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Stacking fault energy and ionicity of cubic III–V compounds
Abstract
Using weak beam electron microscopy the stacking fault energy (SFE) of III-V compounds is determined by measuring the dissociation width of edge dislocations. The SFE corrected for the lattice parameters is given in meV/atom for GaAs, GaP, GaSb, InAs, InP, and InSb. As expected there is a strong correlation of the SFE with the ionicity of the bond. The different plasticity of the compounds is traced back to different dislocation velocities.
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Cited by
Phase Perfection in Zinc Blende and Wurtzite III−V Nanowires Using Basic Growth Parameters
Joyce, H. J., Wong-Leung, J., Gao, Q., Tan, H. H., & Jagadish, C. (2010) · Nano Letters · doi:10.1021/nl903688v · Cited by 484
Shape Control of II–VI Semiconductor Nanomaterials
Kumar, S., & Nann, T. (2006) · Small · doi:10.1002/smll.200500357 · Cited by 386
Defects in plastically deformed 6H SiC single crystals studied by transmission electron microscopy
Maeda, K., Suzuki, K., Fujita, S., Ichihara, M., & Hyodo, S. (1988) · Philosophical Magazine A · doi:10.1080/01418618808214408 · Cited by 165
Dislocation Cores and Hardness Polarity of 4H‐SiC
Ning, X., Huvey, N., & Pirouz, P. (1997) · Journal of the American Ceramic Society · doi:10.1111/j.1151-2916.1997.tb03033.x · Cited by 60
Metadata
- Authors
- Gottschalk, H., Patzer, G., & Alexander, H.
- Venue
- Physica Status Solidi (a)
- Publisher
- Wiley
- Published
- 1978-01-16
- Volume
- 45
- Issue
- 1
- Pages
- 207-217
- ISSN
- 0031-8965 (ISSN-L)
- 1521-396X
- OpenAlex
- W2149909421
- Cited by
- 298
- References
- 0
- FWCI
- 13.23
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Stacking fault energy and ionicity of cubic III–V compounds. https://app.cochat.ai/papers/10.1002/pssa.2210450125
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- Gottschalk, H., Patzer, G., & Alexander, H. (1978). Stacking fault energy and ionicity of cubic III–V compounds. Physica Status Solidi (a). https://doi.org/10.1002/pssa.2210450125
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