The DOI matches its Crossref record; 56 of the 56 references it cites were found in a registry or an index.
Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor
Abstract
By employing a precise method for locating and directly imaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta(2) O(5) is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,828
Self-citationMemristor—The Missing Circuit Element
Chua, L. (1971) · IEEE Transactions on Circuit Theory · doi:10.1109/tct.1971.1083337 · Cited by 10,268
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
Jo, S. H., Chang, T., Ebong, I., Bhadviya, B. B., Mazumder, P., & Lu, W. (2010) · Nano Letters · doi:10.1021/nl904092h · Cited by 4,174
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
Parkin, S. S. P., Kaiser, C., Panchula, A., Rice, P. M., Hughes, B., Samant, M., & Yang, S.-H. (2004) · Nature Materials · doi:10.1038/nmat1256 · Cited by 3,320
Memristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Self-citationResistive switching in transition metal oxides
Sawa, A. (2008) · Materials Today · doi:10.1016/s1369-7021(08)70119-6 · Cited by 2,948
Memristive devices and systems
Chua, L. O., & Kang, S. M. (1976) · Proceedings of the IEEE · doi:10.1109/proc.1976.10092 · Cited by 2,604
Lee, M.-J., Lee, C. B., Lee, D., Lee, S. R., Chang, M., Hur, J. H., Kim, Y.-B., Kim, C.-J., Seo, D. H., Seo, S., et al. (2011) · Nature Materials · doi:10.1038/nmat3070 · Cited by 2,228
Cited by
Memristive devices for computing
Yang, J. J., Strukov, D. B., & Stewart, D. R. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.240 · Cited by 3,885
Self-citationResistive switching materials for information processing
Wang, Z., Wu, H., Burr, G. W., Hwang, C. S., Wang, K. L., Xia, Q., & Yang, J. J. (2020) · Nature Reviews Materials · doi:10.1038/s41578-019-0159-3 · Cited by 1,214
Self-citationA comprehensive review on emerging artificial neuromorphic devices
Zhu, J., Zhang, T., Yang, Y., & Huang, R. (2020) · Applied Physics Reviews · doi:10.1063/1.5118217 · Cited by 758
Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics
Huh, W., Lee, D., & Lee, C. (2020) · Advanced Materials · doi:10.1002/adma.202002092 · Cited by 586
Thousands of conductance levels in memristors integrated on CMOS
(2023) · doi:10.1038/s41586-023-05759-5 · Cited by 503
Metadata
- Authors
- Miao, F., Strachan, J. P., Yang, J. J., Zhang, M., Goldfarb, I., Torrezan, A. C., Eschbach, P., Kelley, R. D., Medeiros‐Ribeiro, G., & Williams, R. S.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2011-11-08
- Volume
- 23
- Issue
- 47
- Pages
- 5633-5640
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2069418413
- Cited by
- 444
- References
- 56
- FWCI
- 20.05
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor. https://app.cochat.ai/papers/10.1002/adma.201103379
- The paper
- Miao, F., Strachan, J. P., Yang, J. J., Zhang, M., Goldfarb, I., Torrezan, A. C., Eschbach, P., Kelley, R. D., Medeiros‐Ribeiro, G., & Williams, R. S. (2011). Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor. Advanced Materials. https://doi.org/10.1002/adma.201103379
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
