Resistance switching in perovskite thin films
Abstract
Recent research on the resistance switching effect in manganite oxide based electric‐pulse‐induced resistance (EPIR) devices is being reviewed. The EPIR effect encompasses the reversible change of resistance of a thin oxide film such as Pr 1–x Cax MnO 3 (PCMO) under the application of short, low voltage pulses. Two groups of EPIR devices have been investigated: one with the PCMO layer sandwiched between a top and a bottom electrode; the other with both electrodes on top of the PCMO thin films, which were grown on insulating substrates. I –V switching characteristics, electric pulse switching hysteresis, as well as the dynamic resistance during nano second switching pulses of the EPIR devices were measured. Temperature studies showed similar activation energies for both high and low resistance states. Resistance profile microanalysis showed resistance switching both in the interface regions of the oxide film near the electrode, as well as in the bulk of PCMO film with the major resistance change from the interface regions. The resistance switching mechanism is discussed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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For memristors, SET and RESET switching speeds have been observed in the single digit nanosecond range by several groups.
“For memristors, switching speeds for the SET operation (ON switching), from the high resistance state (HRS) to the low resistance state (LRS), as well as for the RESET operation (OFF switching), from the LRS to the HRS, have been observed in the single digit nanosecond range by several groups [14][15][16][17].”
From Sub-nanosecond switching of a tantalum oxide memristor (2011) · cites this paper as [14]
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References 7 · Cited by 40
- Authors
- Ignatiev, A., Wu, N. J., Chen, X., Liu, S. Q., Papagianni, C., & Strozier, J.
- Affiliations
- University of Houston (US)
- Corresponding author
- Ignatiev, A.
- Venue
- physica status solidi (b)
- Publisher
- Wiley
- Published
- 2006-07
- Volume
- 243
- Issue
- 9
- Pages
- 2089-2097
- ISSN
- 0370-1972 (ISSN-L)
- 1521-3951
- OpenAlex
- W2145024398
- Cited by
- 40
- References
- 7
- Citations by year
- 2025: 2 · 2021: 3 · 2017: 3 · 2016: 4 · 2015: 2 · 2014: 1 · 2013: 2 · 2012: 2
- FWCI
- 5.06
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- physica status solidi (b) (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Magnetic and transport properties of perovskites and related materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Keywords
- resistive switching, manganites, Pr1-xCaxMnO3, perovskite thin films, current-voltage characteristics, dynamic resistance, interface effects, activation energy, switching mechanism, multilevel memory
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