The DOI matches its Crossref record; 23 of the 23 references it cites were found in a registry or an index.
Layer‐dependent resonant Raman scattering of a few layer MoS2
Abstract
We report resonant Raman scattering of MoS 2 layers comprising of single, bi, four and seven layers, showing a strong dependence on the layer thickness. Indirect band gap MoS 2 in bulk becomes a direct band gap semiconductor in the monolayer form. New Raman modes are seen in the spectra of single‐ and few‐layer MoS 2 samples which are absent in the bulk. The Raman mode at ~230 cm−1 appears for two, four and seven layers. This mode has been attributed to the longitudinal acoustic phonon branch at the M point (LA(M)) of the Brillouin zone. The mode at ~179 cm−1 shows asymmetric character for a few‐layer sample. The asymmetry is explained by the dispersion of the LA(M) branch along the Γ‐M direction. The most intense spectral region near 455 cm−1 shows a layer‐dependent variation of peak positions and relative intensities. The high energy region between 510 and 645 cm−1 is marked by the appearance of prominent new Raman bands, varying in intensity with layer numbers. Resonant Raman spectroscopy thus serves as a promising non invasive technique to accurately estimate the thickness of MoS 2 layers down to a few atoms thick. Copyright © 2012 John Wiley & Sons, Ltd.
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Cites
Electric Field Effect in Atomically Thin Carbon Films
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Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
Mak, K. F., Lee, C., Hone, J., Shan, J., & Heinz, T. F. (2010) · Physical Review Letters · doi:10.1103/physrevlett.105.136805 · Cited by 15,586
Raman Spectrum of Graphene and Graphene Layers
Ferrari, A. C., Meyer, J. C., Scardaci, V., Casiraghi, C., Lazzeri, M., Mauri, F., Piscanec, S., Jiang, D., Novoselov, K. S., Roth, S., et al. (2006) · Physical Review Letters · doi:10.1103/physrevlett.97.187401 · Cited by 15,047
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Emerging Photoluminescence in Monolayer MoS2
Splendiani, A., Sun, L., Zhang, Y., Li, T., Kim, J., Chim, C.-Y., Galli, G., & Wang, F. (2010) · Nano Letters · doi:10.1021/nl903868w · Cited by 9,501
Anomalous Lattice Vibrations of Single- and Few-Layer MoS2
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Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
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Self-citationSpatially Resolved Raman Spectroscopy of Single- and Few-Layer Graphene
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The one phonon Raman spectrum in microcrystalline silicon
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Chen, C., Xie, X., Anasori, B., Sarycheva, A., Makaryan, T., Zhao, M., Urbankowski, P., Miao, L., Jiang, J., & Gogotsi, Y. (2018) · Angewandte Chemie International Edition · doi:10.1002/anie.201710616 · Cited by 710
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
Carvalho, B. R., Wang, Y., Mignuzzi, S., Roy, D., Terrones, M., Fantini, C., Crespi, V. H., Malard, L. M., & Pimenta, M. A. (2017) · Nature Communications · doi:10.1038/ncomms14670 · Cited by 283
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Metadata
- Authors
- Chakraborty, B., Matte, H. S. S. R., Sood, A. K., & Rao, C. N. R.
- Venue
- Journal of Raman Spectroscopy
- Publisher
- Wiley
- Published
- 2012-09-10
- Volume
- 44
- Issue
- 1
- Pages
- 92-96
- ISSN
- 0377-0486 (ISSN-L)
- 1097-4555
- OpenAlex
- W2133418430
- Cited by
- 508
- References
- 23
- FWCI
- 9.12
- Type
- journal article
- Language
- en
- Open access
- closed
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