Student or educator? Sign up with your school email and get 6 months of Pro free.
Cited by 978

The DOI matches its Crossref record.

Charge Coupled Semiconductor Devices

Boyle, W. S., Smith, G. E.·1970·Bell System Technical Journal

Abstract

In this paper we describe a new semiconductor device concept. Basically, it consists of storing charge in potential wells created at the surface of a semiconductor and moving the charge (representing information) over the surface by moving the potential minima. We discuss schemes for creating, transferring, and detecting the presence or absence of the charge. In particular, we consider minority carrier charge storage at the Si-SiO2interface of a MOS capacitor. This charge may be transferred to a closely adjacent capacitor on the same substrate by appropriate manipulation of electrode potentials. Examples of possible applications are as a shift register, as an imaging device, as a display device, and in performing logic.

Overview

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

A few free checks a day · papers already verified open instantly · results are public

Integrity signals

Registry

Crossref · 10.1002/j.1538-7305.1970.tb01790.x

Cites

Statistics

Verification

Claims the paper makes

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

A few free checks a day · papers already verified open instantly · results are public

Self-check

Percentages, sums and reported differences re-computed from the paper’s own numbers.

The self-check needs the paper’s full text.

Citations

Cited by

See all 978

Metadata

Authors
Boyle, W. S., & Smith, G. E.
Venue
Bell System Technical Journal
Published
1970-04
Volume
49
Issue
4
Pages
587-593
ISSN
0005-8580 (ISSN-L)
OpenAlex
W2113742150
Cited by
978
References
0
FWCI
63.68
Type
journal article
Language
en
Open access
closed

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review

How to cite

Cite CoChat for the checks on this page, and the paper for its own findings.

This page
CoChat. (2026). Citation check: Charge Coupled Semiconductor Devices. https://app.cochat.ai/papers/10.1002/j.1538-7305.1970.tb01790.x
The paper
Boyle, W. S., & Smith, G. E. (1970). Charge Coupled Semiconductor Devices. Bell System Technical Journal. https://doi.org/10.1002/j.1538-7305.1970.tb01790.x

Data sources

Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.