Sub-nanosecond switching of a tantalum oxide memristor
Open accessAbstract
We report sub-nanosecond switching of a metal-oxide-metal memristor utilizing a broadband 20 GHz experimental setup developed to observe fast switching dynamics. Set and reset operations were successfully performed in the tantalum oxide memristor using pulses with durations of 105 and 120 ps, respectively. Reproducibility of the sub-nanosecond switching was also confirmed as the device switched over consecutive cycles.
AI snapshot
Written from the paper’s full text.
TL;DR
The paper reports sub-nanosecond resistance switching in a tantalum oxide memristor integrated into a broadband 20 GHz coplanar-waveguide test setup. SET and RESET were achieved with 105 ps and 120 ps pulses, respectively, and switching was reproduced over five consecutive cycles.
Key findings
- A 2 μm tantalum oxide memristor switched with a SET pulse of +2.0 V and FWHM = 105 ps, and a RESET pulse of −3.3 V and 120 ps.
- Switching energies were computed as 1.9 pJ for ON switching and 5.8 pJ for OFF switching; capacitive charging energies were 0.18 pJ for ON and 0.45 pJ for OFF.
- Reproducibility was confirmed over five consecutive cycles; the HRS/LRS ratio increased after each switching cycle.
- The observed switching speed was limited by the pulse generator, not by the memristive device or the transmission line structure; the authors suggest faster pulse generators could enable double-digit picosecond switching.
Methods
- A broadband 20 GHz experimental setup was developed with a memristor in series with a fast pulse generator and a single-shot 20 GHz Lecroy oscilloscope, using a tapered coplanar waveguide with 50 Ω transmission lines.
- The device was a metal/insulator/metal stack with Ti (5 nm)/Pt (20 nm) bottom electrode, 7 nm amorphous tantalum pentoxide (a-Ta₂O₅), and Ta (30 nm)/Pt (200 nm) top electrode; fast switching measurements used a 2 μm device.
- Device state changes were confirmed by low-bias current-voltage sweeps up to 0.1 V; memristor voltage and current were extracted using an equivalent circuit model, and switching energies were computed by integrating the V_memristor I_memristor product during the pulse.
Limitations
- The paper states that the observed switching speed was limited by the pulse generator, not by the memristive device or transmission line structure.
- The paper states that the HRS/LRS ratio increased after each switching cycle and that further studies are being conducted to explain this behavior on fast timescales.
- The paper states that applied pulse amplitudes were close to the minimum required; lowering the incident pulse amplitude by 30% changed the SET operation to a higher LRS and prevented RESET in a single pulse.
- Evident from the text: fast switching reproducibility is shown for one device size (2 μm) over five cycles, and the circuit modeling neglects the weak frequency dependence of R_series and ε_reff.
Model-written summary. Check it against the paper before relying on it.
Integrity signals
Registry
Cites
Statistics
Claims the paper makes
0 of 21 cited sources checked · 0 supported · 0 flagged
- Findingown data
The associated energies for ON and OFF switching were 1.9 and 5.8 pJ, respectively.
“The associated energies for ON and OFF switching were computed to be 1.9 and 5.8 pJ, respectively, by integrating the V memristor I memristor product during the pulse.”
Quote in the paperSubstantial claim - Findingown data
A broadband 20 GHz experimental setup with memristors integrated into a waveguide structure was developed to study fast switching dynamics.
“In order to study the fast switching dynamics in memristive devices, we developed a broadband 20 GHz experimental setup with memristors integrated into a waveguide structure.”
Quote in the paperSubstantial claim - Findingown data
Resistance switching was achieved using a SET pulse with duration of 105 ps and a RESET pulse with duration of 120 ps.
“Set and reset operations were successfully performed in the tantalum oxide memristor using pulses with durations of 105 and 120 ps, respectively.”
- Also stated in: § 1. Introduction · boosted
“Resistance switching was successfully achieved using a SET pulse with duration of 105 ps and a RESET pulse with duration of 120 ps, demonstrating the effectiveness of the platform developed here and the technological promise of memristors.”
Quote in the paperSubstantial claim - Also stated in: § 1. Introduction · boosted
- Findingown data
The designed and fabricated CPW showed weak to no dispersion as required for pulse integrity.
“indicating weak to no dispersion in the designed and fabricated CPW as required for pulse integrity.”
Quote in the paperSubstantial claim - Findingown data
Measurements in a 210 μm-long straight section of the CPW with dimensions w = w_pad and s = s_pad resulted in a transmitted phase shift of φ = 13° at 20 GHz.
“Measurements performed in a 210 μm-long straight section of the CPW with dimensions w = w pad and s = s pad resulted in a transmitted phase shift of φ = 13 • at 20 GHz.”
Quote in the paperSubstantial claim
- Findingnone given
The HRS/LRS ratio of the device increased after each switching cycle.
“The HRS/LRS ratio of the device is seen to increase after each switching cycle, and further studies are being conducted to explain this observed behavior on these fast timescales.”
Quote in the paperNot a substantial claim - Findingown data
The SET operation used an incident pulse with amplitude +2.0 V and full width at half maximum 105 ps.
“Figure 3(a) shows the measured sample current I sample through a 2 μm memristor as a result of an applied incident pulse V inc for the SET operation, a pulse with amplitude of +2.0 V and full width at half maximum FWHM = 105 ps.”
Quote in the paperSubstantial claim - Findingown data
The RESET operation used an incident pulse of -3.3 V and 120 ps.
“For the RESET operation, the measured I sample from an applied pulse V inc of -3.3 V/120 ps is shown in figure 3(b).”
Quote in the paperSubstantial claim - Study design and conductown data
Excellent agreement was found between the experimental frequency response and the respective modeling for virgin memristors integrated into a CPW.
“Excellent agreement was found between the experimental frequency response and the respective modeling.”
Quote in the paperSubstantial claim- The authors state this as an assumption: The weak frequency dependence of R_series and ε_reff can be neglected in the circuit modeling.
- Interpretationreasoning
For an as-prepared memristor, the measured sample current is essentially the capacitive current through C_memristor because the resistance is on the order of megaohms.
“As the resistance of an asprepared memristor is on the order of megaohms, the measured I sample is essentially the capacitive current I C through C memristor .”
Quote in the paperSubstantial claim - Study design and conductown data
The CPW test structure preserved the shape of the incident pulse essentially, despite attenuation by ohmic loss.
“Although V trans is attenuated by the ohmic loss associated with the fabricated CPW, the shape of the incident pulse is essentially preserved as required for the intended experiment.”
Quote in the paperSubstantial claim - Interpretationcitation
As device size shrinks from 2 μm into the nanometer range, both switching and charging energies are expected to decrease significantly.
“As the device size shrinks from 2 μm into the nanometer range, both the switching and charging energies are expected to decrease significantly as demonstrated in [28].”
Quote in the paperNot a substantial claim0 of 1 sources checked- cites [28] Miao F, 2011, Adv. Mater.
Not checked in the free run.
- Interpretationnone given
The measured impedance mismatch and CPW transmission loss is caused by ohmic loss originating from the 200 nm metallic layer, which is much thinner than the skin depth δ = 1.1 μm for Pt at 20 GHz.
“The measured impedance mismatch and CPW transmission loss is caused by ohmic loss originating from the 200 nm metallic layer, which is much thinner than the skin depth δ = 1.1 μm for Pt at 20 GHz.”
Quote in the paperNot a substantial claim - Study design and conductown data
Good agreement between design and measurement was obtained assuming an effective conductivity of σ_design = 7.6 × 10^6 S/m for the metallic layer in the simulated structure.
“Good agreement between design and measurement was obtained assuming an effective conductivity of σ design = 7.6 × 10 6 S • m -1 for the metallic layer in the simulated structure.”
Quote in the paperNot a substantial claim - Study design and conductown data
From the time domain perspective, the measured time response of a virgin memristor integrated into a CPW is in good agreement with the calculated response from LTspice simulations of the derived equivalent circuit.
“From the time domain perspective, figure B.1(e) shows good agreement between the measured time response V trans = Z 0 I sample and the calculated V trans obtained from LTspice simulations of the derived equivalent circuit shown in figure 2(a).”
Quote in the paperNot a substantial claim- The authors state this as an assumption: The weak frequency dependence of R_series and ε_reff can be neglected in the circuit modeling.
- Study design and conductown data
The time response of the derived equivalent circuit for the CPW test structure is in good agreement with the experimental transmitted voltage.
“The calculated V trans is shown as a red line in figure 1(c) and is in good agreement with the experimental result.”
Quote in the paperNot a substantial claim- The authors state this as an assumption: The weak frequency dependence of R_series and ε_reff can be neglected in the circuit modeling.
- Study design and conductown data
The measured frequency response of virgin memristors integrated into a CPW can be properly modeled using equations (A.1) and (A.2).
“The measured frequency response for this configuration can be properly modeled using equations (A.1) and (A.”
Quote in the paperNot a substantial claim- The authors state this as an assumption: The weak frequency dependence of R_series and ε_reff can be neglected in the circuit modeling.
- Study design and conductown data
The circuit modeling was verified by time and frequency domain experiments carried out for virgin samples with different w_memristor sizes.
“This circuit modeling was verified by time and frequency domain experiments carried out for virgin samples with different w memristor sizes as reported in appendix B.”
Quote in the paperNot a substantial claim- The authors state this as an assumption: The weak frequency dependence of R_series and ε_reff can be neglected in the circuit modeling.
- May combine two claims. 18
- Classified as probably not a substantial claim. 8
May combine two claims.
Findingown dataThe effective relative permittivity of the CPW was determined to be εreff = 6.6, matching the design value at the same frequency.
“From these data, an effective relative permittivity seen by the quasi-transverse electromagnetic mode coupled to the CPW was calculated to be ε reff = 6.6, matching the design value at the same frequency.”
Quote in the paperSubstantial claimMay combine two claims.
Findingown dataLowering the amplitude of the applied incident pulses by 30% caused the SET operation to change the memristor to a higher LRS (twice as much as the one indicated in figure 4(a)), while the RESET operation could not be performed in a single pulse.
“For example by lowering the amplitude of the applied incident pulses by 30%, the SET operation changed the memristor to a higher LRS, twice as much as the one indicated in figure 4(a), while the RESET operation could not be performed in a single pulse.”
Quote in the paperNot a substantial claimProbably not a substantial claim: may not pass S3 (load-bearing).
Findingnone givenThe effective conductivity of the metallic layer used in simulation (7.6 × 10^6 S/m) is comparable to the ideal conductivity of Pt (9.5 × 10^6 S/m at 20 °C).
“This conductivity value is comparable to the ideal one for Pt, σ Pt = 9.5 × 10 6 S • m -1 at 20 • C.”
Quote in the paperNot a substantial claimMay combine two claims.
Findingown dataFor a memristor with size w_memristor = 2 μm and s_memristor = 2 μm, the equivalent circuit parameters were R_series = 67 Ω and C_memristor = 0.12 pF.
“For a memristor with size w memristor = 2 μm and s memristor = 2 μm, the equivalent circuit parameters were found to be R series = 67 and C memristor = 0.12 pF.”
Quote in the paperSubstantial claimMay combine two claims.
Findingown dataThe voltage amplitudes of the applied incident pulses are close to the minimum values required to set the memristor to the measured LRS and to reset the device.
“The voltage amplitudes of the applied incident pulses are close to the minimum values required to set the memristor resistance state to the measured LRS and to reset the device.”
Quote in the paperNot a substantial claimMay combine two claims.
FindingcitationThe relative permittivity of the tantalum oxide film was estimated to be εr film = 30, in agreement with literature data for tantalum oxide.
“The relative permittivity of the film was estimated to be ε r film = 30, which is in agreement with data available in the literature for tantalum oxide [26].”
- Also stated in: § Additional information · plain
“The relative permittivity that provided the best fit to the experimental data was found to be ε r film = 30, in agreement with the tantalum oxide data provided in the literature [26].”
Quote in the paperNot a substantial claim0 of 1 sources checked- cites [26] source
Not checked in the free run.
- Also stated in: § Additional information · plain
May combine two claims.
Findingown dataThe sub-nanosecond switching was reproducible over consecutive cycles; the device switched over five consecutive cycles.
“Reproducibility of the sub-nanosecond switching was also confirmed as the device switched over consecutive cycles.”
- Also stated in: § 4. High speed memristor switching and discussion · plain
“Reproducibility of the observed fast resistance switching was also verified as the device successfully switched over five consecutive cycles as shown in figure 4.”
Quote in the paperSubstantial claim- Also stated in: § 4. High speed memristor switching and discussion · plain
May combine two claims.
Findingown dataThe energy required to charge C_memristor was 0.18 pJ for ON switching and 0.45 pJ for OFF switching.
“The energy required to charge the capacitance C memristor was 0.18 pJ for ON switching and 0.45 pJ for OFF switching.”
Quote in the paperNot a substantial claimMay combine two claims.
Findingown dataAfter each SET and RESET operation, the change in device state was confirmed by a low bias current-voltage sweep up to 0.1 V, demonstrating sub-nanosecond switching.
“After each SET and RESET operation, the change in the device state was confirmed by a low bias current-voltage sweep up to 0.1 V using an Agilent B1500 semiconductor parameter analyzer, demonstrating the sub-nanosecond switching of the memristor.”
Quote in the paperSubstantial claimMay combine two claims.
Findingown dataThe observed CPW transmission loss has a weak frequency dependence, which is important for the integrity of a propagating pulse.
“The observed CPW transmission loss has a weak frequency dependence, which is important for the integrity of a propagating pulse.”
Quote in the paperNot a substantial claimClassified as probably not a substantial claim. May combine two claims.
PremisecitationThin-film metal/insulator/metal devices exhibit reversible nonvolatile resistance switching with current-voltage behavior characterized as a memristor.
“Thin-film electronic devices in a metal/insulator/metal structure have shown reversible nonvolatile resistance switching [1] with dynamical current-voltage behavior that can be characterized as a memristor [2,3].”
Quote in the paperSubstantial claim0 of 3 sources checkedMay combine two claims.
PremisecitationThe unpatterned tantalum oxide film was sputter-deposited from a tantala target and consisted of amorphous tantalum pentoxide (a-Ta2O5) with a high concentration of oxygen vacancies.
“The unpatterned tantalum oxide film was sputter-deposited from a tantala target and consisted of amorphous tantalum pentoxide (a-Ta 2 O 5 ) with a high concentration of oxygen vacancies [25].”
Quote in the paperSubstantial claim0 of 1 sources checked- cites [25] source
Not checked in the free run.
Classified as probably not a substantial claim.
PremisecitationVolatile DRAM and SRAM have write speeds of the order of hundreds of picoseconds.
“Volatile memories such as dynamic random access memory (DRAM) and static random access memory (SRAM) have write speeds of the order of hundreds of picoseconds [13].”
Quote in the paperSubstantial claim0 of 1 sources checked- cites [13] Garner J H M, 2010, Workshop & ERD/ERM Working Group Mtg
Not checked in the free run.
May combine two claims.
Study design and conductown dataThe measured frequency response of the CPW test structure up to 20 GHz is in good agreement with both the simulated full-wave frequency response and the frequency response obtained from the derived equivalent circuit.
“As shown in appendix A, the measured frequency response is in good agreement with both the simulated full-wave frequency response and the frequency response obtained from the derived equivalent circuit.”
Quote in the paperNot a substantial claim- The authors state this as an assumption: The weak frequency dependence of R_series and ε_reff can be neglected in the circuit modeling.
May combine two claims.
Study design and conductown dataLTspice simulation of the derived equivalent circuit using the measured incident voltage reproduced the measured current of a virgin 2 μm memristor, validating the circuit model and parameter values.
“LTspice simulation of the derived equivalent circuit using the measured incident voltage V inc as a driver successfully reproduced the measured current as shown in figure 2(b).This validates the circuit model and parameter values, enabling an accurate extraction of the memristor parameters and their related dynamics [27].”
Quote in the paperSubstantial claim0 of 1 sources checked- cites [27] Strachan J P Torrezan A C Medeiros-Ribeiro G Williams R S, 2011
Not checked in the free run.
- The authors state this as an assumption: The weak frequency dependence of R_series and ε_reff can be neglected in the circuit modeling.
Probably not a substantial claim: may not pass S3 (load-bearing). May combine two claims.
PremisecitationMemristors are promising candidates for future high-density nonvolatile memories because of demonstrated high endurance, electroforming-free operation, CMOS compatibility, and integrability in high-density cross-bar arrays.
“Memristors are promising candidates for future high-density nonvolatile memories given their demonstrated desirable properties such as high endurance [4,5], electroforming-free operation [4], compatibility with complementary metal-oxide-semiconductor (CMOS) processes [6], and the ability to be integrated in high-density cross-bar arrays [7,8].”
Quote in the paperNot a substantial claim0 of 3 sources checkedMay combine two claims.
Interpretationnone givenThe observed switching speed in this experiment was limited by the pulse generator and not by the memristive device itself nor by the transmission line structure.
“The observed switching speed in this experiment was limited by the pulse generator and not by the memristive device itself nor by the transmission line structure.”
Quote in the paperSubstantial claimProbably not a substantial claim: may not pass S3 (load-bearing). May combine two claims.
PremisecitationMemristors can be used to implement digital logic, synapses in neural applications, and hybrid circuits.
“They can also be used to implement digital logic [9], synapses in neural applications [10,11], and hybrid circuits [6,12].”
Quote in the paperNot a substantial claim0 of 5 sources checkedProbably not a substantial claim: may not pass S3 (load-bearing).
PremisecitationQualitative measurements showing device switching within 300 ps have been reported.
“Qualitative measurements showing device switching within 300 ps have also been reported [18].”
Quote in the paperNot a substantial claim0 of 1 sources checked- cites [18] Lee H Y, 2010, IEEE Int. Electron Devices Mtg
Not checked in the free run.
Classified as probably not a substantial claim. May combine two claims.
PremisecitationMainstream nonvolatile Flash exhibits write times of the order of a microsecond and erase times of the order of hundreds of microseconds.
“Mainstream nonvolatile memory technologies such as Flash exhibit write times of the order of a microsecond with erase times of the order of hundreds of microseconds [13].”
Quote in the paperSubstantial claim0 of 1 sources checked- cites [13] Garner J H M, 2010, Workshop & ERD/ERM Working Group Mtg
Not checked in the free run.
Probably not a substantial claim: may not pass S3 (load-bearing).
PremisecitationFor memristors, SET and RESET switching speeds have been observed in the single digit nanosecond range by several groups.
“For memristors, switching speeds for the SET operation (ON switching), from the high resistance state (HRS) to the low resistance state (LRS), as well as for the RESET operation (OFF switching), from the LRS to the HRS, have been observed in the single digit nanosecond range by several groups [14][15][16][17].”
Quote in the paperNot a substantial claim0 of 3 sources checkedMay combine two claims.
Interpretationown dataThe measured switching speed of this nonvolatile memory element is comparable to or faster than mainstream volatile memories such as DRAM and SRAM, and four orders of magnitude faster than mainstream nonvolatile Flash.
“The measured switching speed of this nonvolatile memory element is comparable to or faster than mainstream volatile memories such as DRAM and SRAM, and four orders of magnitude faster than mainstream nonvolatile Flash.”
Quote in the paperSubstantial claim
The authors state this as an assumption.
The weak frequency dependence of R_series and ε_reff can be neglected in the circuit modeling.
“For simplicity, the weak frequency dependence of R series and ε reff was not considered in the modeling.”
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- Authors
- Torrezan, A. C., Strachan, J. P., Medeiros-Ribeiro, G., & Williams, R. S.
- Affiliations
- Hewlett-Packard (United States) (US)
- Venue
- Nanotechnology
- Publisher
- IOP Publishing
- Published
- 2011-11-09
- Volume
- 22
- Issue
- 48
- Pages
- 485203
- ISSN
- 0957-4484 (ISSN-L)
- 1361-6528
- OpenAlex
- W2149380925
- Semantic Scholar
- 080d69521ceed1c1e283eaa1f3ad1aae412ed2e8
- Cited by
- 701
- References
- 21
- Citations by year
- 2026: 15 · 2025: 36 · 2024: 28 · 2023: 47 · 2022: 44 · 2021: 58 · 2020: 65 · 2019: 42 · 2018: 60 · 2017: 65 · 2016: 66 · 2015: 61 · 2014: 39 · 2013: 50 · 2012: 23
- FWCI
- 25.32
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Locations
- Nanotechnology (publishedVersion)
- PubMed (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
- Keywords
- memristors, tantalum oxide, subnanosecond switching, pulse duration, reproducibility
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Claims read by deepseek-v4.1-flash under definition version 3 (extract-v3) on 2026-10-09.
Classified by jev-1.13-20260917 (gold-guideline-v0.2) on 2026-10-09.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
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