The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
Open accessAbstract
The recent discovery of graphene has led to many advances in two-dimensional physics and devices. The graphene devices fabricated so far have relied on SiO(2) back gating. Electrochemical top gating is widely used for polymer transistors, and has also been successfully applied to carbon nanotubes. Here we demonstrate a top-gated graphene transistor that is able to reach doping levels of up to 5x1013 cm-2, which is much higher than those previously reported. Such high doping levels are possible because the nanometre-thick Debye layer in the solid polymer electrolyte gate provides a much higher gate capacitance than the commonly used SiO(2) back gate, which is usually about 300 nm thick. In situ Raman measurements monitor the doping. The G peak stiffens and sharpens for both electron and hole doping, but the 2D peak shows a different response to holes and electrons. The ratio of the intensities of the G and 2D peaks shows a strong dependence on doping, making it a sensitive parameter to monitor the doping.
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Cites
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Electric Field Effect in Atomically Thin Carbon Films
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Self-citationGeim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
Self-citationTwo-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Self-citationExperimental observation of the quantum Hall effect and Berry's phase in graphene
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Cited by
Raman spectroscopy as a versatile tool for studying the properties of graphene
Ferrari, A. C., & Basko, D. M. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2013.46 · Cited by 7,405
Self-citationWang, H., Maiyalagan, T., & Wang, X. (2012) · ACS Catalysis · doi:10.1021/cs200652y · Cited by 3,618
Hammock, M. L., Chortos, A., Tee, B. C. ‐., Tok, J. B. ‐., & Bao, Z. (2013) · Advanced Materials · doi:10.1002/adma.201302240 · Cited by 2,396
Optical nano-imaging of gate-tunable graphene plasmons
Chen, J., Badioli, M., Alonso-González, P., Thongrattanasiri, S., Huth, F., Osmond, J., Spasenović, M., Centeno, A., Pesquera, A., Godignon, P., et al. (2012) · Nature · doi:10.1038/nature11254 · Cited by 2,107
Grapheneviasonication assisted liquid-phase exfoliation
Ciesielski, A., & Samorì, P. (2014) · Chem. Soc. Rev. · doi:10.1039/c3cs60217f · Cited by 1,207
Metadata
- Authors
- Das, A., Pisana, S., Chakraborty, B., Piscanec, S., Saha, S. K., Waghmare, U. V., Novoselov, K. S., Krishnamurthy, H. R., Geim, A. K., Ferrari, A. C., & Sood, A. K.
- Venue
- Nature Nanotechnology
- Published
- 2008-03-30
- Volume
- 3
- Issue
- 4
- Pages
- 210-215
- ISSN
- 1748-3387 (ISSN-L)
- 1748-3395
- OpenAlex
- W2110835769
- Cited by
- 3,621
- References
- 5
- FWCI
- 70.23
- Type
- journal article
- Language
- en
- Open access
- green
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- Das, A., Pisana, S., Chakraborty, B., Piscanec, S., Saha, S. K., Waghmare, U. V., Novoselov, K. S., Krishnamurthy, H. R., Geim, A. K., Ferrari, A. C., & Sood, A. K. (2008). Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor. Nature Nanotechnology. https://doi.org/10.1038/nnano.2008.67
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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