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Cited by 1,741

The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.

Large‐Area Vapor‐Phase Growth and Characterization of MoS2 Atomic Layers on a SiO2 Substrate

Zhan, Yongjie, Liu, Zheng, Najmaei, Sina, Ajayan, Pulickel M., Lou, Jun·2012·Small

Abstract

Atomic-layered MoS(2) is synthesized directly on SiO(2) substrates by a scalable chemical vapor deposition method. The large-scale synthesis of an atomic-layered semiconductor directly on a dielectric layer paves the way for many facile device fabrication possibilities, expanding the important family of useful mono- or few-layer materials that possess exceptional properties, such as graphene and hexagonal boron nitride (h-BN).

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Crossref · 10.1002/smll.201102654

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Metadata

Authors
Zhan, Y., Liu, Z., Najmaei, S., Ajayan, P. M., & Lou, J.
Venue
Small
Publisher
Wiley
Published
2012-02-15
Volume
8
Issue
7
Pages
966-971
ISSN
  • 1613-6810 (ISSN-L)
  • 1613-6829
OpenAlex
W2157876253
Cited by
1,741
References
2
FWCI
68.92
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Large‐Area Vapor‐Phase Growth and Characterization of MoS2 Atomic Layers on a SiO2 Substrate. https://app.cochat.ai/papers/10.1002/smll.201102654
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Zhan, Y., Liu, Z., Najmaei, S., Ajayan, P. M., & Lou, J. (2012). Large‐Area Vapor‐Phase Growth and Characterization of MoS2 Atomic Layers on a SiO2 Substrate. Small. https://doi.org/10.1002/smll.201102654

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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