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Layer Thinning and Etching of Mechanically Exfoliated MoS2 Nanosheets by Thermal Annealing in Air

Wu, Jumiati, Li, Hai, Yin, Zongyou, Li, Hong, Liu, Juqing, Cao, Xiehong, Zhang, Qing, Zhang, Hua·2013·Small

Abstract

A simple thermal annealing method for layer thinning and etching of mechanically exfoliated MoS 2 nanosheets in air is reported. Using this method, single‐layer (1L) MoS 2 nanosheets are achieved after the thinning of MoS 2 nanosheets from double‐layer (2L) to quadri‐layer (4L) at 330 °C. The as‐prepared 1L MoS 2 nanosheet shows comparable optical and electrical properties with the mechanically exfoliated, pristine one. In addition, for the first time, the MoS 2 mesh with high‐density of triangular pits is also fabricated at 330 °C, which might arise from the anisotropic etching of the active MoS 2 edge sites. As a result of thermal annealing in air, the thinning of MoS 2 nanosheet is possible due to its oxidation to form MoO 3. Importantly, the MoO 3 fragments on the top of thinned MoS 2 layer induces the hole injection, resulting in the p‐type channel in fabricated field‐effect transistors.

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Metadata

Authors
Wu, J., Li, H., Yin, Z., Li, H., Liu, J., Cao, X., Zhang, Q., & Zhang, H.
Venue
Small
Publisher
Wiley
Published
2013-08-28
Volume
9
Issue
19
Pages
3314-3319
ISSN
  • 1613-6810 (ISSN-L)
  • 1613-6829
OpenAlex
W2099603260
Cited by
271
References
3
FWCI
8.73
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Layer Thinning and Etching of Mechanically Exfoliated MoS2 Nanosheets by Thermal Annealing in Air. https://app.cochat.ai/papers/10.1002/smll.201301542
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Wu, J., Li, H., Yin, Z., Li, H., Liu, J., Cao, X., Zhang, Q., & Zhang, H. (2013). Layer Thinning and Etching of Mechanically Exfoliated MoS2 Nanosheets by Thermal Annealing in Air. Small. https://doi.org/10.1002/smll.201301542

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