The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
Coupled Ionic and Electronic Transport Model of Thin‐Film Semiconductor Memristive Behavior
Abstract
The memristor, the fourth passive circuit element, was predicted theoretically nearly 40 years ago, but we just recently demonstrated both an intentional material system and an analytical model that exhibited the properties of such a device. Here we provide a more physical model based on numerical solutions of coupled drift‐diffusion equations for electrons and ions with appropriate boundary conditions. We simulate the dynamics of a two‐terminal memristive device based on a semiconductor thin film with mobile dopants that are partially compensated by a small amount of immobile acceptors. We examine the mobile ion distributions, zero‐bias potentials, and current–voltage characteristics of the model for both steady‐state bias conditions and for dynamical switching to obtain physical insight into the transport processes responsible for memristive behavior in semiconductor films.
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Cites
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,828
Self-citationMemristor—The Missing Circuit Element
Chua, L. (1971) · IEEE Transactions on Circuit Theory · doi:10.1109/tct.1971.1083337 · Cited by 10,268
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Memristive devices and systems
Chua, L. O., & Kang, S. M. (1976) · Proceedings of the IEEE · doi:10.1109/proc.1976.10092 · Cited by 2,604
Cited by
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Memory effects in complex materials and nanoscale systems
Pershin, Y. V., & Di Ventra, M. (2011) · Advances In Physics · doi:10.1080/00018732.2010.544961 · Cited by 823
Practical Approach to Programmable Analog Circuits With Memristors
Pershin, Y. V., & Di Ventra, M. (2010) · IEEE Transactions on Circuits and Systems I: Regular Papers · doi:10.1109/tcsi.2009.2038539 · Cited by 639
Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor
Miao, F., Strachan, J. P., Yang, J. J., Zhang, M., Goldfarb, I., Torrezan, A. C., Eschbach, P., Kelley, R. D., Medeiros‐Ribeiro, G., & Williams, R. S. (2011) · Advanced Materials · doi:10.1002/adma.201103379 · Cited by 444
Self-citationSynaptic behaviors and modeling of a metal oxide memristive device
Chang, T., Jo, S.-H., Kim, K.-H., Sheridan, P., Gaba, S., & Lu, W. (2011) · Applied Physics A · doi:10.1007/s00339-011-6296-1 · Cited by 432
Metadata
- Authors
- Strukov, D. B., Borghetti, J. L., & Williams, R. S.
- Venue
- Small
- Publisher
- Wiley
- Published
- 2009-04-22
- Volume
- 5
- Issue
- 9
- Pages
- 1058-1063
- ISSN
- 1613-6810 (ISSN-L)
- 1613-6829
- OpenAlex
- W2109987134
- Cited by
- 270
- References
- 4
- FWCI
- 24.29
- Type
- journal article
- Language
- en
- Open access
- closed
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