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Cited by 165Microstructure and mechanical propertiesSilicon Carbide Semiconductor TechnologiesAdvanced ceramic materials synthesis

The DOI matches its Crossref record; 28 of the 28 references it cites were found in a registry or an index.

Defects in plastically deformed 6H SiC single crystals studied by transmission electron microscopy

Maeda, K., Suzuki, K., Fujita, S., Ichihara, M., Hyodo, S.·1988·Philosophical Magazine A
DOI 10.1080/01418618808214408
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Abstract

Transmission electron microscopic studies have been performed on lattice defects in 6H silicon carbide single crystals; the crystals were subjected to microhardness indentation tests between room temperature and 1200°C and then to uniaxial compression at temperatures from 1100 to 1650°C. It was observed that their basal dislocations, the main defects introduced by deformation, were dissociated into Shockley partials separated by very wide stacking faults, the energy of which was evaluated to be 2.5 ± 0·9 mJ m−2. The lineshapes of the partials varied considerably, depending on the sign and angle (with the dislocation line) of the Burgers vector; this suggests that the mobility of the partials is affected by the geometry of dislocations. The fact that basal dislocations were aligned more or less in crystallographic 〈1120〉 directions indicates the presence of a high Peierls potential. Macroplastic deformation was observed above 1000°C. This critical temperature seems to be determined by the motion of the least mobile partials. The ductile–brittle transition occurred between 800 and 1000°C. This transition is considered to have been induced by the temperature-enhanced mobilization of the slowest partials or by the thermally activated constriction of dissociated pairs, both of which are prerequisites for dislocation multiplication. The hardness of the crystals showed a strong temperature dependence below 800°C. This can be explained by assuming that, although no dislocation multiplication occurs, only very mobile partials experience thermally activated glide. Other implications of the experimental findings are discussed.

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Crossref · 10.1080/01418618808214408

Cites

28 of 28 references verified0 citation errors · 0 not checkable

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  • Zhurong is powered by four solar panels and carries six scientific instruments for exploring Mars.

    “Zhurong is powered by four solar panels and carries six scientific instruments for exploring Mars.”

    From Energy system and resource utilization in space: A state-of-the-art review (2024) · cites this paper as [207]

  • Zhurong has ten containers of nundecane stored under two circular windows on the deck, which utilize the temperature difference between day and night to absorb and release energy.

    “Besides, Zhurong has ten containers of nundecane stored under two circular windows on the deck, which utilize the temperature difference between day and night to absorb and release energy. 207”

    From Energy system and resource utilization in space: A state-of-the-art review (2024) · cites this paper as [207]

Citations

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Research works printed but not linked: 5

  1. Daniels F. W., 1949, Trans. Am. Soc. Metals, 41, 419
  2. Griffiths L. B., 1966, J. Phys. Chem. Solids, 27, 25
  3. Hirsch, P. B., Ourmazd, A. and Pirouz, P. Microscopy of Semiconducting Materials. Inst. Phys. Conf. Ser. No. 60. 1981. Edited by: Cullis, A. G. and Joy, D. C. pp.29London: The Institute of Physics.
  4. Knippenberg W. F., 1963, Philips Res. Rep., 18, 161
  5. Popp G., 1964, Commun. Am. Ceram. Soc., 1, 18

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Metadata

Authors
Maeda, K., Suzuki, K., Fujita, S., Ichihara, M., & Hyodo, S.
Affiliations
  • The University of Tokyo (JP)
  • The Institute for Solid State Physics, The University of Tokyo (JP)
ORCID
Venue
Philosophical Magazine A
Publisher
Informa UK Limited
Published
1988-04
Volume
57
Issue
4
Pages
573-592
ISSN
  • 0141-8610 (ISSN-L)
  • 1460-6992
DOI
10.1080/01418618808214408
OpenAlex
W2025516977
Cited by
165
References
28
Citations by year
2026: 1 · 2025: 1 · 2024: 8 · 2023: 2 · 2022: 1 · 2021: 4 · 2020: 2 · 2019: 3 · 2018: 4 · 2017: 3 · 2016: 3 · 2015: 5 · 2014: 2 · 2013: 4 · 2012: 5
FWCI
4.35
Type
journal article
Language
en
Open access
closed
Locations
Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties (publishedVersion)
Topics
  • Physical Sciences › Materials Science › Metals and Alloys › Microstructure and mechanical properties
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
  • Physical Sciences › Materials Science › Ceramics and Composites › Advanced ceramic materials synthesis
Keywords
6H-SiC, basal plane dislocations, dislocation dissociation, Shockley partial dislocations, stacking faults, Peierls potential, dislocation motion, ductile-to-brittle transition, dislocation multiplication, plastic deformation, microhardness, high-temperature deformation

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