Abstract

A facile photoetching approach is described that alleviates the negative effects from bulk defects by confining the oxygen vacancy (O vac) at the surface of BiVO 4 photoanode, by 10‐minute photoetching. This strategy could induce enriched O vac at the surface of BiVO 4, which avoids the formation of excessive bulk defects. A mechanism is proposed to explain the enhanced charge separation at the BiVO 4 /electrolyte interface, which is supported by density functional theory (DFT) calculations. The optimized BiVO 4 with enriched surface O vac presents the highest photocurrent among undoped BiVO 4 photoanodes. Upon loading FeOOH/NiOOH cocatalysts, photoetched BiVO 4 photoanode reaches a considerable water oxidation photocurrent of 3.0 mA cm−2 at 0.6 V vs. reversible hydrogen electrode. An unbiased solar‐to‐hydrogen conversion efficiency of 3.5 % is realized by this BiVO 4 photoanode and a Si photocathode under 1 sun illumination.

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Metadata

Authors
Feng, S., Wang, T., Liu, B., Hu, C., Li, L., Zhao, Z., & Gong, J.
Venue
Angewandte Chemie International Edition
Publisher
Wiley
Published
2019-12-23
Volume
59
Issue
5
Pages
2044-2048
ISSN
  • 1433-7851 (ISSN-L)
  • 1521-3773
OpenAlex
W2990985527
Cited by
257
References
28
FWCI
6.18
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Enriched Surface Oxygen Vacancies of Photoanodes by Photoetching with Enhanced Charge Separation. https://app.cochat.ai/papers/10.1002/anie.201913295
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Feng, S., Wang, T., Liu, B., Hu, C., Li, L., Zhao, Z., & Gong, J. (2020). Enriched Surface Oxygen Vacancies of Photoanodes by Photoetching with Enhanced Charge Separation. Angewandte Chemie International Edition. https://doi.org/10.1002/anie.201913295

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