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HgCdTe infrared detector material: history, status and outlook

Open access
Rogalski, A·2005·Reports on Progress in Physics

Abstract

This article reviews the history, the present status and possible future developments of HgCdTe ternary alloy for infrared (IR) detector applications. HgCdTe IR detectors have been intensively developed since the first synthesis of this material in 1958. This article summarizes the fundamental properties of this versatile narrow gap semiconductor, and relates the material properties to its successful applications as an IR photoconductive and photovoltaic detector material. An emphasis is put on key developments in the crystal growth and their influence on device evolution. Competitive technologies to HgCdTe ternary alloy are also presented. Recent advances of backside illuminated HgCdTe heterojunction photodiodes have enabled a third generation of multispectral instruments for remote sensing applications and have led to the practicality of multiband IR focal plane array technology. Finally, evaluation of HgCdTe for room temperature long wavelength IR applications is presented.

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Metadata

Authors
Rogalski, A.
Venue
Reports on Progress in Physics
Published
2005-08-23
Volume
68
Issue
10
Pages
2267-2336
ISSN
  • 0034-4885 (ISSN-L)
  • 1361-6633
OpenAlex
W2029705611
Cited by
1,047
References
14
FWCI
12.71
Type
journal article
Language
en
Open access
bronze

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CoChat. (2026). Citation check: HgCdTe infrared detector material: history, status and outlook. https://app.cochat.ai/papers/10.1088/0034-4885/68/10/r01
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Rogalski, A. (2005). HgCdTe infrared detector material: history, status and outlook. Reports on Progress in Physics. https://doi.org/10.1088/0034-4885/68/10/r01

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